AO) ReMOS [F FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features Polysilicon gate Improved stability and reliability No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling el IRFF 112,113 3.0 AMPERES 100, 60 VOLTS RDS(ON) = 0.8 0 Pretiminary N-CHANNEL ZB CASE STYLE TO-205AF (TO-39) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.350-0.370 (8.890-9.388) 0.318-0.335 1 T7e-001-8 509) 0,160-0.180 0.019-0.033 "(4.07-4.87) '0.483-0.838) 3 te - SEATIN OF t PLANE 0.009-0.018 fy Yo Wy ~~ orain (0.220-0.487) 7 GATE -t U SOURCE 0.500 0.018-0.01 (0:406-0.483) (12.70) MIN 0.029-0.048 (0.737-1.143) 0.028-0.034 (0.7114-0.864) yY x 45" 0.180-0.210 (4.826-5.334) TYPE TERM. 1 TERM. 2 TERM. 3 [_10-205aF_| [source _| [DRAIN | GATE maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFF112 IRFF113 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Ras = 1M0. VpGR 100 60 Volts Continuous Drain Current @ To = 25C Ip 3.0 3.0 A Pulsed Drain Current lpm 12 12 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ To = 25C Pp 15 15 Watts Derate Above 25C 0.12 0.12 W/C Operating and Storage Junction Temperature Range Ty, Tste -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 8.33 8.33 C/W Thermal Resistance, Junction to Ambient Resa 175 175 C/W Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 259 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFF112 BVpss 100 _ _ Volts (Vag = OV, Ip = 250 WA) IRFF113 60 Zero Gate Voltage Drain Current loss (Vps = Max Rating, Veg = OV, Tro = 25C) = _ 250 HA (Vps = Max Rating, x 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vos = Vas. Ip = 250 nA) On-State Drain Current i 3.0 _ _ A (Vag = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (V@g = 10V, Ip = 1.54) RDS(ON) - 0.8 Ohms Forward Transconductance (Vpg = 10V, Ip = 1.5A) Sts 0.7 ~ - mhos dynamic characteristics Input Capacitance Vag = 0V Ciss _ _ 200 pF Output Capacitance Vos = 25V Coss _ _ 100 pF Reverse Transfer Capacitance f= 1 MHz Crss _ _ 25 pF switching characteristics Turn-on Delay Time Vos = 30V ta(on) _ 10 _ ns Rise Time Ip = 1.5A, Vag = 15V tr 15 ns Turn-off Delay Time Roen = 500, Res = 12.52 td(off) _ 15 _ ns Fall Time (Ras (Equiv.) = 100) tr _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 3.0 A Pulsed Source Current Ism _ _ 12 A Diode Forward Voltage _ _ 2 (To = 25C, Veg = OV, Ig = 3.5A) Vsp 0 Volts Reverse Recovery Time ter _ 200 _ ns (Ig = 3.5A, di,/dt = 100A/usec, Tc = 125C) Qrar _ 1.0 _ uC Pulse Test: Pulse width < 300 us, duty cycle <= 2% 8 8&8 888 aad a 2 10 bel. te-ae CF 08 Ty = 150C MAX, 04 = 8.33 KW PULSE o2 TION IN THIS . AREA 1S LIMITED BY Rosion) IRFFI {p, DRAIN CURRENT (AMPERES) oc Ot 10 2 4 6 810 20 40 60 80100 200 400 600 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA CONDITIONS: Rps(on) CONDITIONS: Ip = 1.5 A. Vgg = 10V V@s(TH) CONDITIONS: Ip= 250uA, Vos= Ves Rosion) VesitH) Rosion) AND Vegity) NORMALIZED 40 0 40 80 120 160 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogioy, AND Vagirn) VS. TEMP. 260