TIC225 SERIES SILICON TRIACS Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer MT1 1 400 V to 800 V Off-State Voltage MT2 2 Max IGT of 5 mA (Quadrant 1) G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC225D TIC225M Repetitive peak off-state voltage (see Note 1) TIC225S 600 VDRM V 700 TIC225N Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2) UNIT 400 800 IT(RMS) 8 A Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) ITSM 70 A Peak gate current IGM 1 A Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) PGM 2.2 W Average gate power dissipation at (or below) 85C case temperature (see Note 4) PG(AV) 0.9 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 200 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT TEST CONDITIONS Repetitive peak off-state current MIN VD = rated VDRM IG = 0 TC = 110C TYP MAX UNIT 2 mA Vsupply = +12 V RL = 10 tp(g) > 20 s 2.3 5 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -3.8 -20 current Vsupply = -12 V RL = 10 tp(g) > 20 s -3 -10 Vsupply = -12 V RL = 10 tp(g) > 20 s 6 30 mA All voltages are with respect to Main Terminal 1. JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC225 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER VGT VT TYP MAX Vsupply = +12 V RL = 10 tp(g) > 20 s 0.7 2 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -0.7 -2 voltage Vsupply = -12 V RL = 10 tp(g) > 20 s -0.7 -2 On-state voltage IH Holding current IL Latching current dv/dt dv/dt(c) Critical rate of rise of off-state voltage Critical rise of commutation voltage TEST CONDITIONS MIN V Vsupply = -12 V RL = 10 tp(g) > 20 s 0.8 2 IT = 12 A IG = 50 mA (see Note 5) 1.5 2.1 Vsupply = +12 V IG = 0 Init' IT = 100 mA 2.3 20 Vsupply = -12 V IG = 0 Init' IT = -100 mA -1.6 -20 Vsupply = +12 V Vsupply = -12 V 30 (see Note 6) VDRM = Rated VDRM IG = 0 VDRM = Rated VDRM ITRM = 12 A -30 TC = 110C TC = 70C 1 UNIT V mA mA 20 V/s 4.5 V/s (see Figure 6) All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 2.5 C/W 62.5 C/W JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC225 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC07AA 1000 100 + + - Vsupply IGTM VAA = 12 V + + RL = 10 tp(g) = 20 s VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA Vsupply IGTM 10 1 0*1 -60 -40 -20 0 20 40 60 80 100 + - - + VAA = 12 V } RL = 10 tp(g) = 20 s 1 0*1 -60 120 + + - -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE 100 CASE TEMPERATURE TC07AD 1000 Vsupply Vsupply IGTM + - + + - + + 0 20 IL - Latching Current - mA IH - Holding Current - mA TC07AB 10 10 1 100 TC07AE VAA = 12 V 10 1 VAA = 12 V IG = 0 Initiating ITM = 100 mA 0*1 -60 -40 -20 0 20 40 60 80 100 TC - Case Temperature - C Figure 3. JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 120 0.1 -60 -40 -20 40 60 80 100 120 TC - Case Temperature - C Figure 4. 3 TIC225 SERIES SILICON TRIACS THERMAL INFORMATION MAXIMUM RMS ON-STATE CURRENT vs CASE TEMPERATURE TI07AB IT(Rms) - Maximum On-State Current - A 10 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. PARAMETER MEASUREMENT INFORMATION VAC VAC L1 ITRM IMT2 IMT2 C1 50 Hz VMT2 VDRM DUT RG See Note A R1 VMT2 10% IG dv/dt 63% IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 s. PMC2AA Figure 6. 4 JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.