Number: DB-027
September 2009 Release, Revision D
Page 1
TAK CHEONG ®
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
DEVICE MARKING DESIGNATION:
Line 1 & 2= Device Name
Line 3 = Date code
Line 4 = Polarity
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol Parameter TCMBR10100CT TCMBR10150CT TCMBR10200CT Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage 100 150 200 V
IF(AV) Average Rectified Forward Current
Per Leg
Per Package
5
10 A
IFSM Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load 80 A
TSTG Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperature +175 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol Parameter Value
Units
RθJC Maximum Thermal Resistance,
Junction-to-Case 1.5 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg) TA = 25°C unless otherwise noted
TCMBR10100CT TCMBR10150CT TCMBR10200CT
Symbol Parameter Test Condition
(Note 1) Min Max Min Max Min Max
Units
IR Reverse Current @ rated VR --- 100 --- 100 --- 100 μA
VF Forward Voltage IF = 5A
IF = 10A --- 0.850
0.900 --- 0.900
0.950 --- 0.950
1 V
Note/s:
1. Tested under pulse condition of 300μS.
TCMBR10100CT through TCMBR10200CT
123TO-220AB
1. Anode 2. Cathode 3. Anode
POLARITY CONFIGURATION