04/02/03
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IRF840A
TO
-
220AB
SMPS MOSFET
HEXFET® Power MOSFET
lSwitch Mode Power Supply ( SMPS )
lUninterruptable Power Supply
lHigh speed power switching
Benefits
Applications
lLow Gate Charge Qg results in Simple
Drive Requirement
lImproved Gate, Avalanche and dynamic
dv/dt Ruggedness
lFully Characterized Capacitance and
Avalanche Voltage and Current
VDSS Rds(on) max ID
500V 0.85Ω8.0A
Typical SMPS Topologies:
l Two Transistor Forward
l Haft Bridge
l Full Bridge
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A
IDM Pulsed Drain Current 32
PD @TC = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
lEffective Coss Specified (See AN1001)
PD- 91900B
S
D
G
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 3.7 ––– ––– S VDS = 50V, ID = 4.8A
QgTotal Gate Charge –– – –– – 38 ID = 8.0A
Qgs Gate-to-Source Charge ––– ––– 9.0 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 18 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 250V
trRise Time ––– 23 ––– ID = 8.0A
td(off) Turn-Off Delay Time ––– 26 ––– RG = 9.1Ω
tfFall Time ––– 19 ––– R D = 31Ω,See Fig. 10
Ciss Input Capacitance ––– 1018 ––– VGS = 0V
Coss Output Capacitance ––– 155 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 8. 0 ––– p F ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 42 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 56 ––– VGS = 0V, VDS = 0V to 400V
Static @ TJ = 25°C (unless otherwise specified)
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 510 mJ
IAR Avalanche Current––– 8.0 A
EAR Repetitive Avalanche Energy––– 13 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V
trr Reverse Recovery Time ––– 422 633 ns TJ = 25°C, IF = 8.0A
Qrr Reverse RecoveryCharge ––– 2.16 3.24 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
8.0
32
A
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.0
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient 62
Thermal Resistance
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.85 ΩVGS = 10V, ID = 4.8A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 500V , VGS = 0V
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
IRF840A
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Juncti on Temperature ( C )
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
7.4A
8.0
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
010 20 30 40
0
4
8
12
16
20
Q , Total Ga te Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
7.4 A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
V ,Sour ce- t o-Dr ain Voltage ( V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Sou rce Vol tage (V)
I , Drain Cur rent (A)I , Drain Cur rent (A)
DS
D
10us
100us
1ms
10ms
8.0
110 100 1000
VDS, Drain-to-Source Voltage ( V)
1
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= Cds + Cgd
IRF840A
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Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pul s e Durati on ( sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF840A
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QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
25 50 75 100 125 150
0
200
400
600
800
1000
1200
Star t ing T , Junct ion Tem per at ur e ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
3.6A
5.1A
8.0A
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IAV , Avalanche Current ( A)
520
540
560
580
600
V DSav , Avalanche Voltage ( V )
IRF840A
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF840A
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LEAD ASSIGN M ENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0. 55 (. 022)
0. 46 (. 018)
2.92 (.115)
2.64 (.104)
4.6 9 (. 185)
4.2 0 (. 165)
3X 0.93 (.037 )
0.69 (.027 )
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255 )
6.10 (.240 )
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.60 0)
14.84 (.58 4)
14. 0 9 (.555)
13. 4 7 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.3 6 (.014 ) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : T H IS IS AN IRF1 010
W ITH ASSEMBLY
LOT CODE 9B1M
ASSEMBL Y
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9B 1M
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 8.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 16 mH
RG = 25Ω, IAS = 8.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% V DSS
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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