NOT FOR NEW DESIGNS
4-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
13
2
4
RF OUTRF IN
GND
GND
MARKING - R2
RF3818
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 3GHz
Cellular Basestation Amplifiers and
Transceivers
Gain Stage or Driver Amplifiers for Linear and
Saturated Amplifiers
Narrow and Broadband Commercial and
Military Radio Designs
The RF3818 is a high-performance InGaP/GaAs general
purpose RF and microwave gain block amplifier. This
50 amplifier is based on a reliable HBT MMIC design,
providing unsurpassed performance for many small-sig-
nal applications. Designed with an external bias resistor,
the RF3818 provides high output power and high gain
over broad frequency range. This low-cost amplifier is
packaged in a thermally efficient, industry standard,
ceramic Micro-X package providing excellent ThetaJC
performance.
Reliable, Low-Cost HBT Design
19.0dB Gain, +18.2dBm P1dB@1.0GHz
High P1dB of +17.9dBm@3.0GHz
Single 6V Power Supply Operation
•50 I/O Matched
T hermally-Efficient Pac kage
RF3818 Cascadable Broadband GaAs MMIC Am plifier DC to
3GHz (Bulk: 25 pi ece increment)
RF3818SB 5-piece Sample Bag
RF3818SR 100-piece Reel
RF3818TR7 7” Reel (1,000 pieces)
RF3818PCBA-410Evaluat ion Board
0
Rev A2 041013
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.070
sq.
45°
+ 1°
R2
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
0.200 sq.
Typ
Package Style: Micro-X, 4-Pin, Ceramic
Proposed
NOT FOR NEW DESIGNS
9
Proposed
4-2
RF3818
Rev A2 041013
NOT FOR NEW DESIGNS
Please contact
RF Micro Devices
Applications Engineering
at (336) 678-5570
for more information.