1MBI200NK-060 IGBT Module 600V / 200A Chopper Module Features * High speed switching * Low inductance module structure * Suitable for Chopper circuit Applications * Uninterruptible power supply * Inverter for Motor drive Equivalent Circuit Schematic Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) IGBT FWD Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms Max. power dissipation Repetitive peak dissipation Forward current 1ms Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse PC VRRM IF IF pulse Tj Tstg Vis Mounting *1 Terminals *1 IGBT Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Dis Turn-off time FWD t n o c Diode forward on voltage Reverse recovery time Reverse current ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr IRRM IGBT FWD G1 E1 G2 Current control circuit Thermal resistance Symbol d d o r p Characteristics Min. Typ. Max. - - 2.0 - - 30 4.5 - 7.5 - - 2.8 - 13200 - - 2930 - - 1330 - - 0.6 1.2 - 0.2 0.6 - 0.6 1.0 - 0.2 0.35 - - 3.0 - - 0.3 - - 2.0 Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.025 E2 . t c u Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=200mA VGE=15V, IC=200A VGE=0V VCE=10V mA A V V pF f=1MHz VCC=300V IC=200A VGE=15V RG=9.1ohm IF=200A, VGE=0V IF=200A VR=600V s V s mA Thermal resistance characteristics Item E2 e u n i Electrical characteristics (at Tj=25C unless otherwise specified) Symbol C1 *1 : Recommendable value : 2.5 to 3.5 N*m (M5) Item C2E1 Unit V V A A W V A A C C V N*m N*m Rating 600 20 200 400 780 600 200 400 +150 -40 to +125 AC 2500 (1min.) 3.5 3.5 Conditions Unit IGBT FWD the base to cooling fin C/W C/W C/W Max. 0.16 0.35 - *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ IGBT Module 1MBI200NK-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125C 400 400 300 300 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 200 200 100 100 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C VCE [V] 10 8 8 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : 2 Collector-Emitter voltage : VCE [V] 10 6 4 2 0 0 5 10 15 25 6 . t c u 4 d e u n i t n o c Dis 20 Gate-Emitter voltage : VGE [V] 2 d o r p 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1 Collector-Emitter voltage : VCE [V] 100 100 10 10 0 100 200 300 0 Collector current : Ic [A] http://store.iiic.cc/ 100 200 Collector current : Ic [A] 300 IGBT Module 1MBI200NK-060 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 100 500 25 400 20 300 15 200 10 100 5 0 10 5 0 10 200 400 600 800 0 1200 1000 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 500 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Forward current : IF [A] 400 300 100 0 1 . t c u 200 0 100 t n o c Dis 2 3 Forward voltage : VF [V] d e u n i d o r p 10 0 4 100 200 300 Forward current : IF [A] Reversed biased safe operating area > 9.1 ohm +VGE=15V, -VGE < = 15V, Tj <=125C, RG = Transient thermal resistance 2000 1600 Collector current : Ic [A] Thermal resistance : Rth (j-c) [C/W] 1800 0.1 1400 1200 1000 800 600 400 0.01 200 0 0.001 0.01 0.1 1 0 Pulse width : PW [sec.] http://store.iiic.cc/ 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25C Switching time vs. RG Vcc=300V, Ic=200A, VGE=15V, Tj=25C IGBT Module 1MBI200NK-060 Capacitance vs. Collector-Emitter voltage Tj=25C Switching loss vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=15V Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ/cycle] 20 15 10 5 10 1 0 0 100 200 0 300 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Outline Drawings, mm Di d e u n i t n o c s . t c u http://store.iiic.cc/ d o r p 30 35