2SD2353
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2353
Power Amplifier Applications
High DC current gain: hFE = 800 to 3200
Low collector saturation voltage: VCE (sat) = 0.4 V (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 60 V
Emitter-base voltage VEBO 7 V
DC IC 3
Collector current
Pulse ICP 6
A
Base current IB 0.6 A
Ta = 25°C 2
Collector power
dissipation Tc = 25°C
PC
25
W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA SC-67
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
2SD2353
2006-11-21
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Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 60 V, IE = 0 100 μA
Emitter cut-off current IEBO V
EB = 6 V, IC = 0 100 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 60 V
hFE (1) V
CE = 5 V, IC = 0.2 A 800 3200
DC current gain
hFE (2) V
CE = 5 V, IC = 1.5 A 350
Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 10 mA 0.4 1.0 V
Base-emitter voltage VBE V
CE = 5 V, IC = 0.5 A 0.7 1.0 V
Transition frequency fT V
CE = 5 V, IC = 0.5 A 18 MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz 42 pF
Marking
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
D2353
Part No. (or abbreviation code)
2SD2353
2006-11-21
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DC current gain hFE
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
hFE – IC
PC – Ta
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
Tc = 100°C
Common emitter
VCE = 5 V
10000
300
500
1000
3000
5000
25
100
25
0.03 0.1 1 5 3 0.3 0.01
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
0.4
2.0
Common emitter
VCE = 5 V
0
0.5
1.0
1.5
3.0
0.6 1.0 1.4 1.2 0.8 0
Tc = 100°C 25 25
0.2
2.5
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
Tc = 25°C
10000
300
500
1000
3000
5000
100
0.03 0.1 1 5 3 0.3 0.01
VCE = 5 V
10
(1) Ta = Tc
Infinite heat sink
(2) No heat sink
(1)
(2)
0
0
5
15
20
30
35
20 40 80 100 120 140 160
25
10
0.01
0
0
Common emitter
Tc = 25°C
4
2
6 8 10
3
10
50
7 5
2
IB = 0.5 mA
1
20
4 2
1
3
4
25
25
Tc = 100°C
Common emitter
IC/IB = 100
5
0.03
0.05
0.1
0.3
0.5
0.01
0.03 0.1 1 10 3 0.3 0.01
1
3
2SD2353
2006-11-21
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Collector-emitter voltage VCE (V)
Collector current IC (A)
Safe Operating Area
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
0.3 1 3 10 30 100
0.03
0.01
1 ms*
10 ms*
100 ms*
VCEO max
0.3
0.1
3
10
1 DC operation
Tc = 25°C
0.05
0.5
5
Pulse width tw (s)
rth – tw
Transient thermal resistance
rth (°C/W)
0.001 1000 0.01 0.1 100 10 1
100
3
30
10
1
0.3
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(1)
(2)
2SD2353
2006-11-21
5
RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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