MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
2
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
ThinPAK5x6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,
TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 0.36 Ω
Qg,typ 22 nC
ID,pulse 30 A
Eoss@400V 3 µJ
Body diode di/dt 500 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPL60R360P6S ThinPAK 5x6 SMD 60P6360 see Appendix A
3
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
11.3
7.1 ATC = 25°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 30 A TC=25°C
Avalanche energy, single pulse EAS - - 247 mJ ID =2.1A; VDD = 50V
Avalanche energy, repetitive EAR - - 0.37 mJ ID =2.1A; VDD = 50V
Avalanche current, repetitive IAR - - 2.1 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...480V
Gate source voltage VGS -20
-30
-
-
20
30 Vstatic;
AC (f>1 Hz)
Power dissipation (non FullPAK) Ptot - - 89.3 W TC=25°C
Operating and storage temperature Tj,Tstg -40 - 150 °C -
Continuous diode forward current IS- - 9.8 A TC=25°C
Diode pulse current2) IS,pulse - - 29.7 A TC = 25°C
Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed3) dif/dt - - 500 A/µsVDS=0...400V,ISD<=IS,Tj=25°C
3Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.4 °C/W -
Thermal resistance, junction - ambient RthJA - 35 62 °C/W
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C reflow MSL1
1) Limited by Tj max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
5
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.50 4 4.50 V VDS=VGS,ID=0.37mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.32
0.84
0.36
-ΩVGS=10V,ID=4.5A,Tj=25°C
VGS=10V,ID=4.5A,Tj=150°C
Gate resistance RG- 6.7 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1010 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 47 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1) Co(er) - 38 - pF VGS=0V,VDS=0...480V
Effective output capacitance, time
related2) Co(tr) - 155 - pF ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=3.4Ω
Rise time tr- 7 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=3.4Ω
Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=3.4Ω
Fall time tf- 7 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=3.4Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 6 - nC VDD=480V,ID=5.6A,VGS=0to10V
Gate to drain charge Qgd - 8 - nC VDD=480V,ID=5.6A,VGS=0to10V
Gate charge total Qg- 22 - nC VDD=480V,ID=5.6A,VGS=0to10V
Gate plateau voltage Vplateau - 6.1 - V VDD=480V,ID=5.6A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
6
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=5.6A,Tf=25°C
Reverse recovery time trr - 257 - ns VR=400V,IF=5.6A,diF/dt=100A/µs
Reverse recovery charge Qrr - 3 - µC VR=400V,IF=5.6A,diF/dt=100A/µs
Peak reverse recovery current Irrm - 18 - A VR=400V,IF=5.6A,diF/dt=100A/µs
7
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
90
100
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
8
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
30
35
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
20 V
5.5 V 6 V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
98% typ
RDS(on)=f(Tj);ID=5.6A;VGS=10V
9
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
5
10
15
20
25
30
35
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25
0
1
2
3
4
5
6
7
8
9
10
120 V
480 V
VGS=f(Qgate);ID=5.6Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
50
100
150
200
250
300
EAS=f(Tj);ID=2.1A;VDD=50V
10
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-75 -50 -25 0 25 50 75 100 125 150 175
520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Eoss=f(VDS)
11
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
12
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
7PackageOutlines
E2
K1
K2
e
MILLIMETERS
A
DIM MIN MAX INCHES
MIN MAX
1
SCALE
Z8B00172997
REVISION
ISSUE DATE
EUROPEAN PROJECTION
01
17-04-2014
0
2mm
0
1
DOCUMENT NO.
b1
c
D
D1
E
E1
N
L
0.90 1.10 0.035 0.043
0.00
0.10
4.90
4.11
5.90
2.60
0.45
0.05
0.30
5.10
4.31
6.10
2.80
0.65
0.000
0.004
0.193
0.162
0.232
0.102
0.018
0.002
0.012
0.201
0.170
0.240
0.110
0.026
0.30
8
0.50
8
0.012 0.020
1.27 (BSC) 0.05 (BSC)
b 0.30 0.50 0.012 0.020
1.80 2.00 0.071 0.079
0.20 0.40 0.008 0.016
L1 0.45 0.65 0.018 0.026
Figure1OutlineThinPAK5x6SMD,dimensionsinmm/inches
13
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
8AppendixA
Table11RelatedLinks
•IFXCoolMOSWebpage:www.infieon.com
•IFXDesigntools:www.infineon.com
14
600VCoolMOS™P6PowerTransistor
IPL60R360P6S
Rev.2.0,2014-07-08Final Data Sheet
RevisionHistory
IPL60R360P6S
Revision:2014-07-08,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-07-08 Release of final version
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.