©2000 Integrated Device Technology, Inc.
JANUARY 2001
DSC 3741/7
1
HIGH-SPEED 3.3V
1K X 8 DUAL-PORT
STATIC RAM
IDT71V30S/L
Features
◆High-speed access
– Commercial: 25/35/55ns (max.)
◆Low-power operation
– IDT71V30S
—Active: 375mW (typ.)
—Standby: 5mW (typ.)
– IDT71V30L
—Active: 375mW (typ.)
—Standby: 1mW (typ.)
Functional Block Diagram
NOTES:
1. IDT71V30: BUSY outputs are non-tristatable push-pulls.
2. INT outputs are non-tristable push-pull output structure.
◆On-chip port arbitration logic
◆Interrupt flags for port-to-port communication
◆Fully asynchronous operation from either port
◆Battery backup operation, 2V data retention (L Only)
◆TTL-compatible, single 3.3V ±0.3V power supply
◆Industrial temperature range (-40OC to +85OC) is available
for selected speeds
I/O
Control
Address
Decoder MEMORY
ARRAY
ARBITRATION
and
INTERRUPT
LOGIC
Address
Decoder
I/O
Control
R/WL
CEL
OEL
BUSYL
A9L
A0L
3741 drw 01
I/O0L-I/O
7L
CEL
OEL
R/WL
INTL
BUSYR
I/O0R-I/O7R
A9R
A0R
INTR
CER
OER
(2)
(1) (1)
(2)
R/WR
CER
OER
10
10
R/WR
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
2
NOTES:
1. All VCC pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. Package body is approximately 10mm x 10mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate the orientation of the actual part-marking.
Pin Configurations(1,2,3)
Description
The IDT71V30 is a high-speed 1K x 8 Dual-Port Static RAM. The
IDT71V30 is designed to be used as a stand-alone 8-bit Dual-Port
SRAM.
Both devices provide two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access
for reads or writes to any location in memory. An automatic power
down feature, controlled by CE, permits the on chip circuitry of each
port to enter a very low standby power mode.
Fabricated using IDT's CMOS high-performance technology, these
devices typically operate on only 375mW of power. Low-power (L)
versions offer battery backup data retention capability, with each Dual-
Port typically consuming 200µW from a 2V battery.
The IDT71V30 devices are packaged in 64-pin STQFPs.
INDEX
IDT71V30TF
PP64-1(4)
64-Pin STQFP
Top View(5)
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
46
45
44
43
42
41
40
39
38
37
36
35
34
47
48
33
17
18
19
20
32
31
30
29
28
27
26
25
24
23
22
21
49
50
51
52
63
62
61
60
59
58
57
56
55
54
53
64
I/O6R
N/C
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
A9R
I/O7R
OER
N/C
N/C
I/O2L
A0L
OEL
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
N/C
N/C
3741 drw 03
N/C
N/C
N/C
INTL
BUSYL
R/WL
CEL
VCC
VCC
CER
R/WR
BUSYR
INTR
N/C
N/C
N/C
I/O3L
N/C
I/O4L
I/O5L
I/O6L
I/O7L
N/C
GND
GND
I/O0R
I/O1R
I/O2R
I/O3R
N/C
I/O4R
I/O5R
,
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
3
Absolute Maximum Ratings(1) Recommended
DC Operating Conditions
Maximum Operating
Temperature and Supply Voltage(1,2)
DC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (VCC = 3.3V ± 0.3V)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V.
NOTE:
1. VIL (min.) = -1.5V for pulse width less than 20ns.
NOTE:
1. At Vcc < 2.0V input leakages are undefined. Supply CurrentVIN > VCC -0.2V or < 0.2V
Capacitance(1) (TA = + 25OC, f=1.0MHz)
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dv references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers,
contact your sales office.
