230A
PHASE CONTROL THYRISTORS Stud Version
ST230S SERIES
1
Bulletin I25163 rev. B 01/94
www.irf.com
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 230 A
@ TC85 °C
IT(RMS) 360 A
ITSM @ 50Hz 5700 A
@ 60Hz 5970 A
I2t@
50Hz 163 KA2s
@ 60Hz 149 KA2s
VDRM/VRRM 400 to 1600 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST230S Units
Major Ratings and Characteristics
case style
TO-209AB (TO-93)
ST230S Series
2
Bulletin I25163 rev. B 01/94
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ T J = TJ max
VVmA
04 400 500
08 800 900
ST230S 12 1200 1300 30
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 230 A 180 ° conduction, half sine wave
@ Case temperature 85 °C
IT(RMS) Max. RMS on-state current 360 A DC @ 78°C case temperature
ITSM Max. peak, one-cycle 5700 t = 10ms No voltage
non-repetitive surge current 5970 t = 8.3ms reapplied
4800 t = 10ms 100% VRRM
5000 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 16 3 t = 10ms No voltage Initial TJ = TJ max.
148 t = 8.3 ms reapplied
115 t = 10ms 100% VRRM
10 5 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1630 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of on-state
slope resistance
rt2High level value of on-state
slope resistance
VTM Max. on-state voltage 1.55 V Ipk= 720A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILMax. (typical) latching current 1000 (300)
0.92 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.88 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
0.81 (I > π x IT(AV)),TJ = TJ max.
Parameter ST230S Units Conditions
0.98 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 2 5 ° C , anode supply 12V resistive load
A
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, d ig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, T J = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST230S Units Conditions
1000 A/µs
Switching
tqTypical turn-off time 100 µs
tdTypical delay time 1.0
ST230S Series
3
Bulletin I25163 rev. B 01/94
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dv/dt Maximum critical rate of rise of
off-state voltage
IDRM Max. peak reverse and off-state
IRRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST230S Units Conditions
30 mA TJ = TJ max, rated VDRM/VRRM applied
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 31
(275)
24.5
(210)
wt Approximate weight 280 g
Case style TO - 209AB (TO-93) See Outline Table
Parameter ST230S Units Conditions
0.10 D C operation
0.04 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
PGM Maximum peak gate power 10.0 TJ = TJ max, t p ≤ 5ms
PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required T J = - 40°C
to trigger m A T J = 25°C
TJ = 125°C
VGT DC gate voltage required T J = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 m A
Parameter ST230S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 - Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VT
J = TJ max, tp ≤ 5ms
°C
K/W
Nm
(lbf-in)
Non lubricated threads
Lubricated threads
ST230S Series
4
Bulletin I25163 rev. B 01/94
www.irf.com
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Ordering Information Table
180° 0.016 0.012 TJ = TJ max.
120° 0.019 0.020
90° 0.025 0.027 K/W
60° 0.036 0.037
30° 0.060 0.060
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- P = Stud base 16UNF threads
M = Stud base metric threads (M16 x 1.5)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
8- V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
9- Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Device Code
51234
ST 23 0 S 16 P 0
7
698
ST230S Series
5
Bulletin I25163 rev. B 01/94
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Fast-on Terminals
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
Outline Table
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (8.26) 10 (0.39)
C.S. 0.4mm
(0.0006 s.i.)
38.5 (1.52)
MAX.
+
-
220 (8.66) 10 (0.39)
CERAMIC HOUSING
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
C.S. 25mm 2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22 (0.86) MIN.
MAX.
35 (1.38) MAX.
3/4"-16UNF-2A *
27.5 (1.08)
SW 32
27.5 (1.08) MAX. DIA.
WHITE GATE
9.5 (0.37) MIN.
16 (0.63) MAX.
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (8.26) 10 (0.39)
C.S. 0.4mm
(0.0006 s.i.)
MAX.
90 (3.54) M IN.
4.3 (0.17) DIA.
19 (0.75) MAX.
38.5 (1.5 2)
MAX.
16 ( 0.63) MAX.
8.5 (0.33) DIA.
+
-
GLASS METAL SEAL
28.5 (1.12) MAX. DIA.
220 (8.66) 10 (0.39)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
SW 32
C.S. 25mm 2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22 (0.86) MIN.
35 (1.38) MAX.
3/4"-16UNF-2A *
27.5 (1.08)
9.5 (0.37) MIN.
WHITE GATE
AMP. 280000-1
REF-250
ST230S Series
6
Bulletin I25163 rev. B 01/94
www.irf.com
Outline Table
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
CERAMIC HOUSING
27.5 (1.08) M AX. 38.5 (1.52) MAX.
