IXFN120N65X2 - IXYS - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25C to 150C 650 V

VDGR TJ= 25C to 150C, RGS = 1M650 V

VGSS Continuous  30 V

VGSM Transient  40 V

ID25 TC= 25C 108 A

IDM TC= 25C, Pulse Width Limited by TJM 240 A

IATC= 25C15A

EAS TC= 25C 3.5 J

PDTC= 25C 890 W

dv/dt IS IDM, VDD  VDSS, TJ  150°C 50 V/ns

TJ-55 ... +150 C

TJM 150 C

Tstg -55 ... +150 C

VISOL 50/60 Hz, RMS t = 1 minute 2500 V~

IISOL  1mA t = 1 second 3000 V~

Md Mounting Torque 1.5/13 Nm/lb.in

Terminal Connection Torque 1.3/11.5 Nm/lb.in

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 650 V

VGS(th) VDS = VGS, ID = 8mA 3.5 5.0 V

IGSS VGS =  30V, VDS = 0V 100 nA

IDSS VDS = VDSS, VGS = 0V 50 A

TJ = 125C 5 mA

RDS(on) VGS = 10V, ID = 60A, Note 1 24 m

IXFN120N65X2 VDSS = 650V

ID25 = 108A

RDS(on) 



 24m





DS100690B(03/16)

Features

International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Isolation Voltage 2500 V~

High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low RDS(on)

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

X2-Class HiPerFETTM

Power MOSFET

miniBLOC, SOT-227



E153432

G

D

S

G = Gate D = Drain

S = Source

S

D

G

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN120N65X2

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 120 A

ISM Repetitive, Pulse Width Limited by TJM 480 A

VSD IF = IS , VGS = 0V, Note 1 1.4 V

trr 220 ns

QRM 2.3 μC

IRM 21.0 A

IF = 60A, -di/dt = 100A/s

VR = 100V, VGS = 0V

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max

gfs VDS = 10V, ID = 60A, Note 1 46 76 S

RGi Gate Input Resistance 0.74 

Ciss 14 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 8700 pF

Crss 5.5 pF

Co(er) 455 pF

Co(tr) 1930 pF

td(on) 39 ns

tr 26 ns

td(off) 82 ns

tf 12 ns

Qg(on) 240 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 60A 87 nC

Qgd 65 nC

RthJC 0.14C/W

RthCS 0.05C/W

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 60A

RG = 1(External)

Effective Output Capacitance

Energy related

Time related

VGS = 0V

VDS = 0.8 • VDSS

IXFN120N65X2

Fig. 4. R

DS(on)

Normalized to I

D

= 60A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 120A

I

D

= 60A

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

00.511.522.53

V

DS

- Volts

I

D

- Am peres

V

GS

= 10V

6V

7V

5V

8V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

280

0 5 10 15 20 25

V

DS

- Volts

I

D

- Am peres

V

GS

= 10V

6V

7V

5V

8V

9V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

20

40

60

80

100

120

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

5V

6V

4V

7V

8V

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degr ees Centi grade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

Fig. 5. R

DS(on)

Nor malized to I

D

= 60A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 40 80 120 160 200 240 280

I

A

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN120N65X2

Fig. 11. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160 180 200 220 240

QG - NanoCoulombs

V

GS

- Volts

VDS

= 325V

I D = 60A

I G = 10mA

Fig. 12. Capacitance

1

10

100

1,000

10,000

100,000

1 10 100 1000

VDS - Volts

Capacit a nce - Pi c oFa rad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 7. Maximum Drain Current vs. Case Temperature

0

20

40

60

80

100

120

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centi gra de

I

D

- Am peres

Fig. 8. Input Admittance

0

20

40

60

80

100

120

140

160

180

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

V

GS

- Volts

I

D

- Am peres

T

J

= 125ºC

25ºC

- 40ºC

Fig. 9. Transconductance

0

20

40

60

80

100

120

140

160

0 20 40 60 80 100 120 140 160 180 200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 10. Forward Voltage Drop of Intrinsic Diode

0

50

100

150

200

250

300

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

V

SD

- Volts

I

S

- Am peres

T

J

= 125ºC

T

J

= 25ºC

IXFN120N65X2

IXYS REF: F_120N65X2(X9-S602) 12-14-15

Fig. 15. Maximum Transient Therm al Impedance

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - K / W

Fig. 15 . Maximum Transient Thermal Impedance

aaaaa

0.3

Fig. 13. Output Capacitance Stored Energy

0

10

20

30

40

50

60

70

80

90

100

0 100 200 300 400 500 600

VDS - Volts

EOSS - MicroJoules

Fig. 14. Forward-Bias Safe Operating Area

0.01

0.1

1

10

100

1000

10 100 1,000

VDS - Volts

ID - Amperes

T

J

= 150ºC

T

C

= 25ºC

Singl e Pul s e

25µs

100µs

R

DS(

on

)

Limit

1ms

10ms

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