www.vishay.com For technical questions, contact: efi@vishay.com Document Number: 61078
48 Revision: 14-Mar-08
QFM
Vishay Electro-Films
Thin Film, Top-Contact Resistor
CHIP
RESISTORS
The QFM series tantulum nitride on quartz single-value
resistor chips offer a small size, wide ohmic value range and
excellent frequency response.
The QFMs tantalum nitride resistor material offers excellent
resistance to high moisture environments.
The QFMs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The QFMs are 100 % electrically tested and
visually inspected to MIL-STD-883.
FEATURES
•Wire bondable
•Small size, 0.020 inches square
•Resistance range: 1.0 Ω to 1 MΩ
•DC power rating: 25 mW
•Quartz substrate: < 0.1 pF shunt capacitance
•Resistor material: Tantalum nitride, self passivating
•Moisture resistant
APPLICATIONS
The QFM top-contact resistor chips are designed to handle substantial power loads in many types of hybrid packages. They are
ideally suited for this purpose because of their small size.
Product may not
be to scale
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
PROCESS CODE
CLASS H* CLASS K*
103 107
101 105
102 106
100 104
Aluminum terminations
*MIL-PRF-38534 inspection criteria
1 Ω
0.1 %
Tightest Standard Tolerance Available
± 25 ppm/°C
± 250 ppm/°C
± 50 ppm/°C
1 MΩ
± 100 ppm/°C
1 % 0.5 %
10 Ω30 Ω100 Ω200 kΩ430 kΩ620 kΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Noise, MIL-STD-202, Method 308
100 Ω - 250 kΩ
< 100 Ω or > 251 kΩ
- 35 dB typ.
- 20 dB typ.
Moisture Resistance, MIL-STD-202, Method 106 ± 0.5 % max. ΔR/R
Stability, 1000 h, + 125 °C, 125 mW ± (0.25 % + 0.01 Ω) max. ΔR/R
Operating Temperature Range- 55 °C to + 125 °C
Thermal Shock, MIL-STD-202,
Method 107, Test Condition F ± 0.25 % max. ΔR/R
High Temperature Exposure, + 150 °C, 100 h ± 0.5 % max. ΔR/R
Dielectric Voltage Breakdown 200 V
Insulation Resistance 1012 min.
Operating Voltage100 V max.
DC Power Rating at + 70 °C (Derated to Zero at + 175 °C) 25 mW
5 x Rated Power Short-Time Overload, + 25 °C, 5 s ± 0.25 % max. ΔR/R