TOSHIBA 2SC5548A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5548A SWITCHING REGULATOR APPLICATIONS Unit in mm (A) : HIGH VOLTAGE SWITCHING APPLICATIONS 6 8MAX. 4 DC-DC CONVERTER APPLICATIONS ezzoa] 3 ape 0.640.15 4s e High Speed Switching : ty = 0.5 4s (Max.), tg = 0.3 us (Max.) g e6Max (I = 0.8 A) he e High Collector Breakdown Voltage : VcRo = 400 V + # 7m oe oe Tt = e High DC Current Gain : hpp = 40(Min.) (I = 0.2 A) ) a 6.8MAX. 5.240.2 aaj SMAAK C4 ~ 0.6 0.15 S = MAXIMUM RATINGS (Ta = 25C) 0.95MAX. = CHARACTERISTIC SYMBOL | RATING | UNIT 23) Collector-Base Voltage VCBO 600 Vv Collector-Emitter Voltage VCEO 400 Vv 1. BASE Emitter-Base Voltage VEBO 7 Vv 2. COLLECTOR DG Ic 2 (HEAT SINK) Collector Current A 3. EMITTER Pulse Icp 4 JEDEC _ Base Current z = Ip = A EIAJ _ Collector Power a = 25 . Dissipation Te = 25C Pc 15 WwW TOSHIBA (A)2-7B1A (B)2-7B2A Junction Temperature Tj 150 C Storage Temperature Range T stg 55~150 C 961001EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION oar others. @ The information contained herein is subject to change without notice. 1999-06-17 1/4 TOSHIBA 2SC5548A ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp = 480 V, Ip = 0 20 | A Emitter Cut-off Current IgBO Vep =7V,I =0 10 | A Collector-Base Breakdown Ic = 1mA, Ip = 60 | | | v Voltage V (BR) CBO |!c = 1mA, Ip = 0 0 Collector-Emitter Breakdown Voltage V (BR) CEO |!c = 10 mA, Ip = 0 400 | _ Vv . hrg(1) | VCE =5V, Ic =1mA 20 DC Current Gain herp) [Vor =5V, IG =0.2A 40 | | 100 Collector-Emitter Saturation = 0. =0. 1. Voltage VCE (sat) [Ic = 0.8A, Ip =0.1A 0 Vv Base-Emitter Saturation =08A,Ip=0.1A _ _ 1.3 Vv Voltage VBE (sat) |1C Ip =0 Vcc = 200 V Turn-on Time] ty ap4s ce Ic| 0.5 Switch mil) INPUT 'B1 Sour witching . B2 Ww fo _ Time Storage Time tstg ipo1 PUT 3.0 ps Fall Time te Tpi = 0.1A, Ipg = 0.24 | | os DUTY CYCLE = 1% 1999-06-17 2/4 TOSHIBA 2SC5548A Ic VCE hFE Ic 1 3 ay 300 2 = Es = 100 Te = 100C a < & o 2 z oO oe a z 5 oO =10mA oD 1 a Q 2 a o COMMON EMITTER 38] COMMON EMITER Te = 25C Vor =5V 0 2 4 6 8 10 1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE Veg (CV) COLLECTOR CURRENT Ic (A) VCE (sat) Ic VBE (sat) Ic 10 COMMON EMITER Ic /Ip =8 COMMON EMITER Ic/Tp =8 o ow 2 BASE-EMITTER SATURATION VOLTAGE VBE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VoE(sat) (V) 0.03 0.1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.08 od 0.8 1 8 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A) Ic - VBE Pc - Ta COMMON EMITER Vor =5V Te=Ta INFINITE HEAT SINK & NO HEAT SINK Ic (A) Po (W) COLLECTOR CURRENT Te = 100C 257 55 COLLECTOR POWER DISSIPATION 0 0.4 0.8 1.2 16 0 25 50 7 100 125 150 175 200 BASE-EMITTER VOLTAGE VBE (CV) AMBIENT TEMPERATURE Ta (C) 1999-06-17 3/4 TOSHIBA 2SC5548A COLLECTOR CURRENT Ic (A) 10 0.5 0.3 0.1 0.05 0.03 0.005 0.003 0.001 1 rth tw wo So oO e 2 Oo wo on oo on CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) nw TRANSIENT THERMAL RESISTANCE rth CC/W) Qo 1 @ INFINITE HEAT SINK 05 @ NO HEAT SINK 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH tw (s) SAFE OPERATING AREA SWITCHING CHARACTERISTICS Ig = 8Ipi 21p1 = -Ip2 Voec = 200 V PULSE WIDTH = 20 ps DUTY CYCLE 51% Te = 25C - 100 ys MAX. (PULSED) 3X MAX. OPERATION Te = 25C SWITCHING TIME (ys) 10 msX% 100 tf 0.1 03 05 1 3 OB 10 COLLECTOR CURRENT Ic (A) %<SINGLE NONREPETITIVE PULSE Te = 25C Curves must be derated linearly with increase in VcEO MAX. temperature. 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE Vocgz (V) 1999-06-17 4/4