Symbol Rating Com'l & Ind Unit
VTERM(2) Terminal Vo ltage
with Re s p e ct to GND -0.5 to +4.60 V
TBIAS Temperature
Und e r Bias -55 to +125 oC
TSTG Storage
Temperature -65 to +150 oC
IOUT DC Output
Current 50 mA
3741 tbl 01
Symbol Parameter Min. Typ. Max. Unit
VCC Supp ly Voltag e 3.0 3.3 3.6 V
GND Ground 0 0 0 V
VIH Inp ut Hig h Vo ltag e 2. 0 ____ VCC+0.3V V
VIL Input Lo w Voltag e -0.3(1) ____ 0.8 V
3 7 41 t b l 02
Grade Ambient
Temperature GND Vcc
Commercial 0OC to +70OC0V 3.3V
+ 0.3
Industrial -40OC to +85OC0V 3.3V
+ 0.3
3741 tbl 03
Symbol Parameter Conditions(2) Max. Unit
CIN Inp ut Cap ac itanc e VIN = 3dV 9 pF
COUT Output
Capacitance VOUT = 3dV 10 pF
3741 tbl 04
Symbol Parameter Test Conditions
71V30S 71V30L
UnitMin. Max. Min. Max.
|ILI| Input Leakag e
Current(1) VCC = 3.6V,
VIN = 0V to VCC
___ 10 ___ 5µA
|ILO| Outp ut Le ak age
Current CE
= VIH,
VOUT = 0V to VCC
___ 10 ___ 5µA
VOL Outp ut Lo w Voltag e
(I/O0-I/O7)IOL = 4mA ___ 0.4 ___ 0.4 V
VOH Outp ut Hig h Voltage IOH = -4mA 2.4 ___ 2.4 ___ V
3741 tbl 05
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
4
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization but not production tested.
Data Retention Characteristics (L Version Only)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1,6,7) (VCC = 3.3V ± 0.3V)
NOTES:
1. 'X' in part number indicates power rating (S or L)
2. VCC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 70mA (Typ.)
3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6. Refer to chip enable Truth Table I.
7. Industrial temperature: for specific speeds, packages and powers contact your sales office.
Symbol Parameter Test Condition Version
71V30X25
Com'l Only 71V30X35
Com'l Only 71V30X55
Com'l Only
Unit
Typ.(2) Max. Typ.(2) Max. Typ.(2) Max.
ICC Dynamic Operating Current
(B o th P o rts Ac tiv e) CEL an d CER = VIL,
Outputs Disabled
f = fMAX(3)
COM'L S
L75
75 150
120 75
75 145
115 75
75 135
105 mA
IND S
L___
___
___
___
___
___
___
___
___
___
___
___
ISB1 Standby Current
(Bo th Po rts - TTL Le ve l
Inputs)
CEL an d CER= VIL,
f = fMAX(3) COM'L S
L20
20 50
35 20
20 50
35 20
20 50
35 mA
IND S
L___
___
___
___
___
___
___
___
___
___
___
___
ISB2 Standby Current
(On e P ort - TTL Le v e l
Inputs)
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX(3)
COM'L S
L30
30 105
75 30
30 100
70 30
30 90
60 mA
IND S
L___
___
___
___
___
___
___
___
___
___
___
___
ISB3 Full Standby Current (Both
Ports - CMOS Le ve l Inp uts) CEL and CER > VCC - 0.2V
VIN > VCC - 0. 2V o r
VIN < 0.2V , f = 0(4)
COM'L S
L1.0
0.2 5.0
3.0 1.0
0.2 5.0
3.0 1.0
0.2 5.0
3.0 mA
IND S
L___
___
___
___
___
___
___
___
___
___
___
___
ISB4 Full Standby Current
(One Po rt - CM OS
Le v e l Inp u ts)
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
VIN > VCC - 0.2V o r V IN < 0.2V
Active Port Outputs Disabled
f=fMAX(3)
COM'L S
L30
30 90
75 30
30 85
70 30
30 75
60 mA
IND S
L___
___
___
___
___
___
___
___
___
___
___
___
3741 tbl 06
Symbol Parameter Test Condition
71V30L
UnitMin. Typ.(1) Max.
