WS1M32V-17G3MX - White Electronic Designs

1White Electronic Designs Corporation  (602) 437-1520  www.whiteedc.com

HI-RELIABILITY PRODUCT

WS1M32V-XG3X

12

13

14

15

16

17

18

19

20

21

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23

24

25

26

27

28

29

30

31

32

74

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66

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61

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54

9

V

CC

A

0

A

1

A

2

A

3

A

4

A

5

A

6

OE

1

OE

2

OE

3

OE

4

NC

A

7

A

8

A

9

A

10

A

11

A

12

A

13

GND

V

CC

I/O

0

I/O

1

I/O

2

I/O

3

I/O

4

I/O

5

I/O

6

I/O

7

CS

1

NC

CS

2

I/O

8

I/O

9

I/O

10

I/O

11

I/O

12

I/O

13

I/O

14

I/O

15

GND

NC

WE

4

WE

3

WE

2

WE

1

NC

A

18

A

17

A

16

A

15

A

14

V

CC

GND

I/O

31

I/O

30

I/O

29

I/O

28

I/O

27

I/O

26

I/O

25

I/O

24

NC

I/O

23

I/O

22

I/O

21

I/O

20

I/O

19

I/O

18

I/O

17

I/O

16

V

CC

876543 184838281807978772

37 38 39 40 41 42 43 45 46 47 48 49 50 51 52 5344

76 75

11 10

33 34 35 36

1Mx32 SRAM 3.3V MODULE PRELIMINARY*

FEATURES

nAccess Times of 17, 20, 25ns

n 84 lead, 28mm CQFP, (Package 511)

nOrganized as two banks of 512Kx32, User

Configurable as 2Mx16 or 4Mx8

nCommercial, Industrial and Military Temperature

Ranges

nTTL Compatible Inputs and Outputs

PIN CONFIGURATION FOR WS1M32V-XG3X

PIN DESCRIPTION

I/O0-31 Data Inputs/Outputs

A0-18 Address Inputs

WE1-4 Write Enables

CS1-2 Chip Selects

OE1-4 Output Enables

VCC +3.3V Power Supply

GND Ground

NC Not Connected

TOP VIEW

n3.3 Volt Power Supply

nLow Power CMOS

nBuilt-in Decoupling Caps and Multiple Ground

Pins for Low Noise Operation

nWeight

WS1M32V-XG3X - 20 grams typical

* This data sheet describes a product under development, not

fully characterized, and is subject to change without notice.

February 2001 Rev. 5

BLOCK DIAGRAM

8

I/O0-7

CS1

I/O8-15

CS2

I/O16-23 I/O24-31

A0-18

WE1

8

2M x 8

8

512K x 8

8

512K x 8

2M x 8 512K x 8

512K x 8

2M x 8 512K x 8

512K x 8

2M x 8 512K x 8

512K x 8

OE1WE2

OE2WE3

OE3WE4

OE4

NOTE: CS1& CS2 are used as bank select

The WEDC 84 lead G3 CQFP fills

the same fit and function as the

JEDEC 84 lead CQFJ or 84 PLCC.

But the G3 has the TCE and lead

inspection advantage of the CQFP

form.

1.146"

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WS1M32V-XG3X

CS OE WE Mode Data I/O Power

H X X Standby High Z Standby

L L H Read Data Out Active

L X L Write Data In Active

L H H Out Disable High Z Active

TRUTH TABLEABSOLUTE MAXIMUM RATINGS

Parameter Symbol Min Max Unit

Operating Temperature TA -55 125 °C

Storage Temperature TSTG -65 +150 °C

Signal Voltage Relative to GND VG -0.5 4.6 V

Junction Temperature TJ 150 °C

Supply Voltage VCC -0.5 4.6 V

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Max Unit

Supply Voltage VCC 3.0 3.6 V

Input High Voltage VIH 2.2 VCC + 0.3 V

Input Low Voltage VIL -0.3 +0.8 V

DC CHARACTERISTICS

(VCC = 3.3V ± 0.3V, TA = -55°C to +125°C)

Parameter Sym Conditions Units

Min Max

Input Leakage Current ILI VIN = GND to VCC 10 µA

Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA

Operating Supply Current (x 32 Mode) ICC x 32 CS = VIL, OE = VIH, f = 5MHz, VCC = 3.6V 520 mA

Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, VCC = 3.6V 400 mA

Output Low Voltage VOL IOL = 4.0mA 0.4 V

Output High Voltage VOH IOH = -4.0mA 2.4 V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

Contact Factory for low power option

CAPACITANCE

(TA = +25°C)

Parameter

Symbol

Conditions Max Unit

OE1-4 capacitance COE

VIN = 0 V, f = 1.0 MHz

20 pF

WE1-4 capacitance CWE

VIN = 0 V, f = 1.0 MHz

20 pF

CS1-2 capacitance CCS

VIN = 0 V, f = 1.0 MHz

50 pF

Data I/O capacitance CI/O

VI/O = 0 V, f = 1.0 MHz

20 pF

Address input capacitance CAD

VIN = 0 V, f = 1.0 MHz

70 pF

This parameter is guaranteed by design but not tested.

