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FAN48632 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Features Description Few External Components: 0.47 H Inductor and 0603 Case Size Input and Output Capacitors Input Voltage Range: 2.35 V to 5.5 V Maximum Pulsed Load current :of 2.0 A for GSM 217 Hz repetition rate ,boosting VOUT to 3.3 V or 3.5 V Up to 96% Efficient The FAN48632 allows systems to take advantage of new battery chemistries that can supply significant energy when the battery voltage is lower than the required voltage for system power ICs. By combining built-in power transistors, synchronous rectification, and low supply current; this IC provides a compact solution for systems using advanced Li-Ion battery chemistries. Fixed Output Voltage : 3.3 V, 3.5 V Maximum Continuous Load Current of: 1.5 A at VIN of 2.6 V True Bypass Operation when VIN > Target VOUT Internal Synchronous Rectifier Soft-Start with True Load Disconnect Forced Bypass Mode VSEL Control to Optimize Target VOUT The FAN48632 is a boost regulator designed to provide a minimum output voltage (VOUT(MIN)) from a single-cell Li-Ion battery, even when the battery voltage is below system minimum. In boost mode, output voltage regulation is guaranteed to a maximum load current of 1.5 A continuous and 2.0 A pulsed. Quiescent current in Shutdown Mode is less than 3 A, which maximizes battery life. The regulator transitions smoothly between Bypass and normal Boost Mode. The device can be forced into Bypass Mode to reduce quiescent current. The FAN48632 is available in a 16-bump, 0.4 mm pitch, Wafer-Level Chip-Scale Package (WLCSP). Short-Circuit Protection Low Operating Quiescent Current VIN Battery Applications Boost for Low-Voltage Li-ion Batteries, Brownout Prevention, Supply GSM RF PA. Cell Phones, Smart Phones, Tablets COUT 10F 40F SW 0.47H VOUT CIN L1 16-Bump, 0.4 mm Pitch WLCSP + FAN48632 VSEL SYSTEM LOAD PGND AGND EN PG BYP Figure 1. Typical Application Ordering Information Part Number FAN48632UC33X Output Voltage VSEL0 / VSEL1 Soft-Start Forced Operating Bypass Temperature 3.30 / 3.49 FAST Low IQ FAN48632BUC33X 3.30 / 3.49 FAST Low IQ FAN48632UC35X 3.50 / 3.70 FAST Low IQ (1) -40C to 85C Package Packing 16-Ball, 4x4 Array, 0.4 mm Pitch, 250 m Ball, Wafer-Level Chip-Scale Package (WLCSP) Tape and Reel Note: 1. The FAN48632BUC33X includes backside lamination. (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply April 2014 Q3B Q3A VIN CIN Q3 L1 BYPASS CONTROL Q1B Q1A SW VOUT Q2 COUT Q1 Synchronous Rectifier Control GND VSEL EN MODULATOR LOGIC AND CONTROL BYP PG Figure 2. Block Diagram Table 1. Recommended Components Component Description Vendor Parameter Typ. Unit 0.47 H 0.47 H, 30% Toko: DFE201612C DFR201612C Cyntec: PIFE20161B L L1 DCR (Series R) 40 m CIN 10 F, 10%, 10 V, X5R, 0603 TDK: C1608X5R1A106K C 10 F COUT 2 x 22 F, 20%, 6.3 V, X5R, 0603 TDK: C1608X5R0J226M C 44 F (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com 2 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Typical Application EN PG A1 A2 VIN VSEL AGND B1 B2 A2 A1 B3 B4 B4 B3 B2 B1 C4 C4 C3 C2 C1 D4 D4 D3 D2 D1 SW C2 AGND D1 A3 VOUT BYP C1 A4 A4 A3 C3 PGND D2 D3 Figure 3. Top Through View (Bumps Down) Figure 4. Bottom View (Bumps Up) Pin Definitions Pin # Name Description A1 EN Enable. When this pin is HIGH, the circuit is enabled. A2 PG Power Good. This is an open-drain output. PG is actively pulled LOW if output falls out of regulation due to overload or if thermal protection threshold is exceeded. A3-A4 VIN Input Voltage. Connect to Li-Ion battery input power source. B1 