VDR VCC fo r Da ta Re te n tio n 2. 0 ____ ____ V
ICCDR Data Re te ntio n Current
VCC = 2V, CE > VCC -0.2V
Ind. ____ ____ ____ µA
Com'l. ____ 100 1500
tCDR(3) Chip De s e le c t to Data Re te ntio n Tim e VIN > VCC -0.2V o r VIN < 0.2V 0 ____ ____ ns
tR(3) Operation Recove ry Time tRC(2) ____ ____ ns
3741 tbl 07
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
5
AC Test Conditions Data Retention Waveform
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. 'X' in part number indicates power rating (S or L).
4. Industrial temperature: for specific speeds, packages and power contact your sales office.
Figure 2. Output Test Load
(For tHZ, tLZ, tWZ and tOW)
* Including scope and jig.
Figure 1. AC Output Test Load
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(3,4)
Input Pulse Levels
Inp u t Ris e / Fal l Time s
Inp u t Timing Re fe re nc e Le v e ls
Outp ut Re fe re nc e Le v e ls
Output Lo ad
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1 and 2
3741 tbl 08
VCC
CE
3.0V 3.0V
DATA RETENTION MODE
tCDR
VIH VIH
VDR
VDR ≥2.0V
3741 drw 04
tR
,
590Ω
30pF
435Ω
DATA OUT
590Ω
435Ω5pF
DATA OUT
3741 drw 05
3.3V 3.3V
BUSY
INT
71V30X25
Com'l Only 71V30X35
Com'l Only 71V30X55
Com'l Only
UnitSymbol Parameter Min. Max. Min. Max. Min. Max.
RE AD CYCLE
tRC Read Cyc le Time 25 ____ 35 ____ 55 ____ ns
tAA Address Access Time ____ 25 ____ 35 ____ 55 ns
tACE Chip Enable Access Time ____ 25 ____ 35 ____ 55 ns
tAOE Outp ut Enab le Acce s s Time ____ 12 ____ 20 ____ 25 ns
tOH Output Hold from A ddre ss Change 3 ____ 3____ 3____ ns
tLZ Output Low-Z Time (1,2) 0____ 0____ 0____ ns
tHZ Output Hig h-Z Time (1,2) ____ 12 ____ 15 ____ 30 ns
tPU Chip Enable to Po wer Up Time(2) 0____ 0____ 0____ ns
tPD Chi p Disab le to Po wer Down Time (2) ____ 50 ____ 50 ____ 50 ns
3741 tbl 09
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
6
Timing Waveform of Read Cycle No. 1, Either Side(1)
NOTES:
1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW.
2. tBDD delay is required only in case where the opposite is port is completing a write operation to same the address location. For simultaneous read operations BUSY has
no relationship to valid output data.
3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.
Timing Waveform of Read Cycle No. 2, Either Side(3)
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is desserted first, OE or CE.
3. R/W = VIH and the address is valid prior to or coincidental with CE transition LOW.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, and tBDD.
ADDRESS
DATAOUT
tRC
tOH
PREVIOUS DATA VALID
tAA
tOH
DATA VALID
3741 drw 06
tBDD(2,3)
BUSYOUT
CE
tACE
tAOE
tHZ
tLZ
tPD
VALID DATA
tPU
50%
OE
DATAOUT
CURRENT
CC
I
SS
I50%
3741 drw 07
(4)
(1)
(1) (2)
(2)
(4)
tLZ
tHZ
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
7
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over voltage and
temperature, the actual tDH will always be smaller than the actual tOW.
4. 'X' in part number indicates power rating (S or L).
