Silicon Phototransistor
SDP8406
DESCRIPTION
FEATURES
Side-looking plastic package
•
50¡ (nominal) acceptance angle
•
Wide sensitivity ranges
•
Mechanically and spectrally matched to
SEP8506 and SEP8706 infrared emitting diodes
•
The SDP8406 is an NPN silicon phototransistor molded
in a side-looking clear plastic package. The chip is
positioned to accept radiation through a plastic lens
from the side of the package.
DIM_017.ds4
INFRA-21.TIF
OUTLINE DIMENSIONS
in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
120
Silicon Phototransistor
SDP8406
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
100 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
121
Silicon Phototransistor
SDP8406
SWITCHING TIME TEST CIRCUIT
cir_015.cdr
SWITCHING WAVEFORM
cir_004.cdr
Responsivity vs
Angular Displacement
gra_054.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
r
e
s
p
o
n
s
e
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60
-45
-30
-15
0
+15
+30
+45
+60
Fig. 1
Collector Current vs
Ambient Temperature
gra_039.ds4
Ambient temperature - °C
N
o
r
m
a
l
i
z
e
d
c
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
0.0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
60
70
80
Fig. 2
Dark Current vs
Temperature
gra_301.cdr
Fig. 3
Non-Saturated Switching Time vs
Load Resistance
gra_041.ds4
Load resistance - Ohms
R
e
s
p
o
n
s
e
t
i
m
e
-
µ
s
1
10
100
10
100
1000
10000
Fig. 4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
122
Silicon Phototransistor
SDP8406
Spectral Responsivity
gra_036.ds4
Wavelength - nm
R
e
l
a
t
i
v
e
r
e
s
p
o
n
s
e
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
400
600
800
1000
1200
Fig. 5
Coupling Characteristics
with SEP8506
gra_031.ds4
Lens-to-lens separation - inches
L
i
g
h
t
c
u
r
r
e
n
t
-
m
A
0.1
0.2
0.4
0.6
1.0
2
4
6
10
0.01
0.02
0.05
0.1
0.2
0.5
1.0
I
F
= 20 mA
V
CE
= 5V
T
A
= 25 °C
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
123
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