VSEL Output Voltage Select. When boost is running, this pin can be used to select output voltage. B2, C2 D1 AGND Analog Ground. This is the signal ground reference for the IC. All voltage levels are measured with respect to this pin. B3-B4 VOUT Output Voltage. Place COUT as close as possible to the device. C1 BYP Bypass. This pin can be used to activate Forced Bypass Mode. When this pin is LOW, the bypass switches (Q3 and Q1) are turned on and the IC is otherwise inactive. C3-C4 SW Switching Node. Connect to inductor. D2-D4 PGND (2) (2) Power Ground. This is the power return for the IC. The COUT bypass capacitor should be returned with the shortest path possible to these pins. Note: 2. The EN pin can be tied to VIN, but it is recommended to tie EN to the 1.8 V logic voltage. (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com 3 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Pin Configuration Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol VIN VOUT Parameter VIN Input Voltage Min. Max. Unit -0.3 6.5 V 6.0 V 8.0 V 8.0 V VOUT Output Voltage SW Node DC -0.3 Transient: 10 ns, 3 MHz -1.0 Other Pins -0.3 Human Body Model per JESD22-A114 6.5 (3) 3.0 V kV ESD Electrostatic Discharge Protection Level TJ Junction Temperature -40 +150 C TSTG Storage Temperature -65 +150 C +260 C TL Charged Device Model per JESD22-C101 1.5 Lead Soldering Temperature, 10 Seconds kV Note: 3. Lesser of 6.5 V or VIN + 0.3 V. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VIN Supply Voltage 2.35 5.50 V IOUT Output Current 0 1500 mA TA Ambient Temperature -40 +85 C TJ Junction Temperature -40 +125 C Thermal Properties Junction-to-ambient thermal resistance is a function of application and board layout. This data is measured with four-layer Fairchild evaluation boards (1 oz copper on all layers). Special attention must be paid not to exceed junction temperature TJ(max) at a given ambient temperate TA. Symbol Parameter Typical JA Junction-to-Ambient Thermal Resistance 80 JB Junction-to-Board Thermal Resistance 42 (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 Unit C/W www.fairchildsemi.com 4 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Absolute Maximum Ratings Recommended operating conditions, unless otherwise noted, circuit per Figure 1, VIN = 2.35 V to VOUT, TA = -40C to 85C. Typical values are given VIN = 3.0 V and TA = 25C. Symbol IQ Parameter VIN Quiescent Current Conditions Typ. Max. Unit Bypass Mode VOUT=3.5 V, VIN=4.2 V 140 190 A Boost Mode VOUT=3.5 V, VIN=2.5 V 150 250 A Shutdown: EN=0, VIN=3.0 V 1.5 5.0 A 4 10 A Forced Bypass Mode, VIN=3.5 V Min. Low IQ VOUT to VIN Reverse Leakage VOUT=5 V, EN=0 0.2 1.0 A ILK_OUT VOUT Leakage Current VOUT=0, EN=0, VIN=4.2 V 0.1 1.0 A VUVLO Under-Voltage Lockout VIN Rising 2.20 2.35 V ILK VUVLO_HYS Under-Voltage Lockout Hysteresis 200 mV VPG(OL) PG Low IPG=5 mA 0.4 V IPG_LK PG Leakage Current VPG=5 V 1 A VIH Logic Level High EN, VSEL, BYP VIL Logic Level Low EN, VSEL, BYP 1.2 V 0.4 V Logic Control Pin Pull Downs (LOW Active) BYP, VSEL, EN 300 k Weak Current Source Pull-Down BYP, VSEL, EN 100 nA VREG Output Voltage Accuracy Target VOUT relative to GND, DC, VOUT-VIN > 100 mV VTRSP Load Transient Response 500 - 1250 mA, VIN=3.0 V tON On-Time VIN=3.0 V, VOUT=3.5 V, Load >1 A fSW Switching Frequency VIN=3.0 V, VOUT=3.5 V, Load=1 A 2.0 2.5 3.0 MHz Boost Valley Current Limit VIN=2.6 V 3.3 3.7 4.1 A Boost Valley Current Limit During SS VIN=2.6 V RLOW IPD IV_LIM IV_LIM_SS ISS_PK tSS Soft-Start Input Current Limit Soft-Start EN HIGH to Regulation -2 4 4 % % 80 ns 1.8 A LIN1 Fast 900 mA LIN2 Fast 1800 mA 600 s