5. Industrial temperatures: for specific speeds, packages and powers contact your sales office.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(4,5)
Symbol Parameter
71V30X25
Com'l Only 71V30X35
Com'l Only 71V30X55
Com'l Only
Unit
Min. Max. Min. Max. Min. Max.
WR I T E C YC L E
tWC Write Cy cle Time 25 ____ 35 ____ 55 ____ ns
tEW Chip Enable to End-of-Write 20 ____ 30 ____ 40 ____ ns
tAW Address Valid to End-of-Write 20 ____ 30 ____ 40 ____ ns
tAS Address Set-up Time 0 ____ 0____ 0____ ns
tWP Write Pulse Width 20 ____ 30 ____ 40 ____ ns
tWR Write Recovery Time 0 ____ 0____ 0____ ns
tDW Data Val id to E nd -o f-Write 12 ____ 20 ____ 20 ____ ns
tHZ Output Hig h-Z Time (1,2) ____ 12 ____ 15 ____ 30 ns
tDH Data Ho ld Ti me (3) 0____ 0____ 0____ ns
tWZ Write Enable to Output in High-Z(1,2) ____ 15 ____ 15 ____ 30 ns
tOW Outp ut A c tiv e fro m E nd -o f-Write (1,2,3) 0____ 0____ 0____ ns
3741 tbl 10
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
8
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5)
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W= VIL.
3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 2).
8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the
bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.
Timing Waveform of Write Cycle No. 1,(R/W Controlled Timing)(1,5,8)
tWC
ADDRESS
OE
CE
R/W
DATA OUT
DATA IN
tAS tWR
tOW
tDW tDH
tAW
tWP(2)
tHZ
(4) (4)
tWZ
tHZ
3741 drw 08
(6)
(7)
(7)
(7)
(3)
tWC
ADDRESS
CE
R/W
DATA IN
tAS tEW tWR
tDW tDH
tAW
3741 drw 09
(6) (2) (3)
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
9
tWC
tWP
tDW tDH
tBDD
tDDD
tBDA
tWDD
ADDR"B"
DATAOUT"B"
DATAIN"A"
ADDR"A" MATCH
VALID
MATCH
VALID
BUSY "B"
3741 drw 10
(1)
tAPS
R/W"A"
NOTES:
1. To ensure that the earlier of the two ports wins.
2. CEL = CER = VIL
3. OE = VIL for the reading port.
4. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A".
Timing Waveform of Write with Port-to-Port Read with BUSY(1,2,3,4)
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(6,7)
NOTES:
1. Port-to-port delay through SRAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read with BUSY".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual).
4. To ensure that the Write Cycle is inhibited on Port “B” during contention on Port “A”.
5. To ensure that the Write Cycle is completed on Port “B” after contention on Port “A”.
6. 'X' in part number indicates power rating (S or L).
7. Industrial temperature: for specific speeds, packages and powers contact your sales office.
71V30X25
Com'l Only 71V30X35
Com'l Only 71V30X55
Com'l Only
UnitSymbol Parameter Min. Max. Min. Max. Min. Max.
BUSY TIMING (M/S=VIH)
tBAA BUSY Access Time from Address Match ____ 20 ____ 20 ____ 30 ns
tBDA BUSY Disable Time from Address Not Matched ____ 20 ____ 20 ____ 30 ns
tBAC BUSY Access Time from Chip Enable ____ 20 ____ 20 ____ 30 ns
tBDC BUSY Disable Time from Chip Enable ____ 20 ____ 20 ____ 30 ns
tWH Write Ho ld After BUSY(5) 20 ____ 30 ____ 40 ____ ns
tWDD Write Pulse to Data Delay(1) ____ 50 ____ 60 ____ 80 ns
tDDD Write Data Valid to Read Data Delay (1) ____ 35 ____ 45 ____ 65 ns
tAPS A rb itratio n Prio ri ty Se t-up Time(2) 5____ 5____ 5____ ns
tBDD BUSY Disable to Valid Data(3) ____ 30 ____ 30 ____ 45 ns
37 41 tbl 11
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
10
NOTES:
1. tWH must be met for BUSY.
