APTC90H12T2G Full - Bridge Super Junction MOSFET Power Module VDSS = 900V RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features CoolMOSTM - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration Pins 5/6/15/16 ; 3/4/17/18 ; 9/10 ; 11/12 must be shorted together Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant All ratings @ Tj = 25C unless otherwise specified Absolute maximum ratings (per CoolMOSTM) IDM VGS RDSon PD IAR EAR EAS Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 900 30 23 75 20 120 250 8.8 2.9 1940 Unit V A October, 2012 ID Parameter Drain - Source Breakdown Voltage V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC90H12T2G - Rev1 Symbol VDSS APTC90H12T2G Electrical Characteristics (per CoolMOSTM) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Min Typ 2.5 500 100 3 Tj = 25C Tj = 125C VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V Max 100 Unit 120 3.5 100 m V nA Max Unit A Dynamic Characteristics (per CoolMOSTM) Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eoff Turn-off Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min nF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 70 Inductive Switching (125C) VGS = 10V VBus = 600V ID = 26A RG = 7.5 Inductive switching VGS = 10V; ID = 26A VBus = 600V; RG = 7.5 Typ 6.8 0.33 20 ns 400 25 Tj = 25C 0.75 mJ Tj = 125C 0.85 mJ 0.5 C/W Max 30 23 1.2 Unit Source - Drain diode ratings and characteristics (per CoolMOSTM) Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Tc = 25C Tc = 80C VGS = 0V, IS = - 26A IS = - 26A Tj = 25C VR = 400V Tj = 25C diS/dt = 200A/s 0.8 A V 920 ns 30 C October, 2012 trr Test Conditions www.microsemi.com 2-6 APTC90H12T2G - Rev1 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage APTC90H12T2G Temperature sensor NTC Symbol R25 R25/R25 B/B B 25/100 Characteristic Resistance @ 25C Resistance tolerance Beta tolerance T25 = 298.16 K RT Min Typ 22 Max 5 3 3980 Unit k % K R25 1 1 exp B25 / 100 T25 T T: Thermistor temperature RT: Thermistor value at T Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2 Typ Max 150 125 100 3 75 Unit V C N.m g www.microsemi.com 3-6 APTC90H12T2G - Rev1 October, 2012 Package outline (dimensions in mm) APTC90H12T2G Typical performance Curve (per CoolMOSTM) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.6 0.5 D = 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 925 900 25 limited by RDSon 75 100 125 10 10 ms Single pulse TJ=150C TC=25C 25 20 15 10 5 0.1 0 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 1000 Coss 100 10 Crss 1 0 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 50 75 100 125 TC, Case Temperature (C) 10 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com VDS=400V ID=26A TJ=25C 8 October, 2012 1 C, Capacitance (pF) 50 30 ID, DC Drain Current (A) ID, Drain Current (A) 950 DC Drain Current vs Case Temperature 35 100 s 1 975 TJ, Junction Temperature (C) 1000 100 1000 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 4-6 APTC90H12T2G - Rev1 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APTC90H12T2G 200 ZVS 150 100 VDS=600V D=50% RG=7.5 TJ=125C TC=75C 50 0 10 15 20 25 ID, Drain Current (A) 30 Switching Energy (mJ) 2.0 1.5 1.0 0.5 25 50 75 100 125 150 TJ, Junction Temperature (C) 1.0 0.5 0.0 2.5 Eoff 2 1.5 VDS=600V ID=26A TJ=125C L=100H 1 0.5 10 15 20 25 30 ID, Drain Current (A) 35 40 5 10 15 20 25 30 35 Gate Resistance (Ohms) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". www.microsemi.com 5-6 October, 2012 5 APTC90H12T2G - Rev1 Eoff (mJ) 2.5 3 VDS=600V RG=7.5 TJ=125C L=100H 1.5 3.0 Switching Energy vs Gate Resistance Switching Energy vs Current 2.0 ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) Frequency (kHz) Operating Frequency vs Drain Current 250 APTC90H12T2G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. 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