2 ow aint FAIRCHILD SEMICONDUCTOR BY De Bj ayesezy oo27925 3 i IRF440-443/IRF840-843 MTM7N45/7N50 N-Channel Power MOSFETs, 8 A, 450 V/500 V Power And Discrete Division erg arpa! FAIRCHILD Ee A Schlumberger Company T-39-11 Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed 8 applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. @ Vag Rated at +20 V f S @ Silicon Gate for Fast Switching Speeds sono \so0010F e ipss: Vpsion)s SOA and Vesith) Specified at Elevated IRF440 IRF840 Temperature : Rugged IRF441 IRF841 : IRF442 IRF842 IRF443 IRF843 MTM7N45 MTM7N50 Maximum Ratings Rating Rating IRF 440/442 IRF441/443 IRF840/842 IRF841/843 Symbol Characteristic MTM7N50 MTM7N45 Unit Voss Drain to Source Voltage 500 450 Vv ' Vor Drain to Gate Voltage 500 450 v Res = 20 kQ Ves Gate to Source Voltage +20 20 Vv Ty, Tstg | Operating Junction and ~55 to +150 -55 to +150 C | Storage Temperature TL Maximum Lead Temperature 275 275 C for Soldering Purposes, 1/8" From Case for 5 s Maximum On-State Characteristics IRF440/441 IRF442/443 MTM7N45 IRF840/841 IRF842/843 MTM7N50 Roson} Static Drain-to-Source 0.85 14 0.8 Q On Resistance Ib Drain Current A Continuous 8 7 7 Pulsed 32 28 40 Maximum Thermal Characteristics { Resc Thermal Resistance, 1.0 1.0 0.83 C/W Junction to Case Raga Thermal Resistance, 60 60 60 C/W Junction to Ambient Pp Total Power Dissipation 125 125 150 Ww at To = 25C Notes For information concerning connection diagram and package outline, refer to Section 7. 2-138 FAIRCHILD SEMICONDUCTOR ay pe ayeae74 1027926 4 i IRF440-443/IRF840-843 T-39-11 Electrical Characteristics (Tc = 25C unless otherwise noted) | | Max | Unit Symbol Characteristic Min Test Conditions | Off Characteristics i Viaryoss | Drain Source Breakdown Voltage! Vv Vas =0 V, Ip = 250 vA | IRF440/442/840/842 500 i IRF441/443/842/843 450 i lpss Zero Gate Voltage Drain Current 250 BA Vps = Rated Vpss: Ves = 9 V 4000 vA Vps = 0.8 x Rated Vpss, Veg =0 V, Tg = 125C less Gate-Body Leakage Current nA Ves =+20 V, Vos =0 V IRF440-443 +100 IRF840-843 +5600 On Characteristics Vestn) Gate Threshold Voltage 2.0 4.0 Vv Ip = 250 pA, Vos = Vas Rpsceon) | Static Drain-Source On-Resistance* Q Veg = 10 V, IDp=40A IRF440/441/840/841 0.85 1RF442/443/842/843 1,10 Gis Forward Transconductance 4.0 S (6) Vos=10 V, Ip=4.0A Dynamic Characteristics Cis Input Capacitance 1600 pF Vos = 25 V, Vag =0 V Coss Output Capacitance 350 pF f= 1.0 MHz Crss Reverse Transfer Capacitance 150 pF Switching Characteristics (To = 25C, Figures 9, 10) tayon) Turn-On Delay Time 35 ns Vpp = 220 V, Ip=4.0 A tr Rise Time 15 ns nos = 5 Raen = 4.7 9 tayotfy Turn-Off Delay Time 90 ns tt Fall Time 30 ns Qg Total Gate Charge 60 nc Vas = 10 V, Ip=12 A Vpp = 400 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF440/441/840/841 2.0 Vv lg = 8.0 A; Vag =0 V IRF442/443/842/843 1.9 Vv Ig =7.0 A; Veg =O V ter Reverse Recovery Time 700 ns Ig = 8.0 A; dig/dt = 100 A/pS Notes 1. Ty=+25C to + 150C 2. Pulse test: Pulse width <80 ys, Duty cycle <1% 2-139 FAIRCHILD SEMICONDUCTOR a4 de Bp syeae7y coarser