NTE5538
Silicon Controlled Rectifier (SCR)
800VDRM, 50A
Description:
The NTE5538 general purpose SCR is suited for power supplies up to 400HZ on resistive or inductive
loads.
Features:
DGlass Passivated Chip
DHigh Stability and Reliability
DHigh Surge Capability
DHigh On–State Current
DEasy Mounting on Heatsink
DIsolated Package: Insulating Voltage 2500VRMS
Absolute Maximum Ratings:
Peak Forward Blocking Voltage (TJ = +125°C), VDRM 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Blocking Voltage (TJ = +125°C), VRRM 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +70°C, Note 1), IT (RMS) 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average On–State Current (TC = +70°C, Note 1), IT(AV) 32A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Surge Peak On–State Current (TJ initial = +25°C, Note 2), ITSM
(t = 8.3ms) 525A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(t = 10ms) 500A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I2t Value (t = 10ms), I2t 1250A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Critical Rate of Rise of On–State Current (Note 3), di/dt 100A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage and Operating Junction Temperature Range, Tstg, TJ–40° to +125°C. . . . . . . . . . . . . . . . . .
Thermal Resistance
Junction–to–Case for DC, RthJC 1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact (Case–to–Heatsink), RthCH 0.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Single phase circuit, 180° conducting angle.
Note 2. Half sine wave.
Note 3. IG = 800mA, diG/dt = 1A/µs.
Gate Characteristics: (Maximum Values)
Peak Gate Power (t = 10µs), PGM 50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, PG (AV) 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current (t = 10µs), IFGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Voltage (t = 10µs), VFGM 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, VRGM 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Trigger Current IGT VD = 12V, RL = 33Ω, tp ≥ 20µs– – 80 mA
Gate Trigger Voltage VGT – – 1.5 V
Gate Non–Trigger Voltage VGD TJ = +125°C, VD = 800V, RL = 3.3kΩ0.2 – – V
Holding Current IHIT = 0.5A, Gate Open –20 150 mA
Peak On–State Voltage VTM ITM = 100A, tp = 10ms – – 1.9 V
Forward Leakage Current IDRM VDRM = 800V – – 0.02 mA
TJ = +125°C– – 6.0 mA
Reverse Leakage Current IRRM VDRM = 800V – – 0.02 mA
TJ = +125°C– – 6.0 mA
Total Turn–On Time tgt IT = 80A, VD = 800V, IG = 200mA, diG/dt = 0.2A/µs–2–µs
Turn–Off Time tqTJ = +125°C, IT = 80A, VR = 75V, VD = 536V,
diR/dt = 30A/µs, dv/dt = 20V/µs, Gate Open –100 –µs
Critical Rate of Rise of
Off–State Voltage dv/dt TJ = +125°C, VDRM = 536V, Gate Open,
Linear Slope Up 500 – – V/µs
KAG
Isol
.060 (1.52)
.173 (4.4)
.215 (5.45)
.055 (1.4) .015 (0.39)
.500
(12.7)
Min
.430
(10.92)
.550
(13.97)
.156
(3.96)
Dia.
NOTE: Dotted line indicates
that case may have square
corners.
.600 (15.24)
