1MBI200NK-060 IGBT Module
600V / 200A Chopper Module
Features
· High speed switching
· Low inductance module structure
· Suitable for Chopper circuit
Applications
· Uninterruptible power supply
· Inverter for Motor drive
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltage VGES
Collector Continuous IC
current 1ms IC pulse
Max. power dissipation PC
Repetitive peak dissipation VRRM
Forward IF
current 1ms IF pulse
Operating temperature Tj
Storage temperature Tstg
Isolation voltage Vis
Screw torque Mounting *1
Terminals *1
Rating
600
±20
200
400
780
600
200
400
+150
-40 to +125
AC 2500 (1min.)
3.5
3.5
Unit
V
V
A
A
W
V
A
A
°C
°C
V
N·m
N·m
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Tu r n-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Reverse current
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
IRRM
– – 2.0
– – 30
4.5 – 7.5
– – 2.8
– 13200 –
– 2930 –
– 1330 –
– 0.6 1.2
– 0.2 0.6
– 0.6 1.0
– 0.2 0.35
– – 3.0
– – 0.3
– – 2.0
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=200mA
VGE=15V, IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=200A
VGE=±15V
RG=9.1ohm
IF=200A, VGE=0V
IF=200A
VR=600V
mA
µA
V
V
pF
µs
V
µs
mA
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*2
– – 0.16
– – 0.35
– 0.025 –
IGBT
FWD
the base to cooling fin
°C/W
°C/W
°C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
¤ Current control circuit
G1 E1 G2 E2
C1 IGBT FWD E2
C2E1
¤
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
IGBT
FWD
IGBT
FWD
廃型機種
Discontinued product.
http://store.iiic.cc/
1MBI200NK-060 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=300V, RG=9.1 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current
Vcc=300V, RG=9.1 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
400
300
200
100
00
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
10
8
6
4
2
00 5 10 15 20 25 0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
10 0 100 200 300
Collector current : Ic [A] Collector current : Ic [A]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
10
400
300
200
100
0 100 200 300
廃型機種
Discontinued product.
http://store.iiic.cc/
1MBI200NK-060 IGBT Module
Switching time vs. RG
Vcc=300V, Ic=200A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
5 10 Gate charge : Qg [nC]
0 200 400 600 800 1000 1200
100
1000
10
500
400
300
200
100
0
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Forward current : IF [A]
500
400
300
200
100
00 1 2 3 4
Gate-Emitter voltage : VGE [V]
0
5
10
15
20
25
Forward voltage : VF [V]
Reverse recover y current : Irr [A]
Reverse recovery time : trr [n sec.]
Forward current vs. Forward voltage
VGE=0V
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current : IF [A]
100
10
Thermal resistance : Rth (j-c) [°C/W]
Transient ther mal resistance
0.01
0.1
0.001 0.01 0.1 1
Pulse width : PW [sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj =125°C, RG = 9.1 ohm
0 100 200 300
<<>
2000
1000
800
600
400
200
00 100 200 300 400 500 600
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
1200
1400
1600
1800
廃型機種
Discontinued product.
http://store.iiic.cc/
1MBI200NK-060 IGBT Module
Outline Drawings, mm
Switching loss vs. Collector current
Vcc=300V, RG=9.1 ohm, VGE=±15V
Switching loss : Eon, Eoff, Err [mJ/cycle]
Collector current : Ic [A]
0
10
5
15
20
0 100 200 300 Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 30 35
1
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
廃型機種
Discontinued product.
http://store.iiic.cc/
