SGS-THOMSON MICROELECTRONICS ky P01xxxA/B SENSITIVE GATE SCR FEATURES a IT(7RMS) =0.8A = VorM = 100V to 400V a Low let< 1A maxto <200nA DESCRIPTION The PO1xxxA/B series of SCRs uses a high TO92 RD26 performance planar PNPN technology. These (Plastic) (Plastic) pants are intended for general purpose applications where low gate sensitivity is required. PO1XxxA PO1xxxB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IAMS) RMS on-state current Tl= 58C 0.8 A (180 conductionangle) IT(Ay) Mean on-state current Tl= 58C 0.5 A (180 conductionangle) ITsmM Non repetitive surge peak on-state current | tp =8.3 ms 8 A (Jj initial = 25C ) tp = 10 ms 7 I*t ?t Value for fusing tp = 10 ms 0.24 As dl/dt Critical rate of rise of on-state current 30 A/us Ia@=10mA dig /ct =0.1 A/us. Tst Storage and operating junction temperature range - 40, +150 C Tj - 40, +125 Tl Maximum lead temperature for soldering during 10s at 260 C 2mm from case Voltage Symbol Parameter Unit A B Cc D VpRM Repetitive peak off-state voltage 100 | 200 | 300 | 400 Vv VRRM Tj =125G Rek = 1KQ January 1995 1/5 PO1xxxA/B THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) | Junction to ambient 150 CAV Rth(j-l) Junction to leads tor DC 80 CAV GATE CHARACTERISTICS (maximum values) Pe wave 0.1 W Pem =2 W (tp = 20s) lam=1 A(ip= 205s) ELECTRICAL CHARACTERISTICS Sensitivity Symbol Test Conditions Unit 02 | O9 11 15 | 18 lat Vo=12V (DC) Ri=1400 Tj= 25C | MIN 4 15/05] pA MAX | 200 1 25 | 50 5 Vet Vp=12V (DC) Ri=1400 Tj= 25C | MAX 0.8 Veo Vo=Vprm RiL=3.3kQ2 Tj= 125C | MIN 0.1 V Rek =1K2 VRGM IRa =10uA Tj= 25C | MIN 8 Vv igd Vp=Vprm ~~ ItM= 3x Hav) Tj= 25C | TYP 0.5 Ls diefdt=0.1AUs Ig=10mA IH r= 50mA Rex =1 KO Tj= 25C | MAX 5 mA IL Ig=1mA Rex =1KQ Tj= 25C | MAX 6 mA VIM Tu= 1.6A tp= 380us Ti= 25C | MAX 1.93 Vv IDRM Vp =Vorm Rak = 1K Tj= 25C | MAX 1 LA IRRM Vr =VARM Tj= 125C | MAX 100 LA dV/at Vp=67%VprmM Rek =1 KO Tj=125C |} MIN | 25 | 25 | 50 | 100} 30 | Vus tq m= 3 x ITrav) VR=35V Tj= 125C | MAX 200 us di/dt=10Adais tp=100us dV/dt=10V/us Vo= 67%VorM Rek = 1 KO ORDERING INFORMATION SCR PLANAR | PACKAGES : A=TO92 B=RD26 CURRENT SENSITIVITY VOLTAGE 2/5 hr SGS-THOMSON MIGRGELESTROMIGS PO1xxxA/B Fig.1 : Maximum average power dissipation ver- sus average on-state current. P (W) 1 T T 360" a fy a = DC 0.6 /, LDS O = 120 0.4 Pa a CY = 60 Of = 30 O 0.1 02 03 O4 O85 O68 OF O8 a 0.2 TyavyA) o Fig.3: Average on-state current versus lead tem- perature. ITcayylA) Ty 08 be ; I M 0.6 aN 0.4. OF 180 TAY i SY RK 0.2 J Tlead (C) N\ o 1 1 1 Oo 10 20 30 40 50 60 70 80 390 100 110 120 130 Fig.5: Relative variation of gate trigger current and holding current versus junction temperature. Igt{ Ti] Ih[Tj] Igt[Tj=25 C] = Ih[Tj=25 C] 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 Tiec) -40 -20 O 20 = 640 60 8=680 100 120 140 Fig.2 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb and Tlead}. P (Ww) Tlead (C) 1 45 oh QRthd-) SN ee 2) \ -65 0.6 < aw 185 os KN MN -105 0.2 ~! \ Tamb ('C) NY 4 0 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zih(-a)/Rth{-a) 1.00 ipis) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E42 SE+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Tomt4) Tj initial = 25C Number of cycles 1 10 400 1,000 o = nN WwW fbf uwanyt ao {7 SGS-THOMSON 3/5 Nf wicrorecRoMmes PO1xxxA/B Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of It. lrg (A). Pt (Ars) Ir (A) 100 10 initial = 25 T initi 25C 10 4 4 0.1 0.1 1 005 115 2 25 3 35 4 45 5 55 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) 3 ih(igk=1k Q) 1.0 Q 0.1 1.0E6+00 1.0E+01 1.06+02 1.06+03 1.06+04 1.06405 1.0E+06 as hr SGS-THOMSON MIGRGELESTROMIGS PO1xxxA/B PACKAGE MECHANICAL DATA TOQ92 (Plastic) DIMENSIONS REF. Millimeters Inches Typ. | Min. | Max. | Typ. | Min. Max. A 1.35 0.053 B 47 0.185 Cc 2.54 0.100 D 44 48 0.173]0.189 E 12.7 0.500 F 3.7 0.146 a 0.45 0.017 Marking : type number Weight: 0.2 g PACKAGE MECHANICAL DATA RD26 (Plastic) DIMENSIONS REF. Millimeters Inches A Typ. | Min. | Max. | Typ. | Min. | Max. c _ A | 254 0.100 B | aq nh B 3.7 0.146 Cc 1.35 0.053 D 44 48 0.173]0.189 F E 127 0.500 F 47 0.185 G 3.0 0.118 a 0.45 0.177 Marking : type number Weight: 0.2 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical componentsin life support devices or systems without exprass written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. {7 SGS-THOMSON 5/5 Nf wicrorecRoMmes