MOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 SiliconixIRF330 = IRF334 = IRF332 = IRF333 Ss IRF730 = IRF734 = IRF732 = IRF733 Siliconix N-Channel MOSPOWER FETs 400V Enhancement-Mode These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. r FEATURES Product Summary e rt s High Voltage Number | BYoss | Rosiom | Ip | Package ma No Second Breakdown IRF330 400V 55A s High Input Impedance inFs37 | asov | 103 a Internal Drain-Source Diode IRF332 400V = Very Rugged: Excellent SOA IAFI33 | aso | 8? | 4 8A u Extremely Fast Switching IRF730 400V son SBA IRF731 350V , , TO-220AB BENEFITS IRF732 400V 5A 9 u Reduced Component Count IAF7a3 | a60V oe a Improved Performance = Simpler Designs Z; s Improved Reliabilit Pp y ool s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Pulsed Drain Current (80us to 300us, 1% duty cycle).... + 22A IRF330, 332, 730,782... 2.6... ccc e cee e eee cece eens 400V IRF331, 333, 731,733... 0... eee eee nee 350V Gate Current (Peak) .. 0... eect eee aes + 3A Drain-Gate Voltage IRF330, 332, 730, 732.00... 00cc cece ccc e eee eens 400V Gate-Source Voltage 2.0... 6. cece eects +40V IRF331, 333, 731, 733.0... ee cece eee eee eee e eens 350V . gs entanes Maximum Power Dissipation .............0 00 -e seen 75W Continuous Drain Current, To = 25C : : IRF330, 331, 730, 731... 0. ss. eccececeeeesecetees 5.5A Linear Derating Factor... 1... cece eee eee 0.6 wi Cc IRF332, 333, 732, 733......... cc eee eee +4.5A Operating and Storage Temperature........... 55 to 150C PACKAGE DIMENSIONS [we (22.225) sm aaa ast es 1 R oe (3.429) MAX ~~ (6.85) , , ap TT 0.043 7.092) 0.352 SEATING aos 7oses) | in a 0875 17.148) 1.177 (29.896) 0.139 (3.54) 535) 0.655 (16.637) . . 0.188 TSN EAS wa lee * st oaao (71.176) Y fpn {| ? \ 420 (10.60) : : ozo frase AIK | 1 TS 7 0.461 (4.089) 045 (1.15) } abs Nai os 13.835) We es - 9.205" (5.207) orem view (13.335) BMAX je - :568 a e| PIN 1 Gate PIN 1 - Gate PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source TO-204AA (TO-3) TO-220AB 2-20 SiliconixElectrical Characteristics (Ic =25C unless otherwise specified) . Symbol | Parameter | Part Number | Min | Typ | Max Unit | Test Conditions Static IRF 330, 730 IRF 332, 732 | 400 BVpss Drain-Source Breakdown Vo | Ves =0, Ip = 250uA IRF 331, 731 3 IRF 333, 733 | 95 Vasith) Gate Threshold Voltage Alt 2 3.3 4 V_ | Ves=Vps, Ip=1tmA lass Gate Body Leakage All 10 +100 nA | Vgg=+#20V, Vps=0 loss Zero Gate Voltage Drain All 0.1 | 025 | 1, | VYos=Rated Vos, Vas =0 Current 05 | 1.0 Vps = Rated Vpg, Ves = 0, To = 125C IRF 330, 730 IRF 331, 731 og | 1 TDsyon) Drain-Source On a Q | Vgg=10V, Ip = 3A (Note 1) Resistance IRF 332, 732 12 15 IRF 333, 733 . . IRF 330, 730 IRF 331, 731| 55 | 8 'p(on) On-State Drain Current RF 332, 730 A_ | Vos=25V, Ves = 10V (Note 