2. BUSY is asserted on port 'B' blocking R/W'B', until BUSY'B' goes HIGH.
3. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A".
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. If tAPS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted.
Timing Waveform of BUSY Arbitration Controlled Address Match Timing(1)
Timing Waveform of Write with BUSY(3)
Timing Waveform of BUSY Arbitration Controlled by CE Timing(1)
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. If tAPS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted.
BUSY'B'
3741 drw 11
R/W'A'
tWP
tWH
tWB
R/W'B' (2)
(1)
,
tAPS
ADDR
'A' AND 'B' ADDRESSES MATCH
tBAC tBDC
CE'B'
CE'A'
BUSY'A'
3741 drw 12
(2)
BUSY'B'
ADDRESSES DO NOT MATCH
ADDRESSES MATCH
tAPS
ADDR'A'
ADDR'B'
tRC OR tWC
3741 drw 13
(2)
tBAA tBDA
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
11
INT Clears
Timing Waveform of Interrupt Mode(1)
INT Sets
NOTES:.
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. See Interrupt Truth Table II.
3. Timing depends on which enable signal (CE or R/W) is asserted last.
4. Timing depends on which enable signal (CE or R/W) is de-asserted first.
NOTES:
1. 'X' in part number indicates power rating (S or L).
2. Industrial temperature: for specific speeds, packages and powers contact your sales office.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1,2)
71V30X25
Com'l Only 71V30X35
Com'l Only 71V30X55
Com'l Only
UnitSymbol Parameter Min. Max. Min. Max. Min. Max.
I NTE RRUPT TI MI NG
tAS Address Set-up Time 0 ____ 0____ 0____ ns
tWR Write Recovery Time 0 ____ 0____ 0____ ns
tINS Inte rrup t S e t Tim e ____ 25 ____ 25 ____ 45 ns
tINR Inte rrup t Re s e t Time ____ 25 ____ 25 ____ 45 ns
3741 tbl 12
tINS
ADDR'A'
INT'B'
INTERRUPT ADDRESS
tWC
tAS
R/W'A'
tWR
3741 drw 14
(3)
(3)
(2)
(4)
tRC
INTERRUPT CLEAR ADDRESS
ADDR'B'
OE'B'
tINR
INT'A' 3741 drw 15
tAS(3)
(3)
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
12
NOTES:
1. Assumes BUSYL = BUSYR = VIH
2. If BUSYL = VIL, then No Change.
3. If BUSYR = VIL, then No Change.
4. 'H' = HIGH,' L' = LOW,' X' = DON’T CARE
NOTES:
1. Pins BUSYL and BUSYR are both outputs for IDT71V30. BUSYX outputs on the
IDT71V30 are non-tristatable push-pull.
2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs
of this port. 'H' if the inputs to the opposite port became stable after the address and
enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result.
BUSYL and BUSYR outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW
regardless of actual logic level on the pin. Writes to the right port are internally ignored
when BUSYR outputs are driving LOW regardless of actual logic level on the pin.
Truth Tables
Table I. Non-Contention Read/Write Control(4)
NOTES:
