DXT651Q 60V NPN LOW SATURATION POWER TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > 60V IC = 3A High Continuous Collector Current ICM up to 6A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(SAT) < 300mV @ 1A Complementary PNP Type: DXT751Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT89 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.052 grams (Approximate) Applications Load Management Functions Motor Control DC-DC / DC-AC Converters C SOT89 E B C C B E Top View Device Symbol Top View Pinout Ordering Information (Notes 4 and 5) Product DXT651Q-13 Notes: Compliance Automotive Marking KN2 Reel Size (inches) 13 Tape Width (mm) 12 Quantity Per Reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT89 YWW KN2 DXT651Q Document Number: DS38910 Rev: 1 - 2 KN2 = Product Type Marking Code = Manufacturer's Marking Code YWW = Date Code Marking Y = Last Digit of Year (ex: 6 = 2016) WW = Week Code (01 to 53) 1 of 6 www.diodes.com July 2016 (c) Diodes Incorporated DXT651Q Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 80 60 5 3 6 500 Unit V V V A A mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Notes: Value 1 2 125 62.5 6.0 -55 to +150 PD RJA RJL TJ, TSTG Unit W C/W C/W C 6. For a device surface mounted on 15mm x 15mm x 0.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in steady state condition. 7. Same as note 6, except the device is mounted on 40mm x 40mm x 1.6mm FR-4 PCB. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Resistance ( C/W) 1.0 o Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 120 100 80 D=0.5 60 40 D=0.05 20 0 100 100 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) o Temperature ( C) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) Single Pulse D=0.2 100 o Single Pulse. T A =25 C 10 1 100 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation DXT651Q Document Number: DS38910 Rev: 1 - 2 2 of 6 www.diodes.com July 2016 (c) Diodes Incorporated DXT651Q Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 80 60 5 V V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 9) IEBO 0.1 10 0.1 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(SAT) VBE(ON) 0.08 0.23 0.85 0.8 0.3 0.6 1.25 1 V V V V hFE 70 100 80 40 200 200 185 120 300 fT Cobo tON tOFF 140 200 35 230 30 MHz pF ns ns DC Current Gain SMALL-SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Switching Times A IC = 100A IC = 10mA IE = 100A VCB = 60V VCB = 60V, TA = +100C VEB = 4V IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VCE = 2V, IC = 50mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 5V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz VCC = 10V. IC = 500mA, IB1 = -IB2 = 50mA 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. Note: 2.5 500 VCE = 2V 450 IB = 10mA 2.0 400 IB = 8mA 1.5 N IA G T N E R R U C C D ,E F h hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) A Test Conditions IB = 6mA 1.0 IB = 4mA 0.5 350 300 TA = 85C 250 200 TA = 25C 150 100 IB = 2mA TA = 150C TA = -55C 50 0.0 0 1 2 3 4 5 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 1 Typical Collector Current vs. Collector-Emitter Voltage DXT651Q Document Number: DS38910 Rev: 1 - 2 3 of 6 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 2 Typical DC Current Gain vs. Collector Current July 2016 (c) Diodes Incorporated DXT651Q IC/IB = 20 R E T T I M E R O T C E L L O C , )T ) V ( 0.3 E G A T L O V N 0.2 O I T A R U AT S A (E S 0.1 C V TA = 150C TA = 85C TA = 25C TA = -55C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current V V 0.0 0.0001 VCE = 2V 1.0 0.8 TA = -55C 0.6 TA = 25C 0.4 TA = 85C 0.2 TA = 150C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 100 1.2 IC/I B = 20 1.0 Cobo, OUTPUT CAPACITANCE (pF) VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) A S (E B 1.2 O ( E B 0 0.0001 )V ( E G A T L O V N O I T A R U T A S R E T T I M E E S A B , )T )V ( E G A T L O V N O -N R U T R E T T I M E E S A B ,N ) VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.4 0.8 TA = -55C 0.6 TA = 25C 0.4 TA = 85C 0.2 TA = 150C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 5 Typical Base-Emitter Saturation Voltage vs. Collector Current f = 1MHz 80 60 40 20 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 6 Typical Output Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 175 150 125 100 75 50 VCE = 2V f = 100MHz 25 0 0 20 40 60 80 100 IC, EMITTER CURRENT (mA) Figure 7 Typical Gain-Bandwidth Product vs. Emitter Current DXT651Q Document Number: DS38910 Rev: 1 - 2 4 of 6 www.diodes.com July 2016 (c) Diodes Incorporated DXT651Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. D1 0 .20 c R0 SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.327 0.527 0.427 z 0.20 0.40 0.30 All Dimensions in mm H E B1 L B e D2 8 (4 X) H1 E2 A L1 D z Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2 Dimensions Y3 Y1 Y4 X Y C G X X1 X2 Y Y1 Y2 Y3 Y4 G Y2 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 X1 C DXT651Q Document Number: DS38910 Rev: 1 - 2 5 of 6 www.diodes.com July 2016 (c) Diodes Incorporated DXT651Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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