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WS1M32V-XG3X

NOTES:

VZ is programmable from -2V to +7V.

IOL & IOH programmable from 0 to 16mA.

Tester Impedance Z0 = 75 ý.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

I

Current Source

D.U.T.

C = 50 pf

eff

IOL

V

1.5V

(Bipolar Supply)

Z

Current Source OH

AC TEST CONDITIONS

Parameter Typ Unit

Input Pulse Levels VIL = 0, VIH = 2.5 V

Input Rise and Fall 5 ns

Input and Output Reference Level 1.5 V

Output Timing Reference Level 1.5 V

Parameter Symbol -17 -20 -25 Units

Read Cycle Min Max Min Max Min Max

Read Cycle Time tRC 17 20 25 ns

Address Access Time tAA 17 20 25 ns

Output Hold from Address Change tOH 00 0ns

Chip Select Access Time tACS 17 20 25 ns

Output Enable to Output Valid tOE 10 10 12 ns

Chip Select to Output in Low Z tCLZ111 1ns

Output Enable to Output in Low Z tOLZ100 0ns

Chip Disable to Output in High Z tCHZ112 12 12 ns

Output Disable to Output in High Z tOHZ112 12 12 ns

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

AC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

Parameter Symbol -17 -20 -25 Units

Write Cycle Min Max Min Max Min Max

Write Cycle Time tWC 17 20 25 ns

Chip Select to End of Write tCW 15 15 17 ns

Address Valid to End of Write tAW 15 15 17 ns

Data Valid to End of Write tDW 11 12 13 ns

Write Pulse Width tWP 15 15 17 ns

Address Setup Time tAS 22 2ns

Address Hold Time tAH 00 0ns

Output Active from End of Write tOW123 4ns

Write Enable to Output in High Z tWHZ191113ns

Data Hold Time tDH 00 0ns

1. This parameter is guaranteed by design but not tested.

AC TEST CIRCUIT

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WS1M32V-XG3X

WS32K32-XHX

TIMING WAVEFORM - READ CYCLE

WRITE CYCLE - CS CONTROLLED

ADDRESS

DATA I/O

WRITE CYCLE 2, CS CONTROLLED

tAW

tAS tCW tAH

tWP

tDH

tDW

tWC

CS

WE

DATA VALID

ADDRESS

DATA I/O

READ CYCLE 2 (WE = V

IH

)

tAA

tACS

tOE

tCLZ

tOLZ tOHZ

tRC

DATA VALID

HIGH IMPEDANCE

CS

OE

tCHZ

ADDRESS

DATA I/O

READ CYCLE 1 (CS = OE = VIL, WE = VIH)

t

AA

t

OH

t

RC

DATA VALIDPREVIOUS DATA VALID

ADDRESS

DATA I/O

WRITE CYCLE 1, WE CONTROLLED

t

AW

t

CW

t

AH

t

WP

t

DW

t

WHZ

t

AS

t

OW

t

DH

t

WC

DATA VALID

CS

WE

WRITE CYCLE - WE CONTROLLED

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WS1M32V-XG3X

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 511: 84 LEAD, CERAMIC QUAD FLAT PACK (G3)

The WEDC 84 lead G3

CQFP fills the same fit

and function as the

JEDEC 84 lead CQFJ or

84 PLCC. But the G3 has

the TCE and lead inspec-

tion advantage of the

CQFP form.

1.146"

6White Electronic Designs Corporation  (602) 437-1520  www.whiteedc.com

WS1M32V-XG3X

ORDERING INFORMATION

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

DEVICE GRADE:

M = Military -55°C to +125°C

C = Commercial -40°C to +85°C

I = Industrial 0° to +70°C

PACKAGE TYPE:

G3 = 28 mm CQFP (Package 511)

ACCESS TIME (ns)

Low Voltage Supply 3.3V ± 10%

ORGANIZATION, two banks of 512Kx32

User configurable as 2Mx16 or 4Mx8

SRAM

WHITE ELECTRONIC DESIGNS CORP.

W S 1M32 V - XX G3 X X