WS1M32V-XG3X HI-RELIABILITY PRODUCT 1Mx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES n Access Times of 17, 20, 25ns n 3.3 Volt Power Supply n 84 lead, 28mm CQFP, (Package 511) n Low Power CMOS n Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 n Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation n Commercial, Industrial and Military Temperature Ranges n Weight WS1M32V-XG3X - 20 grams typical n TTL Compatible Inputs and Outputs * This data sheet describes a product under development, not fully characterized, and is subject to change without notice. PIN CONFIGURATION FOR WS1M32V-XG3X PIN DESCRIPTION GND I/O31 I/O30 I/O29 I/O28 I/O27 I/O26 I/O25 I/O24 NC NC NC I/O23 I/O22 I/O21 I/O20 I/O19 I/O18 I/O17 I/O16 VCC TOP VIEW 11 10 9 8 7 6 5 4 3 2 1 84 83 82 81 80 79 78 77 76 75 VCC A0 A1 A2 A3 A4 A5 A6 OE1 OE2 OE3 OE4 NC A7 A8 A9 A10 A11 A12 A13 GND 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 GND NC NC NC NC NC NC NC NC WE4 WE3 WE2 WE1 NC NC A18 A17 A16 A15 A14 VCC I/O0-31 Data Inputs/Outputs A 0-18 Address Inputs WE 1-4 Write Enables CS 1-2 Chip Selects OE1-4 Output Enables VCC +3.3V Power Supply GND Ground NC Not Connected BLOCK DIAGRAM OE 1 W E 1 OE 2 W E 2 OE 3 W E 3 OE 4 W E 4 CS 1 A0-18 2Mxx88 512K 2Mxx88 512K 8 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 2Mxx88 512K 8 512K x 8 2M x 8 512K 512K x 8 512K x 8 512K x 8 8 8 CS 2 VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS1 NC CS2 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 GND I/O0-7 I/O16-23 I/O24-31 NOTE: CS 1 & CS 2 are used as bank select The WEDC 84 lead G3 CQFP fills the same fit and function as the JEDEC 84 lead CQFJ or 84 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form. 1.146" February 2001 Rev. 5 I/O8-15 1 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS1M32V-XG3X ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 125 C C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active Operating Temperature TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 4.6 V Junction Temperature TJ 150 C 4.6 V Storage Temperature Supply Voltage -0.5 VCC RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Supply Voltage VCC 3.0 3.6 V Input High Voltage VIH 2.2 V CC + 0.3 V Input Low Voltage VIL -0.3 +0.8 V CAPACITANCE (TA = +25C) Unit Parameter Symbol Conditions Max Unit OE1-4 capacitance COE VIN = 0 V, f = 1.0 MHz 20 pF WE1-4 capacitance CWE VIN = 0 V, f = 1.0 MHz 20 pF CS1-2 capacitance CCS VIN = 0 V, f = 1.0 MHz 50 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 20 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 70 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 3.3V 0.3V, TA = -55C to +125C) Parameter Sym Conditions Min Max 10 Units Input Leakage Current I LI VIN = GND to VCC Output Leakage Current I LO CS = V IH, OE = VIH, V OUT = GND to VCC 10 A I CC x 32 CS = VIL, OE = VIH, f = 5MHz, VCC = 3.6V 520 mA Standby Current I SB CS = VIH, OE = VIH, f = 5MHz, VCC = 3.6V 400 mA Output Low Voltage VOL I OL = 4.0mA 0.4 Output High Voltage VOH I OH = -4.0mA Operating Supply Current (x 32 Mode) 2.4 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V Contact Factory for low power option White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 2 A V V WS1M32V-XG3X AC CHARACTERISTICS (VCC = 3.3V, GND = 0V, T A = -55C to +125C) Parameter Symbol Read Cycle -17 Min Read Cycle Time tRC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time -20 Max 17 Min -25 Max 20 Min 25 17 ns 20 0 Units Max 25 0 0 ns ns t ACS 17 20 25 Output Enable to Output Valid t OE 10 10 12 Chip Select to Output in Low Z t CLZ 1 1 Output Enable to Output in Low Z t OLZ 1 0 Chip Disable to Output in High Z t CHZ 1 12 12 12 ns Output Disable to Output in High Z t OHZ 1 12 12 12 ns 1 1 0 ns ns ns 0 ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 3.3V, GND = 0V, T A = -55C to +125C) Parameter Symbol Write Cycle -17 Min -20 Max Min -25 Max Min Units Max Write Cycle Time t WC 17 20 25 ns Chip Select to End of Write t CW 15 15 17 ns Address Valid to End of Write t AW 15 15 17 ns Data Valid to End of Write t DW 11 12 13 ns Write Pulse Width t WP 15 15 17 ns Address Setup Time t AS 2 2 2 ns Address Hold Time tAH 0 0 0 ns Output Active from End of Write t OW 1 2 3 4 Write Enable to Output in High Z t WHZ 1 Data Hold Time tDH 9 11 0 0 ns 13 0 ns ns 1. This parameter is guaranteed by design but not tested. AC TEST CONDITIONS AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source 3 Typ Unit Input Pulse Levels VIL = 0, VIH = 2.5 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: VZ is programmable from -2V to +7V. I OL & I OH programmable from 0 to 16mA. Tester Impedance Z 0 = 75 y. VZ is typically the midpoint of V OH and V OL . IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS1M32V-XG3X TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 4 tDH WS1M32V-XG3X PACKAGE 511: 84 LEAD, CERAMIC QUAD FLAT PACK (G3) The WEDC 84 lead G3 CQFP fills the same fit and function as the JEDEC 84 lead CQFJ or 84 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form. 1.146" ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 5 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS1M32V-XG3X ORDERING INFORMATION W S 1M32 V - XX G3 X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military C = Commercial I = Industrial -55C to +125C -40C to +85C 0 to +70C PACKAGE TYPE: G3 = 28 mm CQFP (Package 511) ACCESS TIME (ns) Low Voltage Supply 3.3V 10% ORGANIZATION, two banks of 512Kx32 User configurable as 2Mx16 or 4Mx8 SRAM WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 6