APTC90H12T2G
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Pins 5/6/15/16 ; 3/4/17/18 ; 9/10 ; 11/12 must be
shorted together
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings (per CoolMOS™)
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 900 V
Tc = 25°C 30
ID Continuous Drain Current Tc = 80°C 23
IDM Pulsed Drain current 75
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 120 m
PD Maximum Power Dissipation Tc = 25°C 250 W
IAR Avalanche current (repetitive and non repetitive) 8.8 A
EAR Repetitive Avalanche Energy 2.9
EAS Single Pulse Avalanche Energy 1940 mJ
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Full - Bridge
Super Junction MOSFET
Power Module
VDSS = 900V
RDSon = 120m max @ Tj = 25°C
ID = 30A @ Tc = 25°C
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Electrical Characteristics (per CoolMOS™)
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 900V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 26A 100 120 m
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.5 3 3.5 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA
Dynamic Characteristics (per CoolMOS™)
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 6.8
Coss Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz 0.33 nF
Qg Total gate Charge 270
Qgs Gate – Source Charge 32
Qgd Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A 115
nC
Td(on) Turn-on Delay Time 70
Tr Rise Time 20
Td(off) Turn-off Delay Time 400
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5 25
ns
Eoff Turn-off Switching Energy Tj = 25°C 0.75 mJ
Eoff Turn-off Switching Energy
Inductive switching
VGS = 10V; ID = 26A
VBus = 600V; RG = 7.5 Tj = 125°C 0.85 mJ
RthJC Junction to Case Thermal Resistance 0.5 °C/W
Source - Drain diode ratings and characteristics (per CoolMOS™)
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 30
IS Continuous Source current
(Body diode)
Tc = 80°C 23
A
VSD Diode Forward Voltage VGS = 0V, IS = - 26A 0.8 1.2 V
trr Reverse Recovery Time Tj = 25°C 920 ns
Qrr Reverse Recovery Charge
IS = - 26A
VR = 400V
diS/dt = 200A/µs Tj = 25°C 30 µC
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Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 22
k
R25/R25 Resistance tolerance 5
B/B Beta tolerance 3
%
B 25/100 T
25 = 298.16 K 3980 K
TT
B
R
RT
11
exp
25
100/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 75 g
Package outline (dimensions in mm)
T: Thermistor temperature
RT: Thermistor value at T
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Typical performance Curve (per CoolMOS™)
D = 0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
40
80
120
0 5 10 15 20
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Low Voltage Output Characteristics
V
GS
=20, 8V
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
900
925
950
975
1000
25 50 75 100 125
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage
Maximum Safe Operating Area
10 ms
100 µs
0.1
1
10
100
1000
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
limited b
y
R
DS
on
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0 25 50 75 100 125 150 175 200
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0 50 100 150 200 250 300
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
V
DS
=400V
I
D
=26A
T
J
=25°C
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ZVS
0
50
100
150
200
250
10 15 20 25 30
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=600V
D=50%
RG=7.5Ω
TJ=125°C
TC=75°C
Switching Energy vs Current
0.0
0.5
1.0
1.5
2.0
5 10152025303540
ID, Drain Current (A)
Eoff (mJ)
VDS=600V
RG=7.5Ω
TJ=125°C
L=100µH
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
Switching Energy vs Gate Resistance
Eoff
0.5
1
1.5
2
2.5
3
5 101520253035
Gate Resistance (Ohms)
Switching Energy (mJ)
VDS=600V
ID=26A
TJ=125°C
L=100µH
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APTC90H12T2G
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