3 (0.12)
80 (3.15) MAX.
DIA. 27.5 (1.08) MAX.
16 (0.63) MAX.
FLAG TERMINALS
1.5 (0.06) DIA.
SW 32
22 (0.89)
DIA. 6.5 (0.25)
1 3 (0.51)
14 (0.55)
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3/4"-16UNF-2A*
GLASS-METAL SEAL
2 7.5 (1 .08) MAX . 3 8.5 (1.5 2) MAX .
3 (0.12)
80 (3.1 5) M AX.
DIA. 28.5 (1.12) MAX.
FLAG TERMINALS
1.5 (0.06) DIA.
SW 32
22 (0.89)
DIA. 6.5 (0.25)
13 (0.51)
14 (0.55)
16 (0.63) MAX.
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
ST230S Series
7
Bulletin I25163 rev. B 01/94
www.irf.com
80
90
100
110
120
130
0 50 100 150 200 250
M a x im u m A l lowab le Case T e mper a ture (°C)
30°60° 90° 120° 180°
Av erage On -state Current (A)
Conduction Angle
S T2 3 0S Se r ie s
R (DC) = 0.1 K/W
thJC
70
80
90
100
110
120
130
0 100 200 300 400
DC
30°60° 90°120° 180°
Average On -state Current ( A)
Maximum Allowable Case Temper ature (°C)
Conduction Peri o d
ST230S Series
R (DC) = 0.1 K/W
thJC
Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics
25 50 75 100 125
Max im u m Al lowab l e A m b ient Tem p era tur e (°C)
R = 0.08 K/W - Delta R
thSA
0.1 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
300
350
0
50
100 150 200 250
180°
120°
90°
60°
30°
RMS Limi t
Conduction Angle
Maximu m Averag e On-stat e Power Los s ( W)
Average On-state Current (A)
S T230S Ser ies
T = 125°C
J
25 50 75 100 125
Max imum Allowable Am bient Te mper ature (°C)
R = 0.08 K/W - Delta R
thSA
0.1 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300 350 400
DC
180°
120°
90°
60°
30°
RMS Li mit
Cond uc t ion P eri od
Maximum Average On-state Power Loss (W)
A verage On-state Current ( A)
ST 2 3 0S Series
T = 125°C
J
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
ST230S Series
8
Bulletin I25163 rev. B 01/94
www.irf.com
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
S qua re W av e Pul se Dura tion (s)
thJC
T r an s i en t The r m a l Im p e d an c e Z (K/W)
ST230S Series
Steady State V a lue
R = 0.1 K/W
(DC O perat io n)
thJC
Fig. 8 - Thermal Impedance ZthJC Characteristic
100
1000
10000
0.511.522.533.544.555.5
T = 25°C
J
Instantaneou s On-state Current ( A)
Instant aneous On- state Vo lt age (V)
T = 12 5°C
J
ST230S S eries
Fig. 7 - On-state Voltage Drop Characteristics
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.01 0.1 1
P ulse Tr ain Durat ion (s )
Versus Pulse Train Duration. Control
Pe ak Hal f Sine Wav e On- state Curre nt ( A)
Initial T = 125°C
No Voltage Reapplied
Rat e d V Reapplied
J
RRM
ST230S S er ies
Maximum Non Re pe tit ive Surge Curre nt
Of Conduction May Not Be Maintained.
Fig. 6 - Maximum Non-Repetitive Surge CurrentFig. 5 - Maximum Non-Repetitive Surge Current
2000
2500
3000
3500
4000
4500
5000
5500
110100
Number Of Equal A mplitude Half Cycle Current Pulses (N )
Peak Ha lf S in e W a v e On - s ta te Cur r en t (A )
I nitia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST230S Series
At Any Rated Load C onditio n A nd With
R ated V Applied F ollo wing Surg e.
RRM
ST230S Series
9
Bulletin I25163 rev. B 01/94
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Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj= 125 °C
Tj=-40 °C
(1) (2) (3)
Instanta neous Gate Current (A)
Inst anta neous Gat e Volta ge (V)
a) Recommended load line for
b ) R e com m en de d load lin e for
<=3 0 % rate d di/dt : 10V , 10 o h m s
Frequency Limited by PG(AV)
rated d i/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) P GM = 10W, t p = 4ms
(2) P GM = 20W, t p = 2ms
(3) P GM = 40W, t p = 1ms
(4) P GM = 60W, t p = 0.66ms
Device: ST230S Series
Re ctangu lar gate pul se
(4)
