2N6107
2N6111
SILICON PNP SWITCHING TRANSISTORS
■SGS -THO MS ON PRE F ERRE D SALES T YP E S
■PNP TRANS IS TORS
APPLICATIONS:
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6107 and 2N6111 are epitaxial-base PNP
silicon transistors in Jedec TO-220 plastic
package. They are intended for a wide variety of
medium power switching and linear applications.
INTERNAL SCHEMATI C DIAG RAM
June 1997
123
TO-220
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
2N6107 2N6111
VCBO Collector-Base Voltage (IE = 0) 80 40 V
VCEX Collector-Emitter Voltage (RBE = 100 Ω)8040V
V
CEO Collector-Emitter Voltage (IB = 0) 70 30 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 7 A
IBBase Current 3 A
Ptot Total Dissipation at Tc = 25 oC40W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP devi ces voltage and current values are negative
1/4
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 3.12 oC/W
Rthj-amb Thermal Resistance Junction-ambient Max 70 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = - 1.5V) for 2N6107 VCE = 80 V
for 2N6111 VCE = 40 V
TC = 150 oC
for 2N6107 VCE = 70 V
for 2N6111 VCE = 30 V
0.1
0.1
2
2
mA
mA
mA
mA
ICEO Collector Cut-off
Current (IB = 0) for 2N6107 VCE = 60 V
for 2N6111 VCE = 20 V 1
1mA
mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-emitter
Sustaining Voltage IC = 0.1 A
for 2N6107
for 2N6111 70
30 V
V
VCER(sus)∗Collector-emitter
Sustaining Voltage IC = 0.1 A RBE = 100 Ω
for 2N6107
for 2N6111 80
40 V
V
VCE(sat)∗Collector-emitter
Saturation Voltage IC = 3 A IB = 0.3 A for 2N6107
IC = 2 A IB = 0.2 A for 2N6111
IC = 7 A IB = 3.0 A
1
1
3.5
V
V
V
VBE(on)∗Base-emitter Voltage IC = 3 A VCE = 4 V for 2N6107
IC = 2 A VCE = 4 V for 2N6111
IC = 7 A VCE = 4 V
1.5
1.5
3
V
V
V
hFE∗DC Current Gain IC = 3 A VCE = 4 V for 2N6107
IC = 2 A VCE = 4 V for 2N6111
IC = 7 A VCE = 4 V
30
30
2.3
150
150
hfe Small Signal Current
Gain IC = 0.5 A VCE = 4 V f = 50 KHz 20
fTTransition-Frequency IC = 0.5 A VCE = 4 V 4 MHz
Ccbo Collector-base
Capacitance VCB = 10 V f = 1 MHz 250 pF
∗ P ulsed: P ulse duratio n = 300 µs, duty cy cle 1.5 %.
For PNP types volt ag e and cu rrent values are negativ e.
For characte ristic curves see the bd534 (PNP) se ries.
2N6107/2N6111
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
2N6107/2N6111
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for th e
conse quences of us e of s uch information nor for any infringement of patents or othe r rights of third part ies which may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro electronics . Specificati ons ment ioned
in this publicat ion are subject to change without noti ce. This publicat ion su persedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support dev ices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectr onics - Printed in Italy - All Right s Reserved
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
Australia - Braz il - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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. . .
2N6107/2N6111
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