© Semiconductor Components Industries, LLC, 2013
October, 2017 Rev. 5
1Publication Order Number:
UESD3.3DT5G/D
mESD3.3DT5G SERIES
ESD Protection Diodes
Ultra Small SOT723 Package
The mESD Series is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast response
time, make these parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is suited for use in
cellular phones, portable devices, digital cameras, power supplies and
many other portable applications.
Specification Features:
Small Body Outline Dimensions:
0.047 x 0.032(1.20 mm x 0.80 mm)
Low Body Height: 0.020 (0.5 mm)
Standoff Voltage: 3.3 V 6.0 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC6100042 Level 4 ESD Protection
IEC6100044 Level 4 EFT Protection
AECQ101 Qualified and PPAP Capable
These are PbFree Devices
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 6100042 (ESD) Air
Contact
±30
±30
kV
IEC 6100044 (EFT) 40 A
ESD Voltage Per Human Body Model
Per Machine Model
16
400
kV
V
Total Power Dissipation on FR5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance JunctiontoAmbient
PD
RqJA
240
1.9
525
mW
mW/°C
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to
+150
°C
Lead Solder Temperature Maximum
(10 Second Duration)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.62 in.
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
Device Package Shipping
ORDERING INFORMATION
UESDxxDT5G SOT723 8000/Tape & Reel
MARKING
DIAGRAM
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
SOT723
CASE 631AA
STYLE 4
3
2
1
xx = Device Code
M = Date Code
xx M
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
mESD3.3DT5G SERIES
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CMax. Capacitance @VR = 0 and f = 1 MHz
UniDirectional
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
VRWM (V) IR (mA) @ VRWM
VBR (V) @ IT
(Note 2) ITC (pF)
Max Max Min mA Typ
UESD3.3DT5G L0 3.3 1.0 5.0 1.0 47
UESD5.0DT5G L2 5.0 0.1 6.2 1.0 38
UESD6.0DT5G L3 6.0 0.1 7.0 1.0 34
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
mESD3.3DT5G SERIES
www.onsemi.com
3
TYPICAL CHARACTERISTICS
55 + 25
7.4
Figure 1. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (°C)
+ 150
7.2
7.1
7.0
6.9
6.8
6.3 55
20
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+25
16
12
8
4
0
BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ)
IR (nA)
7.3
+ 150
6.7
6.6
6.5
6.4
18
14
10
6
2
mESDxxDT5G
mESDxxDT5G
Figure 3. Typical Capacitance versus Bias Voltage
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (°C)
FR5 BOARD
PD, POWER DISSIPATION (mW)
0
5
10
15
20
25
30
35
40
45
012345
BIAS VOLTAGE (V)
CAPACITANCE (pF)
mESDxxDT5G
Figure 5. Positive 8 kV contact per IEC 610042
mESD5.0DT5G
Figure 6. Negative 8 kV contact per IEC 6100042
mESD5.0DT5G
mESD3.3DT5G SERIES
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4
PACKAGE DIMENSIONS
SOT723
CASE 631AA
ISSUE D
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
Y
X
X0.08 Y
2X
E
12
3
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
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UESD3.3DT5G/D
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