g 7 MTM7N45/7N50 T-39-11 Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Vieryoss | Drain Source Breakdown Voltage! Vv Ves =0 V, Ip =5.0 mA MTM7N50 500 MTM7N45 450 lpss Zero Gate Voltage Drain Current 0.25 mA Vos = 0.85 x Rated Vpss, t Ves =O V 2.5 mA Vos = 0.85 x Rated Voss, Vas =0 V, To = 100C lass Gate-Body Leakage Current +500 nA Vas = +20 V, Vps=0 V . On Characteristics i Vasa) Gate Threshold Voltage 2.0 45 Vv Ip = 1.0 mA, Vos = Vas i 15 4.0 Vv Ip = 1.0 MA, Vps = Vag To = 100C ' Rpston) | Static Drain-Source On-Resistance 0.8 2 Veg = 10 V, Ip=3.5A | Vpscon) | Drain-Source On-Voltage* 28 V Veg = 10 V, Ip=3.5A . 7.0 V Ves = 10 V, Ilp=7.0 A 5.6 Vv Veg=10 V, Ip=3.5A To = 100C | Gis Forward Transconductance 4.0 S (@) Vos = 10 V, Ip=4.0 A Dynamic Characteristics : Ciss Input Capacitance 1800 pF Vos = 25 V. Vag =0 V Coss Output Capacitance 350 pF f= 1.0 MHz Ciss Reverse Transfer Capacitance 150 pF Switching Characteristics (Tc = 25C, Figures 9, 10)? , taon) | Turn-On Delay Time 60 ns Von = 25 V, Ip=3.5 A t Rise Time 150 ns noe to V, Raen = 50 2 tavotfy Turn-Off Delay Time 200 ns tr Fall Time 120 ns Qg Total Gate Charge 60 nc Vas=10 V, Ip=12A Vop = 400 V Notes 1. Ty = #25C to + 150C 2. Pulse test: Pulse width < 80 ys, Duty cycle < 1% 3. Switching time measuremenis performed on LEM TR-58 test equipment 1 2-140 er emoneerenomen FAIRCHILD SEMICONDUCTOR ay EB syec674 oneraza 2 IRF440-443/IRF840-843 MTM7N45/7N50 T-39-11 Typical Performance Curves Figure 1 Output Characteristics 10 Ip~DRAIN CURRENTA 1 2 3 4 5 6 7 VoaDRAIN TO SOURCE VOLTAGE={V Foiescr Figure 3 Transfer Characteristics 20 Vos =20V IbDRAIN CURRENT~A 2 3 4 5 6 7? 8 9 Vag GATE TO SOURCE VOLTAGEV PCIE Figure Capacitance vs Drain to Source Voltage 104 We VasoV f=1,0 MHz 3 8 109 < = g $ a 102 to" 1 2 5 0 2 50 100 VosDRAIN TO SOURCE VOLTAGE -V Purester Figure 2 Static Drain to Source Resistance Rasion) STATIC DRAIN TO SOURCE RESISTANCE Figure 4 Temperature Variation of Gate to NORMALIZED GATE THRESHOLD VOLTAGE Figure 6 Gate to Source Voltage vs VasGATE TO SOURCE VOLTAGEV vs Drain Current py @ Vas =10V a 12 O68 0.4 o 4 6 12 16 2 in DRAIN CURRENTA FoL0eate Source Threshold Voltage 0g 0.8 O77 0 -50 Q 50 100 150 T,-JUNCTION TEMPERATURE~-C POOSALI Total Gate Charge Voo = 400 lo =16A y= 0 10 20 nH a0 50 QgTOTAL GATE CHARGEnc Pcres2ge 2-141 FAIRCHILD SEMICONDUCTOR IRF440-443/IRF840-843 MTM7N45/7N50 T=39-11 Typical Performance Curves (Cont.) Figure 7 Forward Biased Safe Operating Area Curves 100 ip DRAIN CURRENT A SUNZ WLI CO /LbO/ert/ Let OSNL ALN ZPO/Ore/Zob/Ory of 10 50 100 500 1000 Vps DRAIN TO SOURCE VOLTAGEV PCLOSIOF Typical Electrical Characteristics Figure 9 Switching Test Circuit Vin PULSE GENERATOR Voo AL Vout 1 L cReassor Figure 8 Transient Thermal Resistance vs Time Pu RESISTANCEC/AW he | ZthJ-cTRANSIENT THERMAL 1 Duty Factor, 0 = & Dcurves apply to train of heating pulses =To+ Pu: t-TIMEms PCIgOOF Figure 10 Switching Waveforms jw fe on - OUTPUT, Vout INVERTED INPUT, Vin [10% | j_____ PULSE WIDTH wrCogOce 2-142 ay pe Mi synce74 ooa7saa y