Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page IS660, IS661, IS662 High Voltage Photodarlington Isolators Circuit Features High CTR - 1000% Min 5000 V Isolation High Collector-Emitter Breakdown Voltage of 200 V, 300 V or 400 V Min Low Input Current Requirement - 1 mA Description The IS660, IS661 and IS662 are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and NPN silicon photodarlington transistor connected with diffusion resistor between the base and emitter at the output to minimise dark current, mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available. All electrical parameters are 100% tested. Specifications are guaranteed to a cumulative 0.65% AQL. Absolute Maximum Ratings (Ta=25C) Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage: -55C to +150C -55C to +100C 260C for 10s, 1.6mm from case 5000V Input Diode Forward DC Current: Forward Current Peak: Reverse DC Voltage: Power Dissipation: Derate Linearly: 60mA 1A (1s p.w. 300pps) 6V 70mW 0.93mW/C above 25C Output Transistor Collector-Emitter Voltage, BVceo: 200V (IS660) 300V (IS661) 400V (IS662) Collector-Base Voltage, BVcbo: 200V (IS660) 300V (IS661) 400V (IS662) Emitter-Base Voltage: 6V Power Dissipation: 300mW Derate Linearly: 4.0mW/C above 25C Package Total Power Dissipation: Derate Linearly: 350mW 4.67mW/C above 25C Electro-optical Characteristics (Ta=25C) INPUT PARAMETER CONDITIONS MIN TYP MAX UNIT VF Forward Voltage IF=10mA IR Reverse Current VR=6.0V VR Reverse Breakdown Voltage IR=10A 6.0 OUTPUT PARAMETER CONDITIONS MIN TYP MAX UNIT 1.2 1.5 V 10 A V Collector-Emitter Voltage BVCEO IS660 IS661 IC=1mA, IF=0 IS662 200 260 V 300 350 V 400 440 V 200 V 300 V 400 V 6 V Collector-Base Voltage BVCBO IS660 IS661 IC=0.1mA, IF=0 IS662 BVEBO Emitter-Base Voltage IE=0.1mA, IF=0 ICEO Collector-Emitter Dark Current IF=0, VCE=100V COUPLED PARAMETER CONDITIONS 100 nA MIN TYP MAX UNIT CTR DC Current Transfer Ratio IC/IF, note IF=1mA, VCE=2V, IB=0 2 1000 5000 % RIO Input-to-Output Isolation Resistance VIO=500V, note 1 100 Gohm VCE(SAT) Collector-Emitter Saturation Voltage IC=100mA, IF=10mA CIO Capacitance Input to Output TR Output Rise Time TF Output Rise Time fC Cut-Off Frequency Input-to-Output Isolation Voltage 1.2 V=0, f=1MHz IC=20mA, VCE=2V, RL=100ohm Note 1 0.6 V pF 130 250 s 30 1 5000 4 70 s kHz V Notes 1. Measured with input leads shorted together and output leads shorted together. 2. Current Transfer Ratio can be selected up to 15000% depending on quantity. Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date. Contents