Silicon RF Power Semiconductors
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RoHS Compliance ,
135-175MHz
8W
12.5V, 2 stage Amp. For PORTABLE RADIO
RA08H1317M 30 Jun 2010
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
for 12.5-volt portable radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0 @ V
DD
=12.5V, V
GG
=0V)
• P
out
>8W @ V
DD
=12.5V, V
GG
=3.5V, P
in
=20mW
• η
T
>40% @ P
out
=8W (V
GG
control), V
DD
=12.5V, P
in
=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA08H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA08H1317M-101 Antistatic tray,
50 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
PACKAGE CODE: H46S
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
DD
Drain Voltage V
GG
=0V, P
in
=0W 16 V
V
DD
Drain Voltage V
GG
<3.5V 13.2 V
V
GG
Gate Voltage V
DD
<12.5V, P
in
<20mW 4 V
P
in
Input Power 40 mW
P
out
Output Power 10 W
T
case(OP)
Operation Case Temperature Range
f=135-175MHz,
Z
G
=Z
L
=50Ω -30 to +90 °C
T
stg
Storage Temperature Range -40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL
PARAMETER CONDITIONS MIN TYP
MAX
UNIT
f Frequency Range 135 - 175 MHz
P
out
Output Power V
DD
=12.5V,V
GG
=3.5V, P
in
=20mW 8 - - W
η
T
Total Efficiency 40 - - %
2f
o
2
nd
Harmonic - - -25 dBc
ρ
in
Input VSWR - - 4.4:1 —
I
GG
Gate Current
P
out
=8W (V
GG
control),
V
DD
=12.5V,
P
in
=20mW - 1 - mA
— Stability V
DD
=5-13.2V, P
in
=10-30mW, P
out
<9W (V
GG
control),
Load VSWR=4:1 No parasitic oscillation
—
— Load VSWR Tolerance V
DD
=13.2V, P
in
=20mW, P
out
=8W (V
GG
control),
Load VSWR=20:1 No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, TOTAL EFFICIENCY, 2
nd
, 3
rd
HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
0
2
4
6
8
10
12
14
120 130 140 150 160 170 180 190
FREQUENCY f(MHz)
OUTPUT POWER P
out
(W)
INPUT VSWR ρ
in
(-)
0
20
40
60
80
100
120
140
TOTAL EFFICIENCY
η
T
(%)
V
DD
=12.5V
P
in
=20mW
P
out
@V
GG
=3.5V
η
ηη
η
T
@P
out
=8W
ρ
ρρ
ρ
in
@P
out
=8W
0
10
20
30
40
50
-15 -10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
1
2
3
4
5
DRAIN CURRENT I
DD
(A)
f=135MHz,
V
DD
=12.5V,
V
GG
=3.5V
P
out
I
DD
Gp
0
10
20
30
40
50
-15 -10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
1
2
3
4
5
DRAIN CURRENT I
DD
(A)
f=155MHz,
V
DD
=12.5V,
V
GG
=3.5V
P
out
Gp
I
DD
-70
-60
-50
-40
-30
-20
120 130 140 150 160 170 180 190
FREQUENCY f(MHz)
HARMONICS (dBc)
V
DD
=12.5V
V
GG
=3.5V
P
in
=20mW
2
nd
@P
out
=8W
3
rd
@P
out
=8W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
2
4
6
8
10
12
14
16
18
20
2 4 6 8 10 12
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
1
2
3
4
5
6
DRAIN CURRENT I
DD
(A)
P
out
f=135MHz,
V
GG
=3.5V,
P
in
=20mW
I
DD
0
10
20
30
40
50
-15 -10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
0
1
2
3
4
5
DRAIN CURRENT I
DD
(A)
f=175MHz,
V
DD
=12.5V,
V
GG
=3.5V
P
out
Gp
I
DD
0
2
4
6
8
10
12
14
16
18
20
2 4 6 8 10 12
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
1
2
3
4
5
6
DRAIN CURRENT I
DD
(A)
P
out
f=155MHz,
V
GG
=3.5V,
P
in
=20mW
I
DD
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
4/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
0
2
4
6
8
10
12
14
16
1 1.5 2 2.5 3 3.5 4
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
1
2
3
4
DRAIN CURRENT I
DD
(A)
P
out
f=135MHz,
V
DD
=12.5V,
P
in
=20mW
I
DD
0
2
4
6
8
10
12
14
16
18
20
2 4 6 8 10 12
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
1
2
3
4
5
6
DRAIN CURRENT I
DD
(A)
P
out
f=175MHz,
V
GG
=3.5V,
P
in
=20mW
I
DD
0
2
4
6
8
10
12
14
16
1 1.5 2 2.5 3 3.5 4
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
1
2
3
4
DRAIN CURRENT I
DD
(A)
P
out
f=155MHz,
V
DD
=12.5V,
P
in
=20mW
I
DD
0
2
4
6
8
10
12
14
16
1 1.5 2 2.5 3 3.5 4
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
1
2
3
4
DRAIN CURRENT I
DD
(A)
P
out
f=175MHz,
V
DD
=12.5V,
P
in
=20mW
I
DD
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
5/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE
DRAWING
(mm)
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
6/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
C1, C2
: 4700pF, 22uF in parallel
