Semiconductor Components Industries, LLC, 2001
November, 2000 – Rev. 1 1Publication Order Number:
BAT54HT1/D
BAT54HT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
•Extremely Fast Switching Speed
•Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
•Device Marking: JV
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board,
(Note 1.)
TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient RJA 635 °C/W
Junction and Storage Temperature TJ, Tstg 150 °C
1. FR–4 Minimum Pad
30 VOLT SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
Device Package Shipping
ORDERING INFORMATION
BAT54HT1 SOD–323 3000/Tape & Reel
http://onsemi.com
PLASTIC
SOD–323
CASE 477
2
1
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE 2
ANODE
JV 21
MARKING
DIAGRAM
BAT54HT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 30 — — Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT— 7.6 10 pF
Reverse Leakage (VR = 25 V) IR— 0.5 2.0 µAdc
Forward Voltage (IF = 0.1 mAdc) VF— 0.22 0.24 Vdc
Forward Voltage (IF = 30 mAdc) VF— 0.41 0.5 Vdc
Forward Voltage (IF = 100 mAdc) VF— 0.52 0.8 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns
Forward Voltage (IF = 1.0 mAdc) VF— 0.29 0.32 Vdc
Forward Voltage (IF = 10 mAdc) VF— 0.35 0.40 Vdc
Forward Current (DC) IF— — 200 mAdc
Repetitive Peak Forward Current IFRM — — 300 mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc
BAT54HT1
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3
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820 Ω
0.1 µF
DUT
VR
100 µH
0.1 µF
50 Ω Output
Pulse
Generator
50 Ω Input
Sampling
Oscilloscope
t
rtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0 0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 5101520
25
14
0VR, REVERSE VOLTAGE (VOLTS)
12
4
2
051015 30
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
–40°C
25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.6
–55°C
150°C
125°C
100
1000
30
2520
6
8
10
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
CT, TOATAL CAPACITANCE (pF)
BAT54HT1
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4
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE B
0.63 mm
0.025
1.60 mm
0.063
2.85 mm
0.112
0.83 mm
0.033
mm
inches
SOD–323
Soldering Footprint
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.60 1.80 0.063 0.071
B1.15 1.35 0.045 0.053
C0.80 1.00 0.031 0.039
D0.25 0.40 0.010 0.016
E0.15 REF 0.006 REF
H0.00 0.10 0.000 0.004
J0.089 0.177 0.0035 0.0070
K2.30 2.70 0.091 0.106
NOTE 3
A
K
12
DB
E
H
C
JSTYLE 1:
PIN 1. CATHODE
2. ANODE
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BAT54HT1/D
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