CEM4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 ABSOLUTE MAXIMUM RATINGS 1 1 2 3 4 S1 G1 S2 G2 TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 -40 Units V Gate-Source Voltage VGS 20 20 V ID 6.1 -4.3 A IDM 24 -17 A Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RJA 62.5 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 2. 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CEM4279 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 40V, VGS = 0V 1 A IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250A 3 V VGS = 10V, ID = 6.1A 1 25 32 m VGS = 4.5V, ID = 4.9A 35 46 m Dynamic Characteristics d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5V, ID = 6.1A VDS = 20V, VGS = 0V, f = 1.0 MHz 3 S 1050 pF 155 pF 95 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 20V, ID = 6.1A, VGS = 10V, RGEN =3 14 30 ns 10 20 ns 17 35 ns Turn-Off Fall Time tf 18 35 ns Total Gate Charge Qg 10.1 13 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 20V, ID = 6.1A, VGS = 4.5V 3.5 nC 4.0 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 6.1 A 1.0 V CEM4279 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250A -40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -40V, VGS = 0V -1 A IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics VGS = VDS, ID = -250A -3 V VGS = -10V, ID = -4.3A -1 55 66 m VGS = -4.5V, ID = -3.7A 85 105 m d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -5V, ID = -4.3A VDS = -20V, VGS = 0V, f = 1.0 MHz 7 S 705 pF 125 pF 75 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6 13 26 ns 3 6 ns 31 62 ns Turn-Off Fall Time tf 5 10 ns Total Gate Charge Qg 5.6 7.4 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -20V, ID = -4.3A, VGS = -4.5V 2.1 nC 2.3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 -4.3 A -1.2 V 5 CEM4279 N-CHANNEL 15 20 VGS=4V 16 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V 12 8 VGS=3V 4 12 5 9 6 25 C 3 TJ=125 C 0 0 1 2 3 4 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 750 500 Coss 250 Crss 0 5 10 15 20 2.2 5 1.9 ID=6.1A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 25 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 2. Transfer Characteristics 1000 ID=250A 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 1. Output Characteristics Ciss 1.2 2 VGS, Gate-to-Source Voltage (V) 1250 0 1 VDS, Drain-to-Source Voltage (V) 1500 1.3 -55 C 0 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM4279 P-CHANNEL 10 -VGS=10,8V 20 -VGS=5.0V 15 10 8 -ID, Drain Current (A) -ID, Drain Current (A) 25 -VGS=4.0V 5 6 4 25 C 2 TJ=125 C 0 0 0.5 1 1.5 2 0 2.5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 Coss 150 Crss 0 5 10 15 20 25 5 2.2 1.9 ID=-4.3A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 2. Transfer Characteristics Ciss ID=-250A 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 1. Output Characteristics 600 1.2 2 -VGS, Gate-to-Source Voltage (V) 750 1.3 1 -VDS, Drain-to-Source Voltage (V) 900 0 0 -55 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 CEM4279 5 V =20V DS ID=6.1A 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 3 2 1 0 0 2 4 6 8 10 12 10 0 10 -1 10 -2 1ms 10ms 100ms 1s DC 10 10 -2 10 -1 10 0 10 1 2 10 2 RDS(ON)Limit 3 2 1 1.2 5 TA=25 C TJ=150 C Single Pulse Figure 14. Maximum Safe Operating Area -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 1 Figure 13. Gate Charge VDS=-20V ID=-4.3A 0 10 RDS(ON)Limit VDS, Drain-Source Voltage (V) 4 0 2 Qg, Total Gate Charge (nC) P-CHANNEL 5 10 2.4 3.6 4.8 10 1ms 10ms 10 0 10 -1 10 6 1 -2 10 100ms 1s DC TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 10 2 CEM4279 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 5 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 17. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. RJA (t)=r (t) * RJA 2. RJA=See Datasheet 3. TJM-TA = P* RJA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 1 10 2