Fast, 50 Load VOVP Output Over-Voltage Protection Threshold 6.0 VOVP_HYS Output Over-Voltage Protection Hysteresis 300 RDS(ON)N N-Channel Boost Switch RDS(ON) VIN=3.5 V 85 120 m RDS(ON)P P-Channel Sync Rectifier RDS(ON) VIN=3.5 V 65 85 m RDS(ONBYP P-Channel Bypass Switch RDS(ON) VIN=3.5 V 65 85 m 6.3 V mV T120A T120 Activation Threshold 120 C T120R T120 Release Threshold 100 C T150T T150 Threshold 150 C T150H T150 Hysteresis 20 C tRST FAULT Restart Timer 20 ms (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com 5 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Electrical Specifications 100% 100% 95% 95% 90% 90% Efficiency Efficiency Unless otherwise specified; VIN = 3.0 V,VOUT = 3.5 V, VSEL=0 V,and TA = 25C; circuit and components according to Figure 1. 85% 2.5 VIN 80% 85% 80% 2.7 VIN - 40C 3.0 VIN 75% 75% +25C 3.3 VIN +85C 3.0 VIN, VSEL1 Pulse Load only Pulse Load only 70% 70% 0 500 1000 1500 2000 0 500 Load Current (mA) 2000 Figure 6. Efficiency vs. Load Current and Temperature 100% 95% 95% 90% 90% Efficiency 100% 85% 80% 85% 80% 2.5 VIN - 40C 2.7 VIN 75% +25C 75% 3.0 VIN +85C 3.0 VIN, VSEL1 Pulse Load only Pulse Load only 70% 70% 0 500 1000 1500 2000 0 500 Load Current (mA) 1000 1500 2000 Load Current (mA) Figure 7. Efficiency vs. Load Current and Input Voltage, VOUT=3.3 V Figure 8. Efficiency vs. Load Current and Temperature, VOUT=3.3 V 3 3 2.5 VIN - 40C 2.7 VIN +25C 3.0 VIN +85C 2 Output Regulation (%) 2 3.3 VIN Output Regulation (%) 1500 Load Current (mA) Figure 5. Efficiency vs. Load Current and Input Voltage Efficiency 1000 1 0 -1 1 0 -1 Pulse Load only Pulse Load only -2 -2 0 500 1000 1500 2000 0 Load Current (mA) 1000 1500 2000 Load Current (mA) Figure 9. Output Regulation vs. Load Current and Input Voltage (Normalized to 3.0 VIN, 500 mA Load) (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 500 Figure 10. Output Regulation vs. Load Current and Temperature (Normalized to 3.0 VIN, 500 mA Load, TA=25C) www.fairchildsemi.com 6 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Typical Characteristics Unless otherwise specified; VIN = 3.0 V, VOUT = 3.5 V, VSEL=0 V, and TA = 25C; circuit and components according to Figure 1. 200 10 - 40C - 40C +25C +25C 8 +85C Input Current (A) Input Current (A) 180 160 140 120 +85C 6 4 2 100 0 2.0 2.5 3.0 3.5 4.0 4.5 2.0 2.5 3.0 Input Voltage (V) 3.5 4.0 4.5 Input Voltage (V) Figure 12. Quiescent Current vs. Input Voltage, Temperature, Forced Bypass (Low IQ) Figure 11. Quiescent Current vs. Input Voltage and Temperature, Auto Bypass 60 3500 2.5 VIN 2.7 VIN 50 3000 Switching Frequency (KHz) Output Ripple (mVpp) 3.0 VIN 3.3 VIN 40 30 20 10 2500 2000 1500 2.5 VIN 1000 2.7 VIN 500 3.0 VIN 3.3 VIN Pulse Load only 0 Pulse Load only 0 0 500 1000 1500 2000 0 Load Current (mA) 500 1000 1500 2000 Load Current (mA) Figure 13. Output Ripple vs. Load Current and Input Voltage Figure 14. Switching Frequency vs. Load Current and Input Voltage Figure 15. Startup, 50 Load Figure 16. Overload Protection (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com 7 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Typical Characteristics (Continued) Unless otherwise specified; VIN = 3.0 V, VOUT = 3.5 V, VSEL=0 V, and TA = 25C; circuit and components according to Figure 1. Figure 17. Load Transient, 100-500 mA, 100 ns Edge Figure 18. Transient Overload, 1.0-2.5 A, 100 ns Edge Figure 19. Line Transient, 3.0-3.6 VIN, 10 s Edge, 1.0 A Load Figure 20. Line Transient, 3.3-3.9 VIN, 10 s Edge, 1.0 A Load Figure. 