1
Trench Gate Design
Six IGBTMOD™
100 Amperes / 1200 Volts
CM100TJ-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
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Dimensions Inches Millimeters
A4.78 121.5
B2.42 61.5
C0.67 17.0
D 4.33±0.01 110.0±0.25
E3.00 76.2
F0.75 19.05
G0.60 15.24
H0.15 3.81
J2.26 57.5
K 1.97±0.01 50.0±0.25
L1.07 27.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offer ing simplified system assembly
and thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recovery
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□UPS
□Batter y Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TJ-24F is a
1200V (VCES), 100 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 100 24
Dimensions Inches Millimeters
M0.15 3.81
N0.75 19.05
P0.15 3.81
Q3.00 76.2
R0.60 15.24
S0.45 1.15
T0.04 1.0
U 0.22 Dia. 5.5 Dia.
V0.12 3.0
W0.81 20.5
X3.72 94.5
Y4.62 118.11
2
14
3568
7910 11 12
17
NOT
19
15
CONNECTED CONNECTED
NOT
20
21
14
13
1618
1
2
3
4
21
20
19
8
7
6
5
12
11
10
9
13
14
17 15
A
FH
BJK
Q
PR
D
L
C
T
SN
GU
Tc
Tc
V
X
Y
E
L
M
W
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CM100TJ-24F
Trench Gate Design Six IGBTMOD™
100 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100TJ-24F Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC100 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 200* Amperes
Emitter Current (Tc = 25°C)** IE100 Amperes
Peak Emitter Current** IEM 200* Amperes
Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) Pc390 Watts
Mounting Torque, M5 Mounting – 31 in-lb
Weight –300 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts
IC = 100A, VGE = 15V, Tj = 125°C– 1.9 – Volts
Total Gate Charge QGVCC = 600V, IC = 100A, VGE = 15V – 1100 – nC
Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 3.3 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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3
CM100TJ-24F
Trench Gate Design Six IGBTMOD™
100 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––39nf
Output Capacitance Coes VCE = 10V, VGE = 0V, f = 1MHz – – 1.7 nf
Re v erse Transf er Capacitance Cres ––1.6 nf
Inductive Tur n-on Delay Time td(on) VCC = 600V, – – 100 ns
Load Rise Time trIC = 100A, – – 50 ns
Switch Tur n-off Delay Time td(off) VGE1 = VGE2 = 15V, – – 400 ns
Times F all Time tfRG = 3.1⍀,––300 ns
Diode Reverse Recover y Time** trr Inductive Load – – 150 ns
Diode Reverse Recover y Charge** Qrr Switching Operation – 4.1 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)QPer IGBT 1/6 Module, Tc Reference – – 0.32 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)DPer FWDi 1/6 Module, Tc Reference – – 0.36 °C/W
Point per Outline drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, – 0.18 – °C/W
Tc Reference Point Under Chip
Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/6 Module, Tc Reference – 0.20 – °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.13 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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CM100TJ-24F
Trench Gate Design Six IGBTMOD™
100 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, V
GE
20
0
16
12
8
4
0
COLLECTOR CURRENT, IC, (AMPERES)
103
101102103
102
101
100
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10-1 100102
102
101
100
10-1 101
01.0 3.02.0 4.0
100
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
048121620
4
3
2
1
0
T
j
= 25°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
2.5
040 120160
2.0
1.5
1.0
0.5
0200
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
GE
= 0V
C
ies
C
oes
C
res
500 1000 1500
V
CC
= 600V
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1 Ω
T
j
= 125°C
Inductive Load
t
f
I
C
= 40A
I
C
= 200A
I
C
= 100A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
01234
120
40
0
V
GE
= 20V 11
10
9.5
9
T
j
= 25
o
C
80
160
200
8.5
8
15
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
100101102
102
101
102
101
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
t
rr
I
rr
Tj = 25°C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
R
th(j-c)
= 0.32°C/W (IGBT)
Under Chip = 0.18°C/W
R
th(j-c)
= 0.36°C/W (FWDi)
Per Unit Base
Single Pulse
T
C
= 25°C
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1 Ω
T
j
= 25°C
Inductive Load
V
CC
= 400V
80
I
C
= 100A