©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
File Number
9006
JANSR2N7430
Formerly Available As FSJ055R4,
Radiation Hardened, SEGR Resistant,
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100 krads of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: www.intersil.com. Contact
your local Intersil Sales Office for additional information.
Die Family TA17650.
MIL-PRF-19500/654.
Features
• 70A (Current Limited by Package), 60V, r
DS(ON)
= 0.012
Ω
• Total Dose
- Meets Pre-Rad Specifications to 100 krad (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with V
DS
up to
80% of Rated Breakdown and V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 Rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 6nA Per-Rad (Si)/s Typically
• Neutron
- Maintain Pre-Rad Specifications
for 3E13 Neutrons/cm
2
• Usable to 3E14 Neutrons/cm
2
Symbol
Packaging
TO-254AA
Ordering Information
PART NUMBER PACKAGE BRAND
JANSR2N7430T1 TO-254AA JANSR2N7430T1
CAUTION: Beryllia Warning per MIL-PRF-19500
refer to package specifications.
S
G
D
Data Sheet February 2001
[ /Title
(JANS
R2N74
30)
/Subjec
t
(Forme
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Availa
ble As
FSJ05
5R4,
Radiati
on
Harden
ed,
SEGR
Resista
nt,
N-Cha
nnel
Power
MOSF
ETs)
/Autho
r ()
/Keyw
ords
(Forme
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Availa
ble As
FSJ05
5R4,
Radiati
on
Harden
ed,
SEGR
©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JANSR2N7430 UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
60 V
Drain to Gate Voltage (R
GS
= 20k
Ω
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60 V
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
70 (Note) A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
54 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
200 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20 V
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
151 W
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
60 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/
o
C
Single Pulsed Avalanche Current, L = 100
µ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
AS
200 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
70 A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
200 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300
9.3
o
C
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: Current is limited by the package capability.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 1mA, V
GS
= 0V 60 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C - - 5.0 V
T
C
= 25
o
C 1.5 - 4.0 V
T
C
= 125
o
C 0.5 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 48V,
V
GS
= 0V
T
C
= 25
o
C--25
µ
A
T
C
= 125
o
C--250
µ
A
Gate to Source Leakage Current I
GSS
V
GS
=
±
20V T
C
= 25
o
C - - 100 nA
T
C
= 125
o
C--200nA
Drain to Source On-State Voltage V
DS(ON)
V
GS
= 12V, I
D
= 70A - - 0.88 V
Drain to Source On Resistance r
DS(ON)12
I
D
= 54A,
V
GS
= 12V
T
C
= 25
o
C - 0.008 0.012
Ω
T
C
= 125
o
C - - 0.022
Ω
Turn-On Delay Time t
d(ON)
V
DD
= 30V, I
D
= 70A,
R
L
= 0.43
Ω
, V
GS
= 12V,
R
GS
= 2.35
Ω
- - 40 ns
Rise Time t
r
- - 200 ns
Turn-Off Delay Time t
d(OFF)
- - 70 ns
Fall Time t
f
- - 40 ns
Total Gate Charge (Not on slash sheet) Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 30V,
I
D
= 70A
- - 280 nC
Gate Charge at 12V Q
g(12)
V
GS
= 0V to 12V - 150 170 nC
Threshold Gate Charge (Not on slash sheet) Q
g(TH)
V
GS
= 0V to 2V - - 12 nC
Gate Charge Source Q
gs
-3543nC
Gate Charge Drain Q
gd
-5981nC
Thermal Resistance Junction to Case R
θ
JC
- - 0.83
o
C/W
Thermal Resistance Junction to Ambient R
θ
JA
--40
o
C/W
JANSR2N7430
©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
SD
I
SD
= 70A 0.6 - 1.8 V
Reverse Recovery Time t
rr
I
SD
= 70A, dI
SD
/dt = 100A/
µ
s - - 250 ns
Electrical Specifications up to 100 krad
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
DSS
V
GS
= 0, I
D
= 1mA 60 - V
Gate to Source Threshold Volts (Note 3) V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA 1.5 4.0 V
Gate to Body Leakage (Notes 2, 3) I
GSS
V
GS
=
±20V, VDS = 0V - 100 nA
Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 48V - 25 µA
Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 70A - 0.88 V
Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 54A - 0.012 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) Note 4
TEST SYMBOL
ENVIRONMENT (NOTE 5) APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 60
Br 37 36 -10 60
Br 37 36 -15 48
Br 37 36 -20 36
I6031060
I6031-548
I 60 31 -10 36
I 60 31 -15 24
I 60 31 -20 12
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO IAS
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 60MeV/mg/cm2, RANGE = 31µ
40
0
0 -10 -15 -20 -25-5
VGS (V)
VDS (V)
10
20
30
50
60
70
TEMP = 25oC
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
30010010
LIMITING INDUCTANCE (HENRY)
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
JANSR2N7430
©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Performance Curves (Continued)
ID, DRAIN (A)
TC, CASE TEMPERATURE (oC)
150100500-50
0
20
40
30
10
100
90
80
70
60
50
100
10
1
1
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10 1000.1 300
500
OPERATION IN THIS 100ms
1ms
100µs
10ms
TC = 25oC
AREA MAY BE
LIMITED BY rDS(ON)
CHARGE
QGD
QG
VG
QGS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
rDS(ON), NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
250ms PULSE TEST
VGS = 12V, ID = 54A
NORMALIZED
1
0.1
0.01
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
THERMAL RESPONSE (ZθJC)
0.001
10
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
0.5
0.02
0.1
0.01
0.2
JANSR2N7430
©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Performance Curves (Continued)
100
10
0.01 0.1 1
tAV , TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
10
500
STARTING TJ = 25oC
STARTING TJ = 150oC
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R = 0
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
tP
VGS ≤ 20V
L
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
50Ω
50Ω
50V-150V
IAS
+
-
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
CURRENT
TRANSFORMER VDD
VDS
BVDSS
tP
IAS
tAV
VDS
DUT
RGS
0V
VGS = 12V
VDD
RL
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%50%
10% PULSE WIDTH
VGS
tON
JANSR2N7430
©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANS) TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MAX UNITS
Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA
Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA
Drain to Source On Resistance rDS(ON) TC = 125oC at Rated ID±20% (Note 8) Ω
Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST JANS
Unclamped Inductive Switching VGS(PEAK) = 15V, L = 0.1mH; Limit = 200A
Thermal Response tH = 100ms; VH = 25V; IH = 4A; Limit = 120mV
Gate Stress VGS = 30V, t = 250µs
Pind Required
Pre Burn-In Tests (Note 9) MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA 5%
Final Electrical Tests (Note 9) MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER SYMBOL TEST CONDITIONS MAX UNITS
Safe Operating Area SOA VDS = 48V, t = 10ms 11 A
Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 4A 200 mV
JANSR2N7430
©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
Rad Hard Data Packages - Intersil Power Transistors
1. JANS Rad Hard - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet
I. Group D - Attributes Data Sheet
2. JANS Rad Hard - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A - Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B - Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C - Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D - Attributes Data Sheet
- Pre and Post Radiation Data
JANSR2N7430
©2001 Fairchild Semiconductor Corporation JANSR2N7430 Rev. A
JANSR2N7430
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
D
L
Q
H1
e
e1
J1
A1
A
EØP
Øb
0.065 R MAX.
TYP.
12 3
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.249 0.260 6.33 6.60 -
A10.040 0.050 1.02 1.27 -
Øb 0.035 0.045 0.89 1.14 2, 3
D 0.790 0.800 20.07 20.32 -
E 0.535 0.545 13.59 13.84 -
e 0.150 TYP 3.81 TYP 4
e1 0.300 BSC 7.62 BSC 4
H10.245 0.265 6.23 6.73 -
J10.140 0.160 3.56 4.06 4
L 0.520 0.560 13.21 14.22 -
ØP 0.139 0.149 3.54 3.78 -
Q 0.110 0.130 2.80 3.30 -
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation
which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be
subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
Star* Power™
Stealth™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
Rev. H1
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