21 Bypass Entry / Exit, Slow VIN Ramp 1 ms Edge, 500 mA Load, 3.2 - 3.8 VIN Figure 22. VSEL Step, VIN=3.0 V, 500 mA Load (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com 8 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Typical Characteristics (Continued) FAN48632 is a synchronous boost regulator, typically operating at 2.5 MHz in Continuous Conduction Mode (CCM), which occurs at moderate to heavy load current and low VIN voltages. The regulator includes a Bypass Mode that activates when VIN is above the boost regulator's set point. In LIN2 Mode, the current source is incremented to 2 A. If VOUT fails to reach VIN-300 mV after 1024 s, a fault condition is declared. SS State Upon the successful completion of the LIN state (VOUT>VIN300 mV), the regulator begins switching with boost pulses current limited to 50% of nominal level. In anticipation of a heavy load transition, the set point can be adjusted upward by fixed amounts with the VSEL pin to reduce the required system headroom during lighter-load operation to save power. Table 2. During SS state, VOUT is ramped up by stepping the internal reference. If VOUT fails to reach regulation during the SS ramp sequence for more than 64 s, a fault condition is declared. If large COUT is used, the reference is automatically stepped slower to avoid excessive input current draw. Operating States Mode Description Invoked When LIN Linear Startup VIN > VOUT SS Boost Soft-Start VOUT < VOUT(MIN) This is a normal operating state of the regulator. BST Boost Operating Mode VOUT = VOUT(MIN) BPS State BPS True Bypass Mode VIN > VOUT(MIN) BST State If VIN is above VREG when the SS Mode successfully completes, the device transitions directly to BPS Mode. Boost Mode The FAN48632 uses a current-mode modulator to achieve excellent transient response and smooth transitions between CCM and Discontinuous Conduction Mode (DCM) operation. During CCM operation, the device maintains a switching frequency of about 2.5 MHz. In light-load operation (DCM), frequency is reduced to maintain high efficiency. Table 3. FAULT State The regulator enters the FAULT state under any of the following conditions: Boost Startup Sequence Start State Entry Exit LIN1 VIN > UVLO, EN=1 VOUT > VIN300 mV End State SS LIN1 Exit LIN1 or LIN2 Exit VOUT > VIN300 mV SS TIMEOUT FAULT VOUT=VOUT(MIN) BST OVERLOAD TIMEOUT FAULT VOUT fails to achieve the voltage required to advance from LIN state to SS state. VOUT fails to achieve the voltage required to advance from SS state to BST state. Boost current limit triggers for 2 ms during the BST state. VDS protection threshold is exceeded during BPS state. Once a fault is triggered, the regulator stops switching and presents a high-impedance path between VIN and VOUT. After waiting 20 ms, a restart is attempted. SS LIN2 LIN2 Timeout (s) 512 1024 Power Good Power good is 0 FAULT, 1 POWER GOOD, open-drain input. The Power good pin is provided for signaling the system when the regulator has successfully completed soft-start and no faults have occurred. Power good also functions as an early warning flag for high die temperature and overload conditions. 64 Shutdown and Startup PG is released HIGH when the soft-start sequence is successfully completed. PG is pulled LOW when PMOS current limit has triggered for 64 s OR the die the temperature exceeds 120C. PG is re-asserted when the device cools below to 100C. LIN State Any FAULT condition causes PG to be de-asserted. When EN is HIGH and VIN > UVLO, the regulator attempts to bring VOUT within 300 mV of VIN using the internal fixed current source from VIN (Q3). The current is limited to LIN1 set point. Over-Temperature If EN is LOW, all bias circuits are off