ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM = 8500
V
ITAVM = 1200
A
ITRMS = 1880
A
ITSM = 35000
A
V
T0 =1.25
V
r
T= 0.480 mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 12N8500
D
oc
. N
o
.
5S
YA1
0
44-
0
2
Sep
.
0
1
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blockin
g
Part Number 5STP 12N8500 5STP 12N8200 5STP 12N7800 Conditions
VDSM VRSM 8500 V 8200 V 7800 V f = 5 Hz, tp = 10ms
VDRM VRRM 8000 V 7700 V 7300 V f = 50 Hz, tp = 10ms
VRSM1 9000 V 8600 V 8200 V tp = 5ms, single pulse
IDSM ≤ 1000 mA VDSM
IRSM ≤ 400 mA VRSM
Tj = 90°C
dV/dtcrit 2000 V/µs Exp. to 0.67 x VDRM, Tj = 90°C
Mechanical data
FMMounting force nom. 90 kN
min. 81 kN
max. 108 kN
aAcceleration
Device unclamped
Device clamped
50
100
m/s2
m/s2
mWeight 2.9kg
DSSurface creepage distance 56 mm
DaAir strike distance 22 mm
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01 page 2 of 6
On-state
ITAVM Max. average on-state current 1200 A Half sine wave, TC = 70°C
ITRMS Max. RMS on-state current 1880 A
ITSM Max. peak non-repetitive 35000 A tp
=
10 ms Tj = 90°C
surge current 38000 A tp
=
8.3 ms After surge:
I2t Limiting load integral 6125 kA2stp
=
10 ms VD = VR = 0V
5992 kA2stp
=
8.3 ms
VTOn-state voltage 2.00 V IT
=
1500 A
VT0 Threshold voltage 1.25 V IT
=
700 - 2100 A Tj = 90°C
rTSlope resistance 0.480 mΩ
IHHolding current 75-150 mA T
j
=
25°C
50-125 mA T
j
=
90°C
ILLatching current 150-
600
mA T
j
=
25°C
150-
800
mA T
j
=
90°C
Switching
di/dtcrit Critical rate of rise of on-state 250 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 90°C
current 500 A/µs ITRM = 2000 A60 sec.
f = 50Hz IFG = 2 A, tr = 0.5 µs
tdDelay time ≤3.0 µs VD = 0.4⋅VDRM IFG = 2 A, tr = 0.5 µs
tqTurn-off time ≤600 µs VD ≤ 0.67⋅VDRM ITRM = 2000 A, Tj = 90°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = -1 A/µs
Qrr Recovery charge min 2800 µAs
max 3400 µAs
Triggering
VGT Gate trigger voltage 2.6 V Tj = 25°
IGT Gate trigger current 400 mA Tj = 25°
VGD Gate non-trigger voltage 0.3 V VD =0.4 x VDRM
IGD Gate non-trigger current 10 mA VD = 0.4 x VDRM
VFGM Peak forward gate voltage 12 V
IFGM Peak forward gate current 10 A
VRGM Peak reverse gate voltage 10 V
PGGate power loss 3 W
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01 page 3 of 6
Thermal
Tjmax Max. operating junction temperature
range
90 °C
Tstg Storage temperature range -40…140 °C
RthJC Thermal resistance 11.4 K/kW Anode side cooled
junction to case 11.4 K/kW Cathode side cooled
5.7 K/kW Double side cooled
RthCH Thermal resistance case to 2 K/kW Single side cooled
heat sink 1 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1234
Ri(K/kW) 3.4 1.26 0.68 0.35
τi(s) 0.8685 0.1572 0.0219 0.0078
0.001 0.010 0.100 1.000 10.00
t[s]
0
1
2
3
4
5
6
Z
thJC
[K
kW]
TN1
180° sine: add 0.5 K/kW
180° rectangular: add 0.5 K/kW
120° rectangular: add 0.8 K/kW
60° rectangular: add 1.5 K/kW
F
m
= 81..108 kN
Double-side cooling
Fig. 1 Transient thermal impedance junction to case.
On-state characteristic model:
ITDiTCiTBAVT ⋅++⋅+⋅+= )1ln(
Valid for iT = 200 – 4000 A
ABCD
1.97 -0.00018 -0.3 0.062
Fig. 2 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 3 On-state characteristics.
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01 page 4 of 6
0 200 400 600 800 1000 1200 1400 1600 180
0
I
T
A
V
(
A
)
70
75
80
85
90
T
case
(
°
C
)
DC
180° rectangular
180° sine
120° rectangular
5STP
12N8500
Double-sided cooling
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Sep. 01 page 5 of 6
Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss.
10
2
40
50
60
70
80
90
200
300
(
A
)
30
-di
T
/
dt (
A
/
µs)
11023456789 20
30
I
TRM
=
2000
A
T
j
=
T
jmax
5STP
12N8500
400
I
RM
max
min
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
60 70 80 90
T
j
(°C)
0.6
0.7
0.8
0.9
1.0
5
S
TP 12N
8
5
0
0
f
(
T
)
1j
Fig. 12 tq/tq1 = f1(Tj) Fig. 13 tq/tq1 = f2(-diT/dt) Fig. 14 tq/tq1 = f3(dv/dt)
tq = tq1 • f1(Tj) • f2(-diT/dt) • f3(dv/dt) tq1 :at normalized values (see page 2)
tq : at varying conditions
5STP 12N8500
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1044-02 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Turn-on and Turn-off losses
Fig. 15 Won = f(IT, tP), Tj = 125°C.
Half sinusoidal waves.
Fig. 16 Won = f(IT, di/dt), Tj = 125°C.
Rectangular waves.
01234
V
0
(kV)
0
2
4
6
8
10
W
off
(
Ws
/
pulse
)
I
TRM
=
6500
A
I
TRM
=
4500
A
I
TRM
=
2500
A
5STP
12N8500
Fig. 17 Woff = f(V0,IT), Tj = 125°C.
Half sinusoidal waves. tP = 10 ms.
Fig. 18 Woff = f(V0,di/dt), Tj = 125°C.
Rectangular waves.