A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 50 mA 35 V
BVCER IC = 50 mA RBE = 10 Ω 60 V
BVEBO IE = 10 mA 4.0 V
ICES VE = 28 V 5 mA
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz 5.5 pF
PG VCE = 18 V ICQ = 220 mA f = 1.0 GHz
POUT = 2.0 W 9.0 dB
NPN SILICON RF POWER TRANSISTOR
MLN1033S
DESCRIPTION:
The ASI MLN1033S is Designed for
Class A Linear Applications up to 1.0 GHz.
FEATURES:
• Class A Operation
• PG = 9.0 dB at 2.0 W/1. 0 G Hz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE 35 V
PDISS 140 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 17 °C/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10627
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H.245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J.217 / 5.51
.220 / 5.59
K
.175 / 4.45 .285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D C
B
45° A
#8-32 UNC
I
J
S
S
D
G