1) IRF 333,733 | 45 | 8 Dynamic dfs Forward Transconductance All 3 3.5 S| Vps = 100V, Ip = 3A (Note 1) Ciss Input Capacitance All 800 900 Reverse Transfer Cres Capacitance All 25 | 80 | BF | Vag=0, Vpg = 25V, f= 1MHz Common-Source Output Coss Capacitance All 150 300 taion) Turn-On Delay Time All 30 tr Rise Time All 38 | ag | VoD = 200V, Ip=3A, Ri =672, Rg = 109, tao) | Turn-Off Delay Time All 55 (Figure 1) te Fall Time All 35 Drain-Source Diode Characteristics Typ. Vsp Forward ON Voltage All -1.4 v Ig =5.5A (Note 1) Ip =IR=5.5A, Veg =9, tr Reverse Recovery Time All 400 ns is gure 2) cs Note 1: Pulse Test 80us to 300 ys, 1% duty cycle Refer to VNDA40 Design Curves (See Section 4) s CIRCU TS FIGURE 2 Reverse Recovery Test Circuit pe FIGURE 1 Switching Test Circuit 502 di/dt Adjust (1 - 27 tH} oa 5 TO 50uF IN4933 Fr _ ewyAdiust \ | e rT | nw + | Loy 9 240.9 f Regen OUT + > 1N4001 | | 4000uF -~pi- | \ - 20v | R$ 0.252 | L$ 0.01uH CIRCUIT = ld e la A 1 purse | | Gaber = | +- WA [GENERATOR] [TEST _ meres 2naao4 SCOPE PW. = 1 ps Cg <50 pF rYYyYs DUTY CYCLE = 1% FROM TRIGGER CKT Siliconix CeZsddl = COLA = LEZAl = OCZIal eceddl = CECdal = LECdal = OCesalTYPICAL STATIC CHARACTERISTICS (Pulse width 80us300)s, Duty cycle 1%, Tc =25C) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, Ip DRAIN CURRENT (AMPS) K, NORMALIZED ON RESISTANCE IRF 332, IRF333, IRF730, [RF731, IRF732, IRF733 Ohmic Region 20 16 Vas =20V 12 Vosisar) DRAIN SOURCE SATURATION VOLTAGE (VOLTS) 0 Qo 10 20 30 40 50 Vos DRAIN-SOURCE VOLTAGE (VOLTS) Temperature Effects on rpsjon) 2.4 a 2.0 = 2 8 1.6 Y z & 1.2 a wi LL) z 0.8 7 : 5 B 1 0.4 g 0 ~50-25 0 25 50 75 100 125 150 175 Ty JUNCTION TEMPERATURE (C) Transfer Characteristics VNDA4O Voltage Saturation Region 20 16 8A 6A 4A 2A 0 2 4 6 + 8 0 12 0 Vas Vesith GS(th) GATE ENHANCEMENT VOLTAGE (VOLTS) ON Resistance Characteristics 1:8 Ip = 10A 1.6 1.4 1.2 1.0 0.8 oO 0 2.4 6 8 10 12 Vas Vasith): GATE ENHANCEMENT VOLTAGE (VOLTS) Output Characteristics 10 BEC 20 Vos = 50V t a 25C a 8 a = 125C = 16 < = E & z 6 a 12 x ec a > > Oo z 4 Zz 8 < < a i 2 25C I 4 3 4 3 125C 3 0 2 4 6 8 0 40 120. 160 200 Vas ~ GATE SOURCE VOLTAGE (VOLTS) Vos DRAIN-SOURCE VOLTAGE (VOLTS) 01/83 Siliconix 4-5 OVVONATRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF 333, IRF730, IRF731, IRF732, IRF733 Safe Operating Area, Active Region, TO-3 Package VNDA40 Safe Operating Area, Active Region, TO-220AB Package 100 10 y oe 10 ys J = 50 [CURRENT DEPENDS a < J NounneNr. | 4 2 UPON rps(on) a DEPENDS 7 = 20 = L WN UPON rosion\ | J = 10 | VN9S008 = 2 NNR N 100 us o . a ~ \S alle VN3501A & 4b-Tc=28 NS | 1 2 = [VN4001A 3 E NAAN CH iins 4 = 10 2 ost | NS N | 1 = 1 + A-IRF331,3,731,3 NA Nio ms 4 Oo 08 a | B-IRF330, 2,730, 2 1 4 I N a 5 pc 1 g.a|_ C-IRE330, 1 730, 1 DC