SILICON DARLINGTON POWER TRANSISTOR
NPN TIP122
5A 65W
Technical Data
…designed for use in general-purpose low-speed switching and amplifier
applications.
F High DC Current Gain - h FE = 2500(Typ) @ IC = 4.0Adc
F Collector-Emitter Saturation Voltage – VCE (sat) = 2Vdc (Max)@IC=3Adc
F TO-220 Package
F Collector-Emitter Sustaining Voltage – VCE O(sus) = 100Vdc (Min)@100mAdc
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V CEO 100 Vdc
Collector – Base Voltage V CB 100 Vdc
Emitter Base Voltage V EB 5 Vdc
Collector Current – Continuos
Peak I C5
8Adc
Base Current I B120 mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 65
0.52 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 1.92 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =100mAdc, IB = 0 ] V
CEO(sus)
100 Vdc
Collector Cutoff Current
[ VCE = 50 Vdc, IB = 0 ] ICE0 0.5 mAdc
Collector Cutoff Current
[ VCE =100 Vdc,VBE = 0 ] ICBO 200 µAdc
Emitter Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ] IEBO 2 mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 0.5 Adc , VCE = 3.0 Vdc ]
[ Ic = 3Adc , VCE =3.0 Vdc ]
hFE 1000
1000 ---
---
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB = 12mAdc ]
[Ic = 5Adc , IB = 20mAdc] VCE(sat) 2
4Vdc
Base-Emitter on Voltage
[ Ic =3.0 Adc , VCE= 3.0. VDC ] VBE(on) 2.5 Vdc
DYNAMIC CHARACTERISTICS :
Output Capacitance
[VCB=10Vdc,IE=0,f=0.1MHz] COB 200 pF
Small-Signal Current Gain
[ IC= 0.5 Adc, VCE=4.0 Vdc, f=1kHz] hfe 4
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
