ee FAIR CHIL. SSMiCONSUCTOR m 1285_TN3019A (WAFER SALES) NPN GENERAL PURPOSE AMPLIFIER Bvceo ....80 V (Min) @ Ic=10 mA beseee 100 (Min) - 300 (Max) @ Ic = 150 mA, VCE=10V ABSOLUTE MAXIMUM RATINGS TEMPERATURES Operating Junction Temperature -55 to +150 Degrees C VOLTAGES & CURRENTS VcEO Collector-Emitter Voltage 80V VcBo Collector-Base Voltage 140 V VeEBO Emitter-Base Voltage 7.0V Ic Collector Current (Continuous) LOA 30.0 mils (762.0 um) EMITTER PAD 6.1 x 4.0 mils BASE PAD 4.3 x 4.1 mils DIE ATTACH AVE NET DIE WAFER DIAMETER WAFER THICKNESS * 30.0 mils" | (762.0 um) Process 12 Aluminum (154.9 x 101.6 um) Aluminum (109.2 x 104.1 um) Gold Eutectic 10,395 4 in (101.6mm) 8+1 mil (203.2+25.4um) ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM PARAMETER MIN MAX | UNITS TEST CONDITIONS Bvceo | Collector-Emitter Breakdown Voltage 80 Vv Ic = 10mA_ IB=0 Bvcso | Collector-Base Breakdown Voltage 140 Vv Ic = 100uA IE=0 Bvezso | Emitter-Base Breakdown Voltage 7.0 Vv le =100uA_ Ic=0 IcBo Collector-Cutoff Current 10 nA VcB= 90V Ie=0 IEBo Emitter-Cutoff Current 10 nA VEB= 5.0 V_ Ic=0 hre DC Current Gain 50 Ic = 100uA VcE= 10V 90 Ic = 10mA VcE= 10V 100 300 Ic = 150mA VcE= 10V 50 Ic = 500mA VcE= 10V 15 Ic = 10A VcE= 10V VcK(SAT) | Collector-Emitter Saturation Voltage 200 mV Ic =150mA_ IB= 15mA 500 mV Ic = 500mA_ IsB= 50mA VsESAT) | Base-Emitter Saturation Voltage 1.1 Vv Ic =150mA Ie= 15mA (1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. (2) Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. 2000 FAIRCHILD PRI2-