1N5062GPHE3/73 - Vishay Presicion Group

Document Number: 88513 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Glass Passivated Junction Rectifier

1N5059GP thru 1N5062GP

Vishay General Semiconductor

FEATURES

• Superectifier structure for high reliability

application

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

MECHANICAL DATA

Case: DO-204AC, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

Note

(1) JEDEC registered values

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 200 V to 800 V

IFSM 50 A

IR5.0 μA

VF1.2 V

TJ max. 175 °C

DO-204AC (DO-15)

SUPERECTIFIER

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT

Maximum repetitive peak reverse voltage VRRM (1) 200 400 600 800 V

Maximum RMS voltage VRMS 140 280 420 560 V

Maximum DC blocking voltage VDC (1) 200 400 600 800 V

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 75 °C IF(AV) (1) 1.0 A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load IFSM (1) 50 A

Maximum full load reverse current, full cycle

average 0.375" (9.5 mm) lead length at

TA = 25 °C

IR(AV) (1) 5.0

μA

TA = 75 °C 150

Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88513

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

1N5059GP thru 1N5062GP

Vishay General Semiconductor

Note

(1) JEDEC registered values

Note

(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT

Max. instantaneous forward voltage 1.0 A TA = 75 °C VF (1) 1.2 V

Maximum DC reverse current at rated

DC blocking voltage

TA = 25 °C

IR (1) 5.0

μA

TA = 175 °C 300

Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 2.0 μs

Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT

Typical thermal resistance

RJA (1) 45

°C/W

RJL (1) 20

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

1N5061GP-E3/54 0.425 54 4000 13" diameter paper tape and reel

1N5061GP-E3/73 0.425 73 2000 Ammo pack packaging

1N5061GPHE3/54 (1) 0.425 54 4000 13" diameter paper tape and reel

1N5061GPHE3/73 (1) 0.425 73 2000 Ammo pack packaging

25 50 75 100 125 150 175 200

0.2

0.4

0.6

0.8

1.0

Average Forward Rectied Current (A)

Ambient Temperature (°C)

60 Hz

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

1 10 100

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

= 100 °C

8.3 ms Single Half Sine-Wave

(JEDEC Method)

Document Number: 88513 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

1N5059GP thru 1N5062GP

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.1

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

= 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

0.01

0.1

60 80 10020 40

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (μA)

TJ = 125 °C

TJ = 25 °C

TJ = 75 °C

100

Reverse Voltage (V)

110

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

Junction Capacitance (pF)

0.01 0.1 101 100

0.1

100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

DO-204AC (DO-15)

0.034 (0.86)

0.028 (0.71)

DIA.

0.140 (3.6)

0.104 (2.6)

DIA.

1.0 (25.4)

MIN.

0.300 (7.6)

0.230 (5.8)

1.0 (25.4)

MIN.

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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