DIM1200NSM17-E000 DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 FEATURES PDS5644-3.0 July 2004 Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 10s Short Circuit Withstand *Measured at auxiliary terminals. Isolated MMC Base with AlN Substrates High Thermal Cycling Capability 1700V 2.0V 1200A 2400A External connection APPLICATIONS C1 C2 E1 E2 Aux C High Reliability Inverters Wind Turbines Motor Controllers UPS Systems G Aux E Traction Propulsion Drives Auxiliaries External connection Fig. 1 Single switch circuit diagram The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM1200NSM17-E000 is a single switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This module is optimised for applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. C1 E1 C1 E2 G E2 C2 E2 - Aux Emitter C1 - Aux Collector ORDERING INFORMATION Order As: DIM1200NSM17-E000 Note: When ordering, please use the complete part number. Outline type code: N (See package details for further information) Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 DIM1200NSM17-E000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1700 V 20 V Continuous collector current Tcase = 75C 1200 A IC(PK) Peak collector current 1ms, Tcase = 110C 2400 A Pmax Max. transistor power dissipation Tcase = 25C, Tj = 150C 6.94 kW Diode I2t value VR = 0, tp = 10ms, Tvj = 125C 200 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V QPD Partial discharge - per module IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS 10 PC IC I2t 2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200NSM17-E000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 18 C/kW - - 40 C/kW - - 8 C/kW junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 C Diode - - 125 C -40 - 125 C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 DIM1200NSM17-E000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 5 mA VGE = 0V, VCE = VCES, Tcase = 125C - - 25 mA Gate leakage current VGE = 20V, VCE = 0V - - 4 A VGE(TH) Gate threshold voltage IC = 48mA, VGE = VCE 5.2 5.8 6.4 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 2.0 2.4 V VGE = 15V, IC = 1200A, , Tcase = 125C - 2.3 3.0 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 1200 A IFM Diode maximum forward current tp = 1ms - - 2400 A VF Diode forward voltage IF = 1200A - 1.9 2.3 V IF = 1200A, Tcase = 125C - 2.0 2.4 V VCE = 25V, VGE = 0V, f = 1MHz - 105 - nF Cies Input capacitance LM Module inductance - - 20 - nH Internal transistor resistance - - 0.27 - m RINT SCData Short circuit. ISC Tj = 125C, VCC = 1000V, I1 - 4500 - A tp 10s, VCE(max) = VCES - L*. di/dt I2 - 4300 - A IEC 60747-9 Note: Measured at auxiliary terminals. * L is the circuit inductance + LM 4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200NSM17-E000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Min. Typ. Max. Units IC = 1200A - 1200 - ns Fall time VGE = 15V - 200 - ns EOFF Turn-off energy loss VCE = 900V - 320 - mJ td(on) Turn-on delay time RG(ON) = 1.2 - 900 - ns Rise time RG(OFF) = 1.5 - 220 - ns L ~ 100nH - 300 - mJ - 14 - C IF = 1200A, VR = 900V, - 275 - C dIF/dt = 5200A/s - 950 - A - 180 - mJ Min. Typ. Max. Units IC = 1200A - 1300 - ns Fall time VGE = 15V - 300 - ns EOFF Turn-off energy loss VCE = 900V - 420 - mJ td(on) Turn-on delay time RG(ON) = 1.2 - 900 - ns Rise time RG(OFF) = 1.5 - 250 - ns L ~ 100nH - 400 - mJ IF = 1200A, VR = 900V, - 475 - C dIF/dt = 5200A/s - 1150 - A - 320 - mJ Parameter Symbol td(off) tf tr Turn-off delay time EON Turn-on energy loss Qg Gate charge Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Tcase = 125C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Note: Switching Characteristic measurements taken using standard driver circuit conditions. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/9 DIM1200NSM17-E000 TYPICAL CHARACTERISTICS 2400 Common emitter 2200 Tcase = 25C Common emitter 2200 Tcase = 125C 2000 2000 1800 1800 Collector current, IC - (A) Collector current, IC - (A) 2400 1600 1600 1400 1400 1200 1200 1000 1000 800 600 600 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 400 200 0 800 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 Vge = 10V Vge = 12V Vge = 15V Vge = 20V 400 200 0 0 4.0 Fig. 3 Typical output characteristics 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig. 4 Typical output characteristics 500 2000 Conditions: Tcase = 125C 450 Vcc = 900V Rg(on) = 1.2 ohms R = 1.5 ohms 400 g(off) Conditions: Tcase = 125C IC = 1200A Vcc = 900V 1500 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 350 300 250 200 150 1000 Eon Eoff Erec 500 100 Eon Eoff Erec 50 0 0 200 400 600 800 Collector current, IC - (A) 1000 1200 Fig. 5 Typical switching energy vs collector current 6/9 0 0 2 6 4 Gate resistance, Rg - (ohms) 8 10 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200NSM17-E000 2400 2200 2800 Tj = 25C Tj = 125C 2600 2400 2000 2200 1800 Collector current, IC - (A) Forward current, IF - (A) 2000 1600 1800 1400 Chip 1600 1200 1400 1200 1000 Module 1000 800 800 600 600 400 400 Tcase = 125C V ge = 15V 200 Rg(min) = 1.5 Ohms 0 1200 0 400 800 1600 Collector-emitter voltage, Vce - (V) 200 0 0 0.5 1.0 1.5 2.0 Forward voltage, VF - (V) 2.5 3.0 Fig. 7 Diode typical forward characteristics 2000 Fig. 8 IGBT reverse bias safe operating area 100 1600 Tj = 125C Diode Transient thermal impedance, Zth (j-c) - (C/kW ) 1400 Reverse recovery current, Irr - (A) 1200 1000 800 600 400 Transistor 10 1 IGBT 200 Diode 0 0 200 400 600 800 1000 1200 1400 1600 1800 Reverse voltage, Vr - (V) Fig. 9 Diode reverse bias safe operating area 0.1 0.001 Ri (C/KW) ti (ms) Ri (C/KW) ti (ms) 0.01 1 0.56 0.12 1.23 0.11 0.1 Pulse width, tp - (s) 3 5.64 47.15 12.96 48.75 1 4 7.81 257.21 16.53 256.75 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 4.00 3.89 9.26 4.24 7/9 DIM1200NSM17-E000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 20 20 C1 C1 65 57 E2 18 48.8 10.65 E1 E2 E2 - Aux Emitter C1 - Aux Collector 43.5 57 65 10.35 G C2 20 40 45.2 6x O7 4x M8 38 28 31.5 6x M4 External connection 5 140 C1 C2 E1 E2 Aux C Main Terminal screw plastic hole depth (M8) = 16.8 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9 0.3 Copper terminal thickness, Main Terminal pins = 1.5 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 0.1 G Aux E Nominal weight: 1050g External connection Module outline type code: N Fig. 11 Package details 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97 Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. 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It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com