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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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August 2014
FDPF44N25T — N-Channel UniFETTM MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
www.fairchildsemi.com
1
FDPF44N25T
N-Channel UniFETTM MOSFET
250 V, 44 A, 69 mΩ
Features
•R
DS(on) = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A
• Low Gate Charge (Typ. 47 nC)
•Low C
rss (Typ. 60 pF)
Applications
•PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter
FDPF44N25T
FDPF44N25TRDTU Unit
VDSS Drain-Source Voltage 250 V
IDDrain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
44*
26.4*
A
A
IDM Drain Current - Pulsed (Note 1) 176* A
VGSS Gate-Source voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 2055 mJ
IAR Avalanche Current (Note 1) 44 A
EAR Repetitive Avalanche Energy (Note 1) 30.7 mJ
dv/dt Peak Diode Recovery dv/d (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C)
- Derate Above 25°C
38
0.3
W
W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter
FDPF44N25T
FDPF44N25TRDTU Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 3.3 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5
G
S
D
TO-220F
LG-formed
TO-220F
GDS
G
S
D
FDPF44N25T — N-Channel UniFETTM MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.7 mH, IAS = 44 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 44 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDPF44N25T FDPF44N25T TO-220F Tube N/A N/A 50 units
FDPF44N25TRDTU FDPF44N25T TO-220F
(LG-formed) Tube N/A N/A 50 units
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 250 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C--0.25--V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0--5.0V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 22 A -- 0.058 0.069 Ω
gFS Forward Transconductance VDS = 40 V, ID = 22 A -- 32 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2210 2870 pF
Coss Output Capacitance -- 450 585 pF
Crss Reverse Transfer Capacitance -- 60 90 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125 V, ID = 44 A,
RG = 25 Ω
(Note 4)
-- 53 117 ns
trTurn-On Rise Time -- 402 814 ns
td(off) Turn-Off Delay Time -- 85 179 ns
tfTurn-Off Fall Time -- 112 234 ns
QgTotal Gate Charge VDS = 200 V, ID = 44 A,
VGS = 10 V
(Note 4)
-- 47 61 nC
Qgs Gate-Source Charge -- 18 -- nC
Qgd Gate-Drain Charge -- 24 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 44 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 44 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 44 A,
dIF/dt =100 A/μs
-- 195 -- ns
Qrr Reverse Recovery Charge -- 1.8 -- μC
FDPF44N25T — N-Channel UniFETTM MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
24681012
100
101
102
150oC
25oC
-55oC
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
10-1 100101
100
101
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
0 25 50 75 100 125 150
0.04
0.06
0.08
0.10
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
100
101
102
150oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
25oC
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
10-1 100101
0
1000
2000
3000
4000
5000
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
VDS = 125V
VDS = 50V
VDS = 200V
* Note : ID = 44A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
FDPF44N25T — N-Channel UniFETTM MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 22 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID
= 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
100101102
10-2
10-1
100
101
102
100 ms
1 ms
10 μs
DC
10 ms
100 μs
Operation in This Area
is Limited by R DS(on)
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
ZθJC(t), Thermal Response [oC/W]
FDPF44N25T — N-Channel UniFETTM MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
www.fairchildsemi.com
5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
FDPF44N25T — N-Channel UniFETTM MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
www.fairchildsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
B
4.90
4.50
3
3.40
3.20
3.28
3.08
B
10.36
9.96
2.54 2.54
1.47
1.24
0.90
0.70
7.00
2.14
1
0.50
M
A
A
B
2.66
2.42
B
16.07
15.67
0.70
6.88
6.48
1 X
45°
2.96
2.56
B
0.60
0.45
B
4.80
4.20
B
8.50
7.50
R
1.00
R
1.00
B
4.50
3.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220N03REV2
B
4.90
4.50
16.00
15.60
10.05
9.45
3.40
3.20
3.28
3.08
B
10.36
9.96
1.47
1.24
0.90
0.70
0.45
0.25
30°
2.54 2.54
7.00
2.14
(3.23)
B
13
SEE NOTE "F"
0.50
M
A
A
B
2.66
2.42
B
16.07
15.67
2.96
2.56
B
0.60
0.45
0.70
6.88
6.48
1 X
45°
SEE NOTE "F"
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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