DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 (DPak) Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSS6-0045AS Ratings Schottky Conditions min. Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 45 IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V 45 V TVJ = 25C 250 A 45 V TVJ = 125C 2.5 mA TVJ = 25C 0.63 V 0.71 V 0.50 V 6A IF = 12 A IF = 6A IF = 12 A TVJ = 125 C TC = 165C 0.59 V T VJ = 175 C 6 A TVJ = 175 C 0.35 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C (c) 2013 IXYS all rights reserved Unit V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. max. VR = IF = forward voltage drop typ. 13.9 m 3 K/W K/W 0.50 TC = 25C 5 V f = 1 MHz 50 120 497 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031b DSS6-0045AS Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 20 Unit A -55 175 C -55 150 C 150 C Weight FC 1) typ. 1) 0.3 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo Part number Assembly Line IXYS abcdefg Z YY WW Date Code Ordering Standard Part Number DSS6-0045AS Equivalent Circuits for Simulation I V0 R0 Marking on Product 6Y045AS * on die level Delivery Mode Tape & Reel Code No. 497878 T VJ = 175 C Schottky V 0 max threshold voltage 0.35 V R 0 max slope resistance * 10.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 2500 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSS6-0045AS Outlines TO-252 (DPak) 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSS6-0045AS Schottky 100 20 1000 10 TVJ=175C 10 1 150C IR IF CT 125C 0.1 100C [mA] [A] 1 0.0 [pF] 50C 0.001 25C 100 0.0001 0.2 0.4 0.6 TVJ= 25C 0.01 75C TVJ = 175C 150C 125C 25C 0.8 1.0 0 10 20 VF [V] 30 40 50 VR [V] Fig. 1 Max. forward voltage drop characteristics 10 20 30 40 50 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 25 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 14 12 20 10 DC d = 0.5 15 d= DC 0.5 0.33 0.25 0.17 0.08 8 IF(AV) P(AV) 6 10 [A] [W] 4 5 2 0 0 0 50 100 150 200 0 TC [C] 5 10 15 20 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 10 1 ZthJC [K/W] D = 0.5 0.33 0.25 0.17 0.08 Single Pulse 0.1 0.01 0.0001 Note: All curves are per diode 0.001 0.01 t [s] 0.1 1 10 Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b