SILICON DARLINGTON POWER TRANSISTOR NPN TIP122 5A 65W Technical Data ...designed for use in general-purpose low-speed switching and amplifier applications. F High DC Current Gain - h FE = 2500(Typ) @ IC = 4.0Adc F Collector-Emitter Saturation Voltage - VCE (sat) = 2Vdc (Max)@IC=3Adc F TO-220 Package F Collector-Emitter Sustaining Voltage - VCE O(sus) = 100Vdc (Min)@100mAdc MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage V CEO 100 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CB V EB IC 100 5 5 8 120 Vdc Vdc Adc mAdc 65 0.52 -65 to +150 Watts W/C C Max. Unit 1.92 C/W Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range IB PD Tj,Tstg THERMAL CHARACTERISTICS Characteristic Symbol Thermal resistance junction to case R thjc ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic C unless otherwise noted ] Symbol Min Voltage(1) VCEO(sus) 100 Typ Max Unit * OFF CHARACTERISTICS : Collector-Emitter Sustaining [ Ic =100mAdc, IB = 0 ] Collector Cutoff Current [ VCE = 50 Vdc, IB = 0 ] Vdc ICE0 0.5 mAdc Collector Cutoff Current [ VCE =100 Vdc,VBE = 0 ] ICBO 200 Adc Emitter Cutoff Current [ VEB =5.0 Vdc , Ic = 0 ] IEBO 2 mAdc * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 0.5 Adc , VCE = 3.0 Vdc ] [ Ic = 3Adc , VCE =3.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 12mAdc ] [Ic = 5Adc , IB = 20mAdc] Base-Emitter on Voltage [ Ic =3.0 Adc , VCE= 3.0. VDC ] hFE 1000 1000 ----- VCE(sat) 2 4 Vdc VBE(on) 2.5 Vdc COB 200 pF DYNAMIC CHARACTERISTICS : Output Capacitance [VCB=10Vdc,IE=0,f=0.1MHz] Small-Signal Current Gain [ IC= 0.5 Adc, VCE=4.0 Vdc, f=1kHz] * hfe (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0% 4