NJ} 100 ms = oe To = 25C gg %2)~D-RF332,3 732, 3 0.1 0.4 | 1 Lol 1 Lit 10 20 50 100 200 500 1000 10 620 50 100 200 500 1000 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Vps - DRAIN SOURCE VOLTAGE (VOLTS) Power Derating Safe Operating Area, Switching 150 1.50 20 = 125 1.28 a A SUFFIX x 16 z s = 9 )} << ~ =< 100 10 Oo a Po| 5 612 a a N\ A rd oo. 21 Kp | & SUFFIX ons 2 D SUFFIX Bj a aX) Rac = 12 cw) ZO 2 12 i A 9 2 21> = 50 NOAA oso = SWITCHING LOAD 8 is 2 SeN N\ 9 5 LINES MUST LIE S > D SUFFIX | MOS 9 7 gL WITHIN THis AREA | [5 | ao 25 } {Pp SS 0.25 a VALID FOR t, AND t+ a Rajc = 1.67C/W = UNDER ONE | | 0 MICROSECOND Q 0 25 50 75 100 125 150 175 0 100 200 300 400 500 Tc CASE TEMPERATURE (C) Vps DRAIN SOURCE VOLTAGE (VOLTS) The safe operating area data of Active Region, TO-3 Package and Active Region, TO-220AB Package indicates maximum operating current Thermal Response as a function of voltage and time at Tg = 25C. At 1.0F Trim ty elevated temperatures, power must be derated E > using the derating factor, Kp from Power fe a Derating. Current limitations imposed by "psion) [ Zo | 7] are not shown except at 25C. When operating in | D SUFFIX Zz J fheonmic region, the maximum current is found = = E A SUFFIX 4 lo= (-Pg) 7 or K, Fpsion) @ 25C 4 where Pp is the power dissipation at operating + case temperature and rpgin) is the on resistance for the part. K, is the multiplying factor for on-re- 0.0 Pett ui tot vit bd tty {LU pdb i sistance at the maximum rated junction tempera- 0.01 0.1 1.0 10 100 1000 ture taken from Temperature Effects on rpgion)- TIME (mS) Since on-resistance varies somewhat with cur- rent, some iteration of Ip and rpgion) Must be done using ON Resistance Characteristics as a guide. SiliconixTYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF333, IRF730, IRF731, IRF732, IRF733 SWITCHING TIME Eftects of Load Conditions z z ul = = - - g g = = g eg 5 5 | I Vin = 10V = 100 1 2 3C4 8 10 Ip DRAIN CURRENT (AMPS) CHARGE Turn-On Charge 400 Vos = 200V 300 Sow 200 Vas GATE-SOURCE VOLTAGE (VOLTS) Vos DRAIN SOURCE VOLTAGE (VOLTS) (SLIOA) JOVLIOA ZOUNOS BLVD SPA 0 5 10 15 20 25 30 35 Q CHARGE (nC) VNDA4O Effects of Drive Resistance 1000 FT TT TTT q TTR Vin = 10V qa 500 | Vop = 200V. L Ip=3A 4 . taotfy A 200 100 |- 4 50. Z LL en | 20 tf ~ t 1 10 Lert pitiin 1 2 5 10 20 50 100 Rs -- SOURCE RESISTANCE (OHMS) Turn-Off Charge 16 400 Ry = 1000 =10V 0 5 10 15 20 25 30 @ CHARGE (nC) Switching Time Equations Qu Vos tayon) = 2 Agen In {| d(on) Vogt gen (es _ Vor Qg2o-Q Veg-V t= 9 8 Eg in VSS = *) Vg2 7 Vgi Veo 7 Vg2 OFF ON Vos 90% Vaa Voi Vga -10% ! 4 Qg1 Qg2 Qgs TURN-ON Qos Qg2 taotty = 9 Rgen In Vac ~ Vg2 Voge ~ "gt gi ON OFF vi Vea "7 ps \ Vg2 Vgi 2] T Qga Qg2 Qg: TURN-OFF 200 100 (SL10A) ADVLIOA JDUNOS-NIVEG SOA Siliconix OVVGNA