MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE FS70VSJ-02 OUTLINE DRAWING Dimensions in mm ae 10.5MAX. . \ pT = \ = \ boo Vo ale! af Zo 3 aig 3 r pv | 7 U. I eT git 54) vane OB Ay i abt Poe Bgl H o 28a a ) GATE @4V DRIVE i 2) DRAIN W@VOSS ccc crt etn cece eee cee rene ee ene enen neers _A (3) SOURCE Vpss 100V CO 4: DRAIN erDs (ON) (MAX) tctr etter erent eee tenn eee 17mMQ I e Ip eee eee eee teeta eee eee 70A OF Integrated Fast Recovery Diode (TYP.) -::-: 115ns TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (tc = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Vas = 0V 100 v Vass Gate-source vaitage Vos = OV 220 Vv lo Drain currerit 70 A jom Drain current (Pulsed) 280 A IDA Avalanche drain current (Pulsed) | L = 1004uH 70 A is Source current 70 A ism Source currant (Pulsed) 280 A Po Maximurn power dissipation 125 WwW Toh Channel temperature 55 ~ +150 C Tstg Storage temperature -55 ~ +150 C Weight Typical value L 1.2 g 2-610 MITSUBISHI ELECTRIC ELECTRICAL CHARACTERISTICS (Tech = 25C) MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE ELECTRIC imit Symbol Parameter Test conditions Limits Unit Min. Typ. Max VBR) OSs | Drain-source breakdown voliage | ID = 1mA, VDS = OV 100 _ Vv Iass Gate leakage current VGs = +20V, VDs = OV - 40.1 HA loss Drain current Vos = 100V, Vas = OV _ _ 0.1 mA VGS (th) Gate-source threshold voltage ip = 1mA, Vos = 10V 1.0 1.5 2.0 Vv rDS{ON) | Drain-source on-state resistance | ID = 35A, Vas = 10V _ 13 17 mQ fDS(ON} | Drain-source on-state resistance | lb = 35A, Vas = 4V 14 18 moQ VDS (ON) | Drain-source on-state voltage | ID = 35A, Vas = 10V _ 0.46 0.60 Vv | yts | Forward transfer admittance _| ID = 35A, Vos = 10V 68 S Ciss Input capacitance _ 8200 = pF Coss Output capacitance Vos = 10V, Vas = OV, f = 1MHz 1150 _ pF Crss Reverse transfer capacitance _ 600 _ pF td (on) Turn-on delay time 54 _ ns ise ti _ 140 _ te Rise time _ Vo0 = SOV, ID = 35A, Ves = 10V, RGEN = Res = 500 4 ns td (off) Turn-off delay time o 830 = ns tt Fail time 350 _ ns VsD Source-drain voltage Is = 354, Vas = OV 1.0 15 Vv Rth (ch-c) | Thermal resistance Channel to case _ _ 1.00 CW tr Reverse recovery time {s = 70A, dis/dt = -100A/us _ 115 _ ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 3 2 = _ 102 tw = 10us ca 160 < 7 a 2 5 Z ~ 3 & 2 = 120 2 z cc 10) G 80 BS z 3 & e 2 = 40 Aygo Lif te = 25C Pulse a 7 5 9 50 100 150 200 35 5710 23 57101 23 5710? 23 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vos (V) QUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 0 100 To = 28C To = 25C Pulse Test Po = 125W Pulse Test x < 80 = ?asriov a 2 5V Vas = 10V AV 5 60 6v 5 30 Ld 5V wu x av cc 3 40 BQ 20 = Zz < < id 5 20 aq 10 QO 0 Q 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vps (V) MITSUBISHI 2-611 MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE ELECTRIC ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) Te = 25C 20 c= 26C Pulse T: Pulse T i we <S ze 16 oS Ee Zz Dz zo zo Oa On 12 wo w 2 O> OQ Sw So De ot zg 23 o> iy 4 a Oa oO Qo 0 2 4 6 8 10 3 57100 23 57101 23 57102 23 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Io (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 100 102 t Te = 25C o Vos = 10V ; Vbs = 2.0V i Pulse Test ~~ Puise Te = 80 i uise Test eg 2 3 ' tw 3 wn oO S 2 5 60 g- ic FE o 101 To = 25C x oC > 49 22 7 78C oO x c 1 z Sate 5 3 ae SG 20 r< 3 2 0 100 0 2 4 6 8 10 100 2 345 710! 2 345 7102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT {0 (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 2 404 Ter = 25C 7} Tech = 26C 105 Vas = OV 5 [Vo = 50V Z f = 1MHz 3} Vas = 10V ic 3 @ 2} Roen = Ras = 502 wW = 2 wu 108 ta(ott) 22 < OG 104 2 5 Ui og & Go 3 as = 2 tr a oO 3 x= og 2 fe 102 & 108 = z talon) 7 Coss a 3 . Crss 2 2 101 3 57100 23 57101 23 57102 23 100 2 345 7101 2 345 7102 DRAIN-SOURCE VOLTAGE Vops (V) DRAIN CURRENT Ip (A) MITSUBISHI DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (1C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (er) oss (tC) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE 10s (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSs (25C) 10 10! 5 4 3 2 100 my wOAMN~N 10-* 1.4 1.2 0.8 0.6 0.4 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Te = 25C ID = 70A 40 80 120 160 200 GATE CHARGE Qa (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V ip = f/elo Pulse Test -50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) ~50 0 50 100 =. 150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE = 2th (ch-} (C/W) _ 2 7 5 3 2 109 7 5 3 2 SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE Vas ith) (V) ele @ ON 2 or D= Q. nN MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 Vas = 0V i Pulse Test 80 60 40 To'= 125C 75C 20 25C 0 0.4 0.8 t2 1.6 2.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 40 Vos = 10V ID = tmA 3.2 24 1.6 0.8 50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS = a Pom LPL 0.05 | cr 0.02 p= i 0.01 Pulse On 0423 5710323 5710223 5710-123 5710023 5710123 57108 PULSE WIDTH tw (8) MITSUBISHI 2-613 ELECTRIC