and the regulator is in Shutdown Mode. During shutdown, current flow is prevented from VIN to VOUT, as well as reverse flow from VOUT to VIN. During startup, it is recommended to keep DC current draw below 500 mA. The regulator shuts down when the die temperature exceeds 150C. Restart occurs when the IC has cooled by approximately 20C. If VOUT reaches VIN-300 mV during LIN1 Mode, the SS state is initiated. Otherwise, LIN1 times out after 512 s and LIN2 Mode is entered. (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com 9 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Circuit Description Forced Bypass In normal operation, the device automatically transitions from Boost Mode to Bypass Mode, if VIN goes above target VOUT. In Bypass Mode, the device fully enhances both Q1 and Q3 to provide a very low impedance path from VIN to VOUT. Entry to the Bypass Mode is triggered by condition where VIN > VOUT and no switching has occurred during past 5 s. To soften the entry to Bypass Mode, Q3 is driven as a linear current source for the first 5 s. Bypass Mode exit is triggered when VOUT reaches the target VOUT voltage. During Automatic Bypass Mode, the device is short-circuit protected by voltage comparator tracking the voltage drop from VIN to VOUT; if the drop exceeds 200 mV, a FAULT is declared. Entry to Forced Bypass Mode initiates with a current limit on Q3 and then proceeds to a true bypass state. To prevent reverse current to the battery, the device waits until output discharges below VIN before entering Forced Bypass Mode. Low-IQ Forced Bypass Mode is available for the FAN48632. After the transition is complete, most of the internal circuitry is disabled to minimize quiescent current draw. OCP, UVLO, output OVP and over-temperature protections are inactive in Forced Bypass Mode. In Forced Bypass Mode, VOUT can follow VIN below VOUT(MIN). VSEL With sufficient load to enforce CCM operation, the Bypass Mode to Boost Mode transition occurs at the target VOUT. The corresponding input voltage at the transition point is: VIN VOUT I LOAD ( DCRL RDS (ON ) P ) || RDS (ON ) BYP VSEL can be asserted in anticipation of a positive load transient. Raising VSEL increases VOUT(MIN) by a fixed amount and VOUT is stepped to the corresponding target output voltage in 20 s. The functionality can also be utilized to mitigate undershoot during severe line transients, while minimizing VOUT during more benign operating conditions to save power. EQ. 1 The Bypass Mode entry threshold has 25 mV hysteresis imposed at VOUT to prevent cycling between modes. The transition from Boost Mode to Bypass Mode occurs at the target VOUT+25 mV. The corresponding input voltage is: VIN VOUT 25mV I LOAD ( DCRL RDS (ON ) P ) (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 EQ. 2 www.fairchildsemi.com 10 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Bypass Operation Output Capacitance (COUT) 2.0 A Pulsed Loads for GSM Applications Stability The FAN48632 can support 2 A load pulses for GSM and GSM Edge applications, according to the minimum VIN levels shown in Figure 23. The effective capacitance (CEFF) of small, high-value, ceramic capacitors decreases as bias voltage increases. FAN48632 is guaranteed for stable operation with the minimum value of CEFF (CEFF(MIN)) of 14 F. CEFF varies with manufacturer, material, and case size. Inductor Selection The recommended nominal inductance value is 0.47 H. FAN48632 employs valley-current limiting; peak inductor current can exceed4.4 A for a short duration during overload conditions. Saturation effects cause the inductor current