Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB481K / RB481KFH
Application Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra small mold type.
(UMD4)
2) Low V
F
Structure
3) High r eliability
Construction Taping specifications (Unit : mm)
Silicon epitaxial planar
Absolute maximum rati ngs ( Ta = 25°C)Symbol Unit
Reverse voltage (repetitive peak) V
RM
V
Reverse voltage ( DC) V
R
V
Average rectified f or ward curr ent (*1) Io mA
I
FSM
A
Junction temperat ur e Tj °C
Storag e t em per at ure Tstg °C
(*1) Rat ing of per diode
Symbol Min. Typ. Max. Unit
V
F
1- - 0.28 V I
F
=10mA
V
F
2- - 0.33 V I
F
=100mA
V
F
3- - 0.43 V I
F
=100mA
V
F
4- - 0.50 V I
F
=100mA
I
R
--30
AV
R
=10V
Reverse current
125
40 to 125
Electrical charact eri st i cs ( Ta= 25°C)
Parameter Conditions
Forward voltage
Parameter Limits
30
30
200
Forward current surge peak (60Hz・1cyc) (*1)
1
dot (year week factory)
ROHM : UMD4
JEITA : SC-82
JEDEC : SOT-343 1Pin Mark
UMD4
0.6
1.6
0.9MIN
1.3
2.0±0.2
2.1±0.1
1.25±0.1
0.25±
0.1
0.05
各リードとも
同寸法
(3) (2)
1.3±0.1
0.65 0.65
(4) (1)
0.15±0.05
0.9±0.1
0.7
0.1Min
0～0.1
Each lead has same dimension
2.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.55±0.05
.35± .005 1.±57.01
.8±0.02
1.15±0.1
.24± .01
φ1.1±0.1
.254±0.1
0.3±0.1
.24± .0 1
.55± .02
00.5
1/4 2012.12 - Rev.D
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481K / RB481KFH
0.01
0.1
1
10
100
1000
10000
100000
0102030
Ta = 75°C
Ta = 25°C
Ta = 25°C
Ta = 125°C
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500
Ta = 25°C
Ta = 125°C
Ta = 25°C
Ta = 75°C
1
10
100
0 5 10 15 20
f= 1MHz
400
410
420
430
440
450
AVE : 421.0 mV
Ta=25°C
IF=200mA
n=10pcs
0
5
10
15
20
25
30
35
40
45
50
Ta=25°C
VR=10V
n=30pcs
AVE : 4.775A
10
11
12
13
14
15
16
17
18
19
20
AVE : 14.33pF
Ta=25°C
f=1MHz
VR=0V
n=10pcs
FORWARD VOLTAGE : VF(mV)
VF-IFCHARACTERISTICS REVERSE VOLT AGE : VR(V)
VR-IRCHARACTERISTICS
REVERSE CURRENT : IR(A)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF )
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VFDISPERSION MAP
REVERSE CURRENT : IR(A)
IRDISPERSION MAP Ct DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS : Ct(pF )
FORWARD CURRENT : IF(mA)
2/4
2012.12 - Rev.D
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481K / RB481KFH
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA IF=100mA
300s
time
Mounted on epoxy board
0
5
10
15
20
AVE : 5.60A
0
5
10
110100
0
5
10
1 10 100
0
0.05
0.1
0.15
0.2
0 0.1 0.2 0.3 0.4 0.5
Sin(θ=180)
DC
D = 1/2
0
0.1
0.2
0.3
0.4
0.5
0 102030
Sin(θ=180)
DC
D = 1/2
IFSM DISPERSION MAP NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE : Rth (°C/W)
TIME : t(s)
Rth-t CHARACTERISTICS
FORWARD POWER
DISSIPATION : Pf(W)
AVERAGE RECTIF IED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
1cyc.
8.3ms
IFSM 8.3ms
8.3ms
IFSM
1cyc.
IFSM time
REVERSE VOLTAGE : VR(V)
VR-PRCHARACTERISTICS
REVERSE POW ER
DISSIPATION : PR(W)
3/4
2012.12 - Rev.D
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481K / RB481KFH
0
0.1
0.2
0.3
0.4
0.5
0 25 50 75 100 125
Sin(θ=180)
DC
D = 1/2
0
0.1
0.2
0.3
0.4
0.5
0 25 50 75 100 125
Sin(θ=180)
DC
D = 1/2
TTj=125°C
D=t/T
tV
R
Io
VR=15V
0A
0V
TTj=125°C
D=t/T
tVR
Io
VR=15V
0A
0V
CASE TEMPARATURE : Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
AVERAGE RECTIF IED
FORWARD CURRENT : Io(A)
AVERAGE RECTIF IED
FORWARD CURRENT : Io(A)
4/4
2012.12 - Rev.D
R1102
A
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© 2012 ROHM Co., Ltd. All rights reserved.
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