1. A0L – A9L ≠ A0R – A9R.
2. If BUSY = L, data is not written.
3. If BUSY = L, data may not be valid, see tWDD and tDDD timing.
4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE
Table III Address BUSY Arbitration
Table II. Interrupt Flag(1,4)
Left or Right Port (1)
FunctionR/WCE OE D0-7
X H X Z Port Disab led and in Power-Down Mode, ISB2 or ISB4
XHX Z
CE
R = CE
L = VIH, Power-Down Mode, ISB1 or ISB3
LLXDATA
IN D ata o n P o rt Writte n Into M e mo ry (2)
HLLDATA
OUT Data in Memory Output o n Port(3)
H L H Z High Impedance Outputs
3741 tbl 13
Left Port Right Port
FunctionR/WLCELOELA9L-A0L INTLR/WRCEROERA9R-A0R INTR
LLX3FFXXXX X L
(2) S e t Rig ht INTR Flag
XXXXXXLL3FFH
(3)Res et Rig ht INTR Flag
XXX X L
(3) L L X 3FE X S e t Le ft INTL Flag
XLL3FEH
(2) X X X X X Reset Left INTL Flag
3 7 41 t b l 14
Inputs Outputs
Function
CELCERAOL-A9L
AOR-A9R BUSYL(1) BUSYR(1)
X X NO MATCH H H Normal
H X MATCH H H Normal
X H MATCH H H Normal
L L MATCH (2) (2) Write Inhib it(3)
3741 tbl 15
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
13
Functional Description
The IDT71V30 provides two ports with separate control, address
and I/O pins that permit independent access for reads or writes to any
location in memory. The IDT71V30 has an automatic power down
feature controlled by CE. The CE controls on-chip power down circuitry
that permits the respective port to go into a standby mode when not
selected (CE = VIH). When a port is enabled, access to the entire
memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail
box or message center) is assigned to each port. The left port interrupt
flag (INTL) is asserted when the right port writes to memory location
3FE (HEX), where a write is defined as the CE = R/W = VIL per Truth
Table II. The left port clears the interrupt by accessing address location
3FE access with CER = OER = VIL, R/W is a "don't care". Likewise, the
right port interrupt flag (INTR) is asserted when the left port writes to
memory location 3FF (HEX) and to clear the interrupt flag (INTR), the
right port must access the memory location 3FF. The message (8 bits)
at 3FE or 3FF is user-defined, since it is an addressable SRAM location.
If the interrupt function is not used, address locations 3FE and 3FF are not
used as mail boxes, and are part of the random access memory. Refer
to Table II for the interrupt operation.
Busy Logic
Busy Logic provides a hardware indication that both ports of the
SRAM have accessed the same location at the same time. It also
allows one of the two accesses to proceed and signals the other side
that the SRAM is “Busy”. The BUSY pin can then be used to stall the
access until the operation on the other side is completed. If a write
operation has been attempted from the side that receives a BUSY
indication, the write signal is gated internally to prevent the write from
proceeding.
The use of BUSY logic is not required or desirable for all applica-
tions. In some cases it may be useful to logically OR the BUSY outputs
together and use any BUSY indication as an interrupt source to flag the
event of an illegal or illogical operation.
6.42
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
14
Ordering Information
NOTE:
1. Industrial temperature range is available.
For specific speeds, packages and powers contact your sales office.
64-pin STQFP (PP64-1)
XXXXIDT Device Type A999 A A
Power Speed Package Process/
Temperature
Range
8K (1K X 8-Bit) MASTER Dual-Port RAM
Speed in
nanoseconds
3741 drw 16
Blank
I(1)
TF
25
35
55
L
S
71V30
Low Power
Standard Power
Commercial (0°Cto+70
°C)
Industrial (-40°Cto+85°C)
Commercial
Commercial
Commercial
CORPORATE HEADQUARTERS for SALES: for Tech Support:
2975 Stender Way 800-345-7015 or 408-727-6116 831-754-4613
Santa Clara, CA 95054 fax: 408-492-8674 DualPortHelp@idt.com
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
Datasheet Document History
12/9/98: Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Added additional notes to pin configurations
6/15/99: Changed drawing format
8/3/99: Page 2 Fixed typographical error
9/1/99: Removed Preliminary
11/12/99: Replaced IDT logo
1/17/01: Pages 1 and 2 Moved all of "Description" to page 2 and adjusted page layouts
Page 3 Increased storage temperature parameters
Clarified TA parameter
Page 4 DC Electrical parameters–changed wording from "open" to "disabled"
Changed ±200mV to 0mV in notes