ripple to become higher under high loading as only valley of the inductor current ripple is controlled.. Startup Input current limiting is in effect during soft-start, which limits the current available to charge COUT and any additional capacitance on the VOUT line. If the output fails to achieve regulation within the limits described in the Startup section, a FAULT occurs, causing the circuit to shut down then restart after a significant time period. If the total combined output capacitance is very high, the circuit may not start on the first attempt, but eventually achieves regulation if no load is present. If a high-current load and high capacitance are both present during soft-start, the circuit may fail to achieve regulation and continually attempts soft-start, only to have the output capacitance discharged by the load when in a FAULT state. Figure 23. Minimum VIN for 2 A GSM Pulse, 3.5 VOUT Results shown use circuit/components of Figure 1 with device mounted on standard evaluation platform (layout Figure 24). Layout Recommendation Output Voltage Ripple To minimize spikes at VOUT, COUT must be placed as close as possible to PGND and VOUT, as shown in Figure 24. The associated PGND and VOUT routes are best made directly on the top copper layer, rather than thru vias. Output voltage ripple is inversely proportional to COUT. During tON, when the boost switch is on, all load current is supplied by COUT. Output ripple is calculated as: VRIPPLE ( PP ) tON I LOAD COUT For thermal reasons, it is suggested to maximize the pour area for all planes other than SW. Especially the ground pour should be set to fill all available PCB surface area and tied to internal layers with a cluster of thermal vias. EQ. 3 and V tON t SW D t SW 1 IN VOUT EQ. 4 therefore: V VRIPPLE ( P P ) tSW 1 IN VOUT I LOAD COUT EQ. 5 and t SW 1 f SW EQ. 6 As can be seen from EQ. 5, the maximum VRIPPLE occurs when VIN is at minimum and ILOAD is at maximum. (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 Figure 24. Layout Recommendation www.fairchildsemi.com 11 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Application Information 0.03 C E 2X F A B 0.40 A1 BALL A1 INDEX AREA D 0.40 (O0.21) Cu Pad (O0.30) Solder Mask Opening 0.03 C 2X RECOMMENDED LAND PATTERN (NSMD PAD TYPE) TOP VIEW 0.06 C 0.625 0.547 0.05 C C SEATING PLANE 0.3780.018 0.2080.021 E D SIDE VIEWS 0.005 NOTES A. NO JEDEC REGISTRATION APPLIES. B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCE PER ASME Y14.5M, 1994. D. DATUM C IS DEFINED BY THE SPHERICAL CROWNS OF THE BALLS. E. PACKAGE NOMINAL HEIGHT IS 586 39 MICRONS (547-625 MICRONS). F. FOR DIMENSIONS D,E,X, AND Y SEE PRODUCT DATASHEET. G. DRAWING FILNAME: MKT-UC016AF rev1 C A B O0.2600.02 16X 0.40 D C B 0.40 (Y) 0.018 A F 1 2 3 4 (X) 0.018 BOTTOM VIEW Figure 25. 16-Ball, 4x4 Array, 0.4 mm Pitch, 250 m Ball, Wafer-Level Chip-Scale Package (WLCSP) Product-Specific Dimensions D E X Y 1.780 0.030 1.780 0.030 0.290 0.290 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/UC/UC016AF.pdf For current packing container specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-UC016AF.pdf (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 www.fairchildsemi.com 12 FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply Physical Dimensions FAN48632 -- 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoostTM Regulator with Bypass Mode for GSM PA Supply 13 www.fairchildsemi.com (c) 2013 Fairchild Semiconductor Corporation FAN48632 * Rev. 1.0.3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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