BSP89 Rev. 2.1 SIPMOS O Small-Signal-Transistor Feature Product Summary * N-Channel VDS RDS(on) * Enhancement mode ID * Logic Level 240 V 6 W 0.35 A PG-SOT223 * dv/dt rated * Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant * ee 4 x Qualified according to AEC Q101 3 2 1 Type Package Tape and Reel Information Marking Packaging BSP89 PG-SOT223 L6327: 1000 pcs/reel BSP89 Non dry Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Continuous drain current Value Unit A ID TA=25C 0.35 TA=70C 0.28 Pulsed drain current VPS05163 ID puls 1.4 dv/dt 6 VGS 20 TA=25C Reverse diode dv/dt kV/s IS=0.35A, V DS=192V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD class (JESD22-A114-HBM) V 1A (>250V, <500V) Power dissipation Ptot 1.8 W -55... +150 C TA=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2009-08-18 BSP89 Rev. 2.1 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 @ min. footprint - - 115 @ 6 cm2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 240 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V V GS=0, ID=250A Gate threshold voltage, VGS = VDS ID=108A Zero gate voltage drain current A IDSS V DS=240V, VGS=0, Tj=25C - - 0.1 V DS=240V, VGS=0, Tj=150C - - 10 IGSS - - 10 nA RDS(on) - 4.9 7.5 W RDS(on) - 4.2 6 Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.32A Drain-source on-state resistance V GS=10V, ID=0.35A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 BSP89 Rev. 2.1 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.18 0.36 - S pF Dynamic Characteristics Transconductance g fs V DS2*I D*RDS(on)max, ID=0.28A Input capacitance Ciss V GS=0, VDS=25V, - 80 140 Output capacitance Coss f=1MHz - 11.2 16.8 Reverse transfer capacitance Crss - 5.2 7.8 Turn-on delay time td(on) V DD=120V, V GS=10V, - 4 6 Rise time tr ID=0.35A, R G=6W - 3.5 5.3 Turn-off delay time td(off) - 15.9 23.8 Fall time tf - 18.4 27.6 - 0.2 0.3 - 2 3 - 4.3 6.4 V(plateau) V DD=192V, ID = 0.35 A - 3.1 - V IS - - 0.35 A - - 1.4 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=192V, ID=0.35A V DD=192V, ID=0.35A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0, IF = IS - 0.85 1.2 V Reverse recovery time trr V R=120V, IF=lS, - 67 100 ns Reverse recovery charge Qrr di F/dt=100A/s - 123 184 nC Page 3 2009-08-18 BSP89 Rev. 2.1 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: V GS 10 V 1.9 BSP89 0.38 A 1.6 0.32 1.4 0.28 1.2 0.24 ID Ptot W BSP89 1 0.2 0.8 0.16 0.6 0.12 0.4 0.08 0.2 0.04 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 C TA 3 Safe operating area 4 Transient thermal impedance ID = f ( V DS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 C parameter : D = t p/T 10 160 TA 1 BSP89 10 2 A BSP89 K/W tp = 160.0s /ID RD o S( n) = VD 10 1 S ZthJA ID 10 0 1 ms 10 ms 10 -1 10 0 D = 0.50 0.20 0.10 10 -2 10 -1 0.05 single pulse 0.02 DC 0.01 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2009-08-18 4 BSP89 Rev. 2.1 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 C, VGS parameter: Tj = 25 C, VGS 9 0.6 W A RDS(on) 7 ID 0.4 6 5 0.3 4 3V 3.4V 3.6V 4.2V 4.6V 5V 6V 10V 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 3V 3.4V 3.6V 4.2V 4.6V 5V 6V 10V 3 2 1 V VDS 0 0 5 0.1 0.2 0.3 0.4 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max g fs = f(ID) parameter: Tj = 25 C parameter: Tj = 25 C 0.6 A S 0.4 0.4 ID g fs 0.6 0.3 0.3 0.2 0.2 0.1 0.1 0 0 0.5 1 1.5 2 2.5 V 0.6 A 3.5 VGS 0 0 0.1 0.2 0.3 0.4 0.6 A ID Page 5 2009-08-18 BSP89 Rev. 2.1 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 0.35 A, VGS = 10 V parameter: V GS = VDS; ID =108A 30 BSP89 2.2 W V VGS(th) RDS(on) 24 22 20 18 1.6 1.2 14 1 12 typ. 1.4 16 2% 0.8 10 8 0.6 98% 6 0.4 typ 4 0.2 2 0 -60 98% 1.8 -20 20 60 100 C 0 -60 180 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0, f=1 MHz, Tj = 25 C parameter: Tj 10 3 10 1 BSP89 A pF Ciss 10 0 C IF 10 2 Coss 10 1 10 -1 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 V 30 VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-08-18 BSP89 Rev. 2.1 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , ID = 0.35 A pulsed, Tj = 25 C V(BR)DSS = f (Tj) 16 BSP89 291 BSP89 V V(BR)DSS V VGS 12 10 276 271 266 261 0.2 VDS max 256 0.5 VDS max 251 6 0.8 VDS max 246 8 241 236 4 231 226 2 221 0 0 1 2 3 4 5 nC 6.5 QG 216 -60 -20 20 60 100 C 180 Tj Page 7 2009-08-18 Rev. 2.1 Page 8 BSP89 2009-08-18