
INDUSTRIAL TEMPERATURE RANGE
4
IDT5T9070
2.5V SINGLE DATA RATE 1:10 CLOCK BUFFER TERABUFFER JR.
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions(1) Typ. Max Unit
IDDQ Quiescent VDD Power Supply Current VDD = Max., Reference Clock = LOW 1.5 2 mA
Outputs enabled, All outputs unloaded
IDDD Dynamic VDD Power Supply VDD = Max., VDD = Max., CL = 0p F 150 200 μA/MHz
Current per Output
ITOT Total Power VDD Supply Current VDD = 2.5V., FREFERENCE CLOCK = 100MHz, CL = 15pF 70 90 mA
VDD = 2.5V., FREFERENCE CLOCK = 200MHz, CL = 15pF 100 150
INPUT AC TEST CONDITIONS
Symbol Parameter Value Units
VIH Input HIGH Voltage VDD V
VIL Input LOW Voltage 0V
VTH Input Timing Measurement Reference Level(1) VDD/2 V
tR, tFInput Signal Edge Rate(2) 2 V/ns
NOTES:
1. A nominal 1.25V timing measurement reference level is specified to allow constant, repeatable results in an automatic test equipment (ATE) environment.
2. The input signal edge rate of 2V/ns or greater is to be maintained in the 10% to 90% range of the input waveform.
NOTE:
1. The termination resistors are excluded from these measurements.
AC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE(4)
Symbol Parameter Min. Typ. Max Unit
Skew Parameters
tSK(O) Same Device Output Pin-to-Pin Skew(1) ——125 ps
tSK(P) Pulse Skew(2) ——300 ps
tSK(PP) Part-to-Part Skew(3) ——300 ps
Propagation Delay
tPLH Propagation Delay A to Qn —— 2ns
tPHL
tROutput Rise Time (20% to 80%) 3 5 0 —850 ps
tFOutput Fall Time (20% to 80%) 3 5 0 —850 ps
fOFrequency Range ——200 MHz
Output Gate Enable/Disable Delay
tPGE Output Gate Enable to Qn ——3.5 ns
tPGD Output Gate Enable to Qn Driven to GL Designated Level —— 3ns
NOTES:
1. Skew measured between all outputs under identical input and output transitions and load conditions on any one device.
2 . Skew measured is the difference between propagation delay times tPHL and tPLH of any output under identical input and output transitions and load conditions on any one device.
3 . Skew measured is the magnitude of the difference in propagation times between any outputs of two devices, given identical transitions and load conditions at identical VDD levels
and temperature.
4. Guaranteed by design.