Directional
Coupler
Attenuator
Power
Meter
Spectrum
Analyzer
Signal
Generator
Attenuator
Pre-
amplifier
Power
Meter
Directional
Coupler
DUT
5
4
3
2
1
Z
G
=50
Ω
Z
L
=50
Ω
C1
C2
- +
DC Power
Supply V
GG
+ -
DC Power
Supply V
DD
TEST BLOCK DIAGRAM
Attenuator
EQUIVALENT CIRCUIT
2
3
1
5
4
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
7/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate,
and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws
or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M2.6 screws are recommended with a tightening torque of 1.8 to 3.0kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The lead (terminal) must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles
in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At P
out
=8W, V
DD
=12.5V and P
in
=20mW each stage transistor operating conditions are:
Stage
P
in
(W) P
out
(W) R
th(ch-case)
(°C/W) I
DD
@ η
T
=40%
(A) V
DD
(V)
1
st
0.02 1.5 4.0 0.3
2
nd
1.5 8.0 2.4 1.32 12.5
The channel temperatures of each stage transistor T
ch
= T
case
+ (V
DD
x I
DD
- P
out
+ P
in
) x R
th(ch-case)
are:
T
ch1
= T
case
+ (12.5V x 0.3A – 1.5W + 0.02W) x 4.0°C/W = T
case
+ 9.1 °C
T
ch2
= T
case
+ (12.5V x 1.32A – 8.0W + 1.5W) x 2.4°C/W = T
case
+ 24.0 °C
For long-term reliability, it is best to keep the module case temperature (T
case
) below 90°C. For an ambient
temperature T
air
=60°C and P
out
=8W, the required thermal resistance R
th (case-air)
= ( T
case
- T
air
) / ( (P
out
/ η
T
) - P
out
+ P
in
) of the heat sink, including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (8W/40% – 8W + 0.02W) = 2.50 °C /W
When mounting the module with the thermal resistance of 2.50 °C/W, the channel temperature of each stage
transistor is:
T
ch1
= T
air
+ 39.1 °C
T
ch2
= T
air
+ 54.0 °C
The 175°C maximum rating for the channel temperatur e ensures application under derated conditions.
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
8/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (V
GG
). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB
and only a small leakage current flows from the battery into the drain.
Around V
GG
=2.5V, the output power and drain current increases substantially.
Around V
GG
=3V (typical) to V
GG
=3.5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power P
in
. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance Z
L
=50Ω?
c) Is the source impedance Z
G
=50Ω?
Attention
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and
were not specifically designed for use in other applications. In particular, while these products are highly reliable
for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient
to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of
critical communications elements would include transmitters for base station applications and fixed station
applications that operate with long term continuous transmission and a higher on-off frequency during transmitting,
especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.)
to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than
90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA
RARA
RA08H1317
08H131708H1317
08H1317M
MM
M
RA08H1317M 30 Jun 2010
9/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
M
itsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Keep safety first in your circuit designs !
-
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semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third
party.
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or circuit application examples contained in these materials.
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algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
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or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
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system that is used under circumstances in which human life is potentially at stake. Please contact
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destination.
Notes regarding these materials
