AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. VDS (V) = -30V ID = -17A RDS(ON) < 7m RDS(ON) < 8m RDS(ON) < 9m -RoHS Compliant -Halogen Free (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -4V) ESD Protected! D SOIC-8 D Rg G G S S Absolute Maximum Ratings TJ=25C unless otherwise noted Parameter Symbol V Drain-Source Voltage DS VGS Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain Current Power Dissipation B ID IDM TA=70C TA=25C Junction and Storage Temperature Range t 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. A -160 3.1 W 2.0 TJ, TSTG Symbol AD V -13 PD TA=70C A 20 -17 C Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead -30 Units V Maximum RJA RJL -55 to 150 Typ 31 59 16 Max 40 75 24 C Units C/W C/W C/W www.aosmd.com AO4447AL Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID =-250A, VGS = 0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS = 0V, VGS =16V VGS(th) Gate Threshold Voltage VDS =VGS ID =-250A -0.8 ID(ON) On state drain current VGS =-10V, VDS =-5V -160 TJ = 55C VGS =-10V, ID =-17A Static Drain-Source On-Resistance TJ=125C Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -1.6 V 5.5 7 A 8 VGS =-4V, ID =-13A 6.9 9 VDS =-5V, ID =-17A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance -1.3 8.5 Forward Transconductance 70 -0.62 4580 VGS=0V, VDS=-15V, f=1MHz VGS=-10V, VDS=-15V, ID=-17A VGS=-10V, VDS=-15V RL=-0.9, RGEN=3 m S -1 V -3 A 5500 pF 755 pF 564 VGS=0V, VDS=0V, f=1MHz A A 7 Diode Forward Voltage IS =-1A,VGS = 0V Maximum Body-Diode Continuous Current Units 10 6.5 VSD Coss -5 VGS =-4.5V, ID =-15A gFS IS Max V VDS =-30V, VGS = 0V IDSS RDS(ON) Typ pF 160 210 87 105 nC 41 nC 12.8 nC 17 nC 180 ns 260 1.2 ns s 9.7 s trr Body Diode Reverse Recovery Time IF=-17A, dI/dt=300A/s 32 Qrr Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/s 77 40 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial T J =25C. D. The RJA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. #REF! F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev 0: Aug 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 160 -10V 140 -4V -4.5V 120 VDS=-5V -3.5V 80 60 80 -ID(A) -ID (A) 100 -3V 60 40 40 125C 20 VGS= -2.5V 20 25C 0 0 0 1 2 3 4 5 0 10 2 3 4 Normalized On-Resistance 1.8 8 RDS(ON) (m) 1 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -VDS (Volts) Figure 1: On-Region Characteristics(Note E) VGS=-4V 6 VGS=-4.5V VGS=-10V 4 2 0 5 10 15 1.6 VGS= -10V ID= -17A 1.4 VGS= -4.5V ID= -15A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/s 20 25 30 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 1E+02 20 ID= -17A 1E+01 16 125C IS (A) RDS(ON) (m) 1E+00 12 1E-01 125C 8 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 4 25C OUT OF SUCH APPLICATIONS OR USES OF 25C ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 1E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics(Note E) Voltage(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 VDS=-15V ID= -17A 6000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 5000 4000 3000 2000 Coss 1000 Crss 0 0 0 20 40 60 80 0 100 10s RDS(ON) limited 25 30 100s 1ms 10ms 1 100ms 10s DC TJ(Max)=150C TA=25C 0.01 0.01 0.1 30 Power (W) -ID (Amps) 20 TJ(Max)=150C TA=25C 100 20 10 0 0.001 I =-6.5A, dI/dt=100A/s 10 100 F 1 -VDS (Volts) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJA Normalized Transient Thermal Resistance 15 40 1000 0.1 10 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL Gate Charge Test Circuit & Waveform Vgs Qg - + VDC Qgs Vds Qgd + DUT - VDC -10V Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off t on Vgs Rg VDC - DUT Vgs td(on) t d(off) tr tf 90% Vdd + Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.aosmd.com