SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 * High Power * Hermetic TO-66 Metal Package * Ideally suited for High Current, High Speed Switching Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 120V 75V 7V 7A 5A 30W 0.17W/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Max. Units 5.83 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5337 Issue 3 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 20mA IB = 0 ICEO Collector Cut-Off Current VCE = 50V IB = 0 5 ICEX Collector Cut-Off Current VCE = 100V VBE = -1.5V 4 ICBO Collector Cut-Off Current VCB = 120V IE = 0 25 IEBO Emitter Cut-Off Current VEB = 7V IC = 0 10 IC = 0.5A VCE = 5V 40 IC = 4A VCE = 5V 20 80 IC = 4A VCE = 2V 12 100 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 4A IB = 0.4A 1.2 IC = 4A IB = 0.4A 2 Base-Emitter On Voltage IC = 4A VCE = 2V 1.8 IC = 0.5A VCE = 10V (1) hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) VBE(on) (1) (1) Min. Typ Max. 75 Units V mA V DYNAMIC CHARACTERISTICS |hfe| Small signal forward-current transfer ratio Cobo Output Capacitance ton Turn-On Time toff Turn-Off Time 2 2.2 f = 10MHz VCB = 10V IE = 0 f = 1.0MHz IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = - IB2 = 0.4A 47 175 0.16 0.44 pF s 0.6 1.22 Notes (1) Pulse Width 380us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5337 Issue 3 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) 3.68 (0.145) rad. max. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO-213AA) Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5337 Issue 3 Page 3 of 3