SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5337
Issue 3
Page 1 of 3
2N3879
• High Power
• Hermetic TO-66 Metal Package
• Ideally suited for High Current,
High Speed Switching Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 120V
VCEO Collector – Emitter Voltage 75V
VEBO Emitter – Base Voltage 7V
IC Continuous Collector Current 7A
IB Base Current 5A
PD Total Power Dissipation at TC = 25°C 30W
Derate Above 25°C 0.17W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC Thermal Resistance, Junction To Case 5.83 °C/W
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3879
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5337
Issue 3
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 20mA IB = 0 75 V
ICEO Collector Cut-Off Current VCE = 50V IB = 0 5
ICEX Collector Cut-Off Current VCE = 100V VBE = -1.5V 4
ICBO Collector Cut-Off Current VCB = 120V IE = 0 25
IEBO Emitter Cut-Off Current VEB = 7V IC = 0 10
mA
IC = 0.5A VCE = 5V 40
IC = 4A VCE = 5V 20 80
hFE
(1)
Forward-current transfer
ratio
IC = 4A VCE = 2V 12 100
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 4A IB = 0.4A 1.2
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 4A IB = 0.4A 2
VBE(on)
(1)
Base-Emitter On Voltage IC = 4A VCE = 2V 1.8
V
DYNAMIC CHARACTERISTICS
IC = 0.5A VCE = 10V
|hfe| Small signal forward-current
transfer ratio f = 10MHz
2 2.2
VCB = 10V IE = 0
Cobo Output Capacitance f = 1.0MHz 47 175 pF
IC = 4A VCC = 30V
ton Turn-On Time IB1 = 0.4A 0.16 0.44
IC = 4A VCC = 30V
toff Turn-Off Time IB1 = - IB2 = 0.4A 0.6 1.22
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3879
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5337
Issue 3
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
24.13 (0.95)
24.63 (0.97)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
12
TO66 (TO
-
213AA)
Pin 1 - Base Pin 2 - Emitter Case - Collector
