Details are subject to change without notice .
40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation
VDS
VGS
ID
PD
IDM
40
2.0
24
6.1
±20
V
W
A
A
V
1
SO-8
1
P-Channel
-40
-17
-4.3
±20
CEM4279
http://www.cetsemi.com
5
Rev 2. 2007.Jan
RDS(ON) = 46mΩ @VGS = 4.5V.
-40V, -4.3A, RDS(ON) = 66mΩ @VGS = -10V.
RDS(ON) = 105mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface mount Package.
Lead free product is acquired.
D1 D1 D2 D2
S1 G1 S2 G2
1 2 3 4
8 7 6 5
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient b
Parameter Symbol Limit Units
C/W62.5RθJA
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forward Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
32
1 3
-100
100
1
mΩ
V
nA
nA
µA
V
S
2
Gate Body Leakage Current, Reverse
On Characteristics c
Dynamic Characteristics d
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ Max
40
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.1A
VGS = 4.5V, ID = 4.9A
VDS = 5V, ID = 6.1A
VDD = 20V, ID = 6.1A,
VGS = 10V, RGEN =3Ω
VDS = 20V, ID = 6.1A,
VGS = 4.5V
VDS = 20V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 1.0A
1050
155
95
14
10
17
18
30
20
35
35
10.1
3.5
4.0
13
6.1
1.0
3
46 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
25
35
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CEM4279
CEM4279
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forward Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
6655
-1 -3
-100
100
-1
mΩ
V
nA
nA
µA
V
S
3
Gate Body Leakage Current, Reverse
On Characteristics c
Dynamic Characteristics d
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
Test Condition
VGS = 0V, ID = -250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ Max
-40
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.3A
VGS = -4.5V, ID = -3.7A
VDS = -5V, ID = -4.3A
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
VDS = -20V, ID = -4.3A,
VGS = -4.5V
VDS = -20V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = -1.3A
705
125
75
13
3
31
5
26
6
62
10
5.6
2.1
2.3
7.4
-4.3
-1.2
7
10585 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
5
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CEM4279
4
N-CHANNEL
C, Capacitance (pF)
ID, Drain Current (A)
ID, Drain Current (A)
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
VTH, Normalized
Gate-Source Threshold Voltage
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
-50 -25 0 25 50 75 100 125 150
IS, Source-drain current (A)
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
0.4 0.6 0.8 1.0
100
10-1
101
1.41.2
VGS=0V
5
Ciss
Coss
Crss
1500
1250
1000
750
500
250
00 5 10 15 20 25
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS=10V
ID=6.1A
-100 -50 0 50 100 150 200
15
12
9
6
3
00 2 51 43
25 C
-55 C
TJ=125 C
20
16
12
8
4
00 1 24
VGS=3V
VGS=4V
3
VGS=10,8,6,5V
CEM4279
5
P-CHANNEL
-ID, Drain Current (A)
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS=-10V
ID=-4.3A
-100 -50 0 50 100 150 200
VTH, Normalized
Gate-Source Threshold Voltage
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=-250µA
-50 -25 0 25 50 75 100 125 150
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
-IS, Source-drain current (A)
0.4 0.6 0.8 1.0
100
10-1
101
1.41.2
VGS=0V
C, Capacitance (pF)
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
Ciss
Coss
Crss
900
750
600
450
300
150
0
0 5 10 15 20 25
10
8
6
4
2
0
0 2 51 43
25 C
-55 C
TJ=125 C
-ID, Drain Current (A)
0 0.5 2 2.51.51
0
25
20
15
10
5
-VGS=4.0V
-VGS=5.0V
-VGS=10,8V
CEM4279
6
N-CHANNEL
VGS, Gate to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
ID, Drain Current (A)
P-CHANNEL
-VGS, Gate to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 15. Gate Charge
-VDS, Drain-Source Voltage (V)
Figure 16. Maximum Safe
Operating Area
-ID, Drain Current (A)
5
5
4
3
2
1
0
0 2 4 8 12
VDS=20V
ID=6.1A
6 10
102
101
100
10-1
10-2
102
101
100
10-1
10-2
RDS(ON)Limit
Single Pulse
TA=25 C
TJ=150 C
1s
100ms
10ms
1ms
DC
4
3
2
1
0
0 1.2 4.8 62.4 3.6
VDS=-20V
ID=-4.3A
5
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
102
101
100
10-1
10-2
102
101
100
10-1
10-2
Single Pulse
TA=25 C
TJ=150 C
RDS(ON)Limit
100ms
DC
10ms
1ms
1s
CEM4279
7
Figure 17. Switching Test Circuit Figure 18. Switching Waveforms
t
V
V
tt
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
INVERTED
VDD
R
D
V
VR
S
V
G
GS
IN
GEN
OUT
L
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pulse Duration (sec)
Figure 19. Normalized Thermal Transient Impedance Curve
5
Single Pulse
0.02
0.05
0.1
0.2
D=0.5
100
10-1
10-2
10-4 101102
100
10-1
10-2
